FGH60N60UFD tm 600V, 60A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduc tion and switching losses are essential. • Low saturation voltage: VCE(sat) = 1.9V @ IC = 60A • High input impedance • Fast switching • RoHS compliant Applications • Induction Heating, UPS, SMPS, PFC E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) PD Collector Current @ TC = 25oC Collector Current o @ TC = 100 C TL V 120 A A @ TC = 25 C @ TC = 25oC 298 W Maximum Power Dissipation Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds ± 20 A o Storage Temperature Range V 60 Maximum Power Dissipation Tstg Units 600 180 o Pulsed Collector Current @ TC = 100 C 119 Operating Junction Temperature TJ Ratings W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive test , Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.33 o C/W RθJC(Diode) Thermal Resistance, Junction to Case - 1.1 o C/W 40 oC/W RθJA Thermal Resistance, Junction to Ambient ©2008 Fairchild Semiconductor Corporation FGH60N60UFD Rev. A - 1 www.fairchildsemi.com FGH60N60UFD 600V, 60A Field Stop IGBT August 2008 Device Marking Device Package Packaging Type FGH60N60UFD FGH60N60UFDTU TO-247 Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA - 0.67 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE 4.0 5.0 6.5 V IC = 60A, VGE = 15V - 1.9 2.4 V IC = 60A, VGE = 15V, TC = 125oC - 2.1 - V - 2855 - pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 325 - pF - 110 - pF Switching Characteristics td(on) Turn-On Delay Time - 23 - ns tr Rise Time - 58 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets td(on) tr Rise Time - 61 - ns td(off) Turn-Off Delay Time - 141 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 1.23 - mJ Ets Total Switching Loss - 3.15 - mJ - 130 - ns - 40 80 ns - 1.81 - mJ - 0.81 - mJ Total Switching Loss - 2.62 - mJ Turn-On Delay Time - 22 - ns Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGH60N60UFD Rev. A VCC = 400V, IC = 60A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 60A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 125oC VCE = 400V, IC = 60A, VGE = 15V 2 - 63 - ns - 1.92 - mJ - 188 - nC - 21 - nC - 97 - nC www.fairchildsemi.com FGH60N60UFD 600V, 60A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 30A IES = 30A, dIES/dt = 200A/µs Qrr Diode Reverse Recovery Charge FGH60N60UFD Rev. A Min. Typ. Max TC = 25oC - 2.0 2.6 TC = 125oC - 1.8 - TC = 25oC - 47 - - 179 - TC = 25oC - 83 - o - 567 - TC = 125oC TC = 125 C 3 Units V ns nC www.fairchildsemi.com FGH60N60UFD 600V, 60A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 180 180 o o TC = 125 C TC = 25 C 20V 150 15V 150 120 Collector Current, IC [A] Collector Current, IC [A] 12V 10V 90 60 VGE = 8V 30 12V 90 60 VGE = 8V 30 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 0 8 Figure 3. Typical Saturation Voltage Characteristics 2 4 6 Collector-Emitter Voltage, VCE [V] 8 Figure 4. Transfer Characteristics 180 180 Common Emitter VGE = 15V 150 o TC = 25 C o TC = 125 C 120 Common Emitter VCE = 20V 150 Collector Current, IC [A] Collector Current, IC [A] 10V 120 0 90 60 o TC = 25 C o TC = 125 C 120 90 60 30 30 0 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter 3.0 120A 2.5 2.0 60A 1.5 IC = 30A 1.0 25 5 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] 3.5 1 2 3 4 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 4.0 Collector-Emitter Voltage, VCE [V] 15V 20V 16 12 8 120A 4 60A IC = 30A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGH60N60UFD Rev. A o TC = -40 C 4 0 3 6 9 12 15 Gate-Emitter Voltage, VGE [V] 18 www.fairchildsemi.com FGH60N60UFD 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE 20 20 Common Emitter o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Common Emitter 16 12 8 60A 120A 4 IC = 30A 0 0 3 6 9 12 15 Gate-Emitter Voltage, VGE [V] o TC = 125 C 16 12 8 120A 4 IC = 30A 0 18 Figure 9. Capacitance Characteristics 60A 0 18 15 Common Emitter VGE = 0V, f = 1MHz Common Emitter Gate-Emitter Voltage, VGE [V] o o TC = 25 C Capacitance [pF] 6 9 12 15 Gate-Emitter Voltage, VGE [V] Figure 10. Gate charge Characteristics 6000 Cies 4000 Coes 2000 Cres 0 1 TC = 25 C 12 300V VCC = 100V 200V 9 6 3 0 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 50 100 150 Gate Charge, Qg [nC] 200 Figure 12. Turn off Switching SOA Characteristics 300 500 10µs 100 100 100µs 10 Collector Current, IC [A] Collector Current, Ic [A] 3 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 10 Safe Operating Area o VGE = 15V, TC = 125 C 1 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] FGH60N60UFD Rev. A 1 1000 10 100 1000 Collector-Emitter Voltage, VCE [V] 5 www.fairchildsemi.com FGH60N60UFD 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance Figure 14. Turn-off Characteristics vs. Gate Resistance 300 6000 Common Emitter VCC = 400V, VGE = 15V IC = 60A Switching Time [ns] Switching Time [ns] o 100 tr Common Emitter VCC = 400V, VGE = 15V IC = 60A td(on) TC = 25 C 1000 o TC = 125 C td(off) 100 tf o TC = 25 C o TC = 125 C 10 0 10 20 30 40 Gate Resistance, RG [Ω] 10 50 0 20 30 40 50 Gate Resistance, RG [Ω] Figure 15. Turn-on Characteristics vs Collector Current Figure 16. Turn-off Characteristics vs. Collector Current 500 1000 Common Emitter VGE = 15V, RG = 5Ω Common Emitter VGE = 15V, RG = 5Ω o o TC = 25 C TC = 25 C o o tr TC = 125 C Switching Time [ns] Switching Time [ns] 10 100 TC = 125 C td(off) 100 td(on) tf 10 30 0 20 40 60 80 100 120 0 20 40 Collector Current, IC [A] 60 80 100 120 Collector Current, IC [A] Figure 17. Switching Loss vs. Gate Resistance Figure 18. Switching Loss vs. Collector Current 20 20 Common Emitter VCC = 400V, VGE = 15V 10 o IC = 60A TC = 25 C o o Switching Loss [mJ] TC = 25 C Switching Loss [mJ] Common Emitter VGE = 15V, RG = 5Ω 10 o TC = 125 C Eon 1 Eon TC = 125 C Eoff 1 Eoff 0.1 0 10 FGH60N60UFD Rev. A 20 30 40 Gate Resistance, RG [Ω] 0 50 20 40 60 80 100 120 Collector Current, IC [A] 6 www.fairchildsemi.com FGH60N60UFD 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current 200 500 100 100 o Reverse Current , IR [µA] Forward Current, IF [A] TC = 125 C o TJ = 125 C o TJ = 25 C 10 o TJ = 75 C o TC = 25 C 10 o TC = 75 C 1 0.1 o TC = 25 C o TC = 125 C 0.01 1 0 1 2 3 Forward Voltage, VF [V] 0 4 Figure 21. Stored Charge 600 Figure 22. Reverse Recovery Time 60 100 Reverse Recovery Time, trr [ns] 500 o TC = 125 C Reverse Current , IR [µA] 200 400 Reverse Voltage, VR [V] 10 o TC = 75 C 1 0.1 o TC = 25 C 200A/µs 50 di/dt = 100A/µs 40 30 0.01 0 200 400 Reverse Voltage, VR [V] 5 600 20 40 60 Forward Current, IF [A] Figure 23. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.01 0.05 0.02 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGH60N60UFD Rev. A 7 www.fairchildsemi.com FGH60N60UFD 600V, 60A Field Stop IGBT Typical Performance Characteristics FGH60N60UFD 600V, 60A Field Stop IGBT Mechanical Dimensions TO-247AB (FKS PKG CODE 001) FGH60N60UFD Rev. A 8 www.fairchildsemi.com FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ tm * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 FGH60N60UFD Rev. A 9 www.fairchildsemi.com FGH60N60UFD 600V, 60A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks.