AO8820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary The AO8820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. VDS 20V 7A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 21mΩ RDS(ON) (at VGS=4.5V) < 24mΩ RDS(ON) (at VGS=3.6V) < 28mΩ RDS(ON) (at VGS=2.5V) < 32mΩ RDS(ON) (at VGS=1.8V) < 50mΩ ESD protected! Top View Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G2 G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 7: April. 2012 Steady-State Steady-State V A 1.5 W 0.96 TJ, TSTG Symbol t ≤ 10s ±12 30 PD Junction and Storage Temperature Range Units V 5.5 IDM TA=70°C Maximum 20 7 ID TA=70°C Pulsed Drain Current C Power Dissipation B S2 S1 Pin 1 Continuous Drain Current D2 D1 TSSOP8 Bottom View RθJA RθJL www.aosmd.com -55 to 150 Typ 64 89 53 °C Max 83 120 70 Units °C/W °C/W °C/W Page 1 of 5 AO8820 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±10V VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=7A 13 TJ=125°C 10 µA 0.8 1.1 V 17.2 21 24 29 A VGS=4.5V, ID=6.6A 15 19.4 24 VGS=3.6V, ID=6A 16 20.7 28 VGS=2.5V, ID=5.5A 18 VGS=1.8V, ID=2A 25 32 35 50 gFS Forward Transconductance VDS=5V, ID=7A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=10V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA 5 Gate Threshold Voltage mΩ S 1 V 2.5 A 500 pF 100 pF 52 pF 6 VGS=4.5V, VDS=10V, ID=7A Units V 1 VGS(th) Static Drain-Source On-Resistance Max 20 VDS=16V, VGS=0V IGSS RDS(ON) Typ 9 nC 2 nC Qgd Gate Drain Charge 1 nC tD(on) Turn-On DelayTime 0.2 us tr Turn-On Rise Time 1.5 us tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=5V, VDS=10V, RL=1.4Ω, RGEN=3Ω 7.4 us 18 us IF=7A, dI/dt=100A/µs 9 Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs 10 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 7: April. 2012 www.aosmd.com Page 2 of 5 AO8820 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V VDS=5V 3V 25 15 4V 2V ID(A) ID (A) 20 15 10 10 125°C 5 5 25°C VGS=1.5V 0 0 0 1 2 3 4 0 5 50 1 1.5 2 2.5 40 VGS=2.5V VGS=3.6V 30 20 10 VGS=4.5V VGS=10V Normalized On-Resistance 1.8 VGS=1.8V RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=2.5V ID=5.5A 1.6 VGS=4.5V ID=6.6A 1.4 17 5 VGS=10V ID=7A 2 10 1.2 VGS=1.8V ID=2A 1 0.8 0 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 80 1.0E+01 ID=7A 70 1.0E+00 40 1.0E-01 50 IS (A) RDS(ON) (mΩ Ω) 60 125°C 1.0E-02 40 125°C 1.0E-03 25°C 30 20 1.0E-04 25°C 1.0E-05 10 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 7: April. 2012 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO8820 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 800 VDS=10V ID=7A 4 Ciss Capacitance (pF) VGS (Volts) 600 3 2 400 Coss 200 1 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 20 RDS(ON) limited 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 TA=25°C 10µs 100µs 1000 Power (W) 10.0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 10000 100.0 ID (Amps) Crss 0 100 10s DC 10 1 0.0 0.00001 0.01 0.1 1 VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=83°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 7: April. 2012 www.aosmd.com Page 4 of 5 AO8820 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 7: April. 2012 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5