AOSMD AO8820 20v common-drain dual n-channel mosfet Datasheet

AO8820
20V Common-Drain Dual N-Channel MOSFET
General Description
Product Summary
The AO8820 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V VGS(MAX)
rating. It is ESD protected. This device is suitable for use
as a uni-directional or bi-directional load switch, facilitated
by its common-drain configuration.
VDS
20V
7A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 21mΩ
RDS(ON) (at VGS=4.5V)
< 24mΩ
RDS(ON) (at VGS=3.6V)
< 28mΩ
RDS(ON) (at VGS=2.5V)
< 32mΩ
RDS(ON) (at VGS=1.8V)
< 50mΩ
ESD protected!
Top View
Top View
D1/D2
S1
S1
G1
1
2
3
4
8
7
6
5
D1/D2
S2
S2
G2
G2
G1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 7: April. 2012
Steady-State
Steady-State
V
A
1.5
W
0.96
TJ, TSTG
Symbol
t ≤ 10s
±12
30
PD
Junction and Storage Temperature Range
Units
V
5.5
IDM
TA=70°C
Maximum
20
7
ID
TA=70°C
Pulsed Drain Current C
Power Dissipation B
S2
S1
Pin 1
Continuous Drain
Current
D2
D1
TSSOP8
Bottom View
RθJA
RθJL
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-55 to 150
Typ
64
89
53
°C
Max
83
120
70
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO8820
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±10V
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
VGS=10V, ID=7A
13
TJ=125°C
10
µA
0.8
1.1
V
17.2
21
24
29
A
VGS=4.5V, ID=6.6A
15
19.4
24
VGS=3.6V, ID=6A
16
20.7
28
VGS=2.5V, ID=5.5A
18
VGS=1.8V, ID=2A
25
32
35
50
gFS
Forward Transconductance
VDS=5V, ID=7A
25
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.65
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS=0V, VDS=10V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
µA
5
Gate Threshold Voltage
mΩ
S
1
V
2.5
A
500
pF
100
pF
52
pF
6
VGS=4.5V, VDS=10V, ID=7A
Units
V
1
VGS(th)
Static Drain-Source On-Resistance
Max
20
VDS=16V, VGS=0V
IGSS
RDS(ON)
Typ
9
nC
2
nC
Qgd
Gate Drain Charge
1
nC
tD(on)
Turn-On DelayTime
0.2
us
tr
Turn-On Rise Time
1.5
us
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=5V, VDS=10V, RL=1.4Ω,
RGEN=3Ω
7.4
us
18
us
IF=7A, dI/dt=100A/µs
9
Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs
10
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 7: April. 2012
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Page 2 of 5
AO8820
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10V
VDS=5V
3V
25
15
4V
2V
ID(A)
ID (A)
20
15
10
10
125°C
5
5
25°C
VGS=1.5V
0
0
0
1
2
3
4
0
5
50
1
1.5
2
2.5
40
VGS=2.5V
VGS=3.6V
30
20
10
VGS=4.5V
VGS=10V
Normalized On-Resistance
1.8
VGS=1.8V
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=2.5V
ID=5.5A
1.6
VGS=4.5V
ID=6.6A
1.4
17
5
VGS=10V
ID=7A 2
10
1.2
VGS=1.8V
ID=2A
1
0.8
0
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
80
1.0E+01
ID=7A
70
1.0E+00
40
1.0E-01
50
IS (A)
RDS(ON) (mΩ
Ω)
60
125°C
1.0E-02
40
125°C
1.0E-03
25°C
30
20
1.0E-04
25°C
1.0E-05
10
0
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 7: April. 2012
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO8820
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
800
VDS=10V
ID=7A
4
Ciss
Capacitance (pF)
VGS (Volts)
600
3
2
400
Coss
200
1
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
20
RDS(ON)
limited
1ms
1.0
10ms
TJ(Max)=150°C
TA=25°C
0.1
TA=25°C
10µs
100µs
1000
Power (W)
10.0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
10000
100.0
ID (Amps)
Crss
0
100
10s
DC
10
1
0.0
0.00001
0.01
0.1
1
VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=83°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 7: April. 2012
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Page 4 of 5
AO8820
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 7: April. 2012
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5
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