LRC L2SC2411KRLT1G Medium power transistor npn silicon Datasheet

LESHAN RADIO COMPANY, LTD.
Medium Power Transistor
NPN silicon
L2SC2411KQLT1G
Series
FEATURE
ƽEpitaxial planar type
3
ƽComplementary to L2SA1036K
ƽ We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
1
DEVICE MARKING AND ORDERING INFORMATION
Device
2
Marking
Shipping
L2SC2411KQLT1G
CQ
3000/Tape&Reel
L2SC2411KQLT3G
CQ
10000/Tape&Reel
L2SC2411KRLT1G
CR
3000/Tape&Reel
L2SC2411KRLT3G
CR
10000/Tape&Reel
SOT– 23 (TO–236AB)
3
COLLECTOR
MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
40
32
5
0.5
0.2
150
-55~+150
1
BASE
Unit
V
V
V
A*
W
°C
°C
2
EMITTER
*PC must not be exceeded.
ELECTRICAL CHARACTERISTICS(TA = 25°C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltgae
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collcetor-emitter saturation voltage
Transition frequency
Output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
40
32
5
120
-
Typ
250
6.0
Max.
1
1
390
0.4
-
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=100µA
IC=1mA
IE=100µA
VCB=20V
VEB=4V
VCE=3V ,I C =100mA
IC/IB=500mA/50mA
VCE=5V,IE=-20mA,f=100MHz
VCB=10V,IE=0A,f=1MHz
hFE values are classified as follows:
Item
hFE
Q
R
120~270 180~390
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
°
L2SC2411KQLT1G Series
Electrical characteristic curves(TA = 25 C)
1000
100
VCE =6V
500
100
COLLECTOR CURRENT : I (mA)
C
Ta=100OC
50
25OC
80OC
25OC
20
10
0.45m
A
0.50m
55 OC
5
2
1
0.5
0.40mA
0.35mA
0.30mA
0.25mA
50
0.20mA
0.15mA
0.10mA
0.05mA
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1.1
1
Grounded emitter propagation characteristics
500
Ta = 25OC
2mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
C
400
300
0.8mA
200
0.6mA
0.4mA
100
0.2mA
0
1
2
3
4
I B= 0A
5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.3
Fig.2
Grounded emitter output characteristics(II)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig.1
2
3
5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
BASE TO EMITTER VOLTAGE : VBE(V)
0
I B = 0A
4
0
0.1
0.2
COLLECTOR CURRENT : I (mA)
A
C
COLLECTOR CURRENT : I (mA)
200
Ta = 25OC
1
Grounded emitter output characteristics(I)
Ta = 25OC
l C /l B = 10
0.5
0.2
0.1
0.05
0.02
0.5
1
2
5
10
20
50
100
200
500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.4 Collector-emitter saturation voltage vs. collector current
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
L2SC2411KQLT1G Series
Electrical characteristic curves(TA = 25°C)
500
TRANSITION FREQUENCY : f (MHz)
V CE = 3V
O
200
100
C
Ta = 100O
75 C
O
50 C
O
25 C
O
0 C
O
25 C
OC
50
50
20
0.5
1
2
5
10
20
50 100 200
200
100
50
500 1000
0.5
1
2
COLLECTOR CURRENT : IC(mA)
5
10
20
EMITTER CURRENT : I (mA)
E
Fig.6 Gain bandwidth product vs. emitter current
Fig.5 DC current gain vs. collector current
O
: Cib(pF)
0.2
Ta = 25 C
f = 1MHz
I E =0A
I C = 0A
50
Cib
EMITTER INPUT CAPACITANCE
10
0.1
O
Ta = 25 C
V CE = 5V
T
500
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
DC CURRENT GAIN : h FE
1000
20
Cob
10
5
2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCE(V)
EMITTER TO BASE VOLTAGE: VEB(V)
Fig.7
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Rev.O 3/4
50
LESHAN RADIO COMPANY, LTD.
L2SC2411KQLT1G Series
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 4/4
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