JIEJIE JCT1225C 25a scr Datasheet

JIEJIE MICROELECTRONICS CO. , Ltd
JCT1025/1225 Series
25A SCRs
Rev.2.0
DESCRIPTION:
JCT1025/1225 series of silicon controlled rectifiers,
with high ability to withstand the shock loading of
large current, provide high dv/dt rate with strong
resistance to electromagnetic interference. They
are especially recommended for use on solid state
relay, motorcycle, power charger, T-tools etc.
12
12
Value
Unit
IT(RMS)
25
A
IGT
≤40
mA
VTM
1.6
V
3
TO-220A
MAIN FEATURES
Symbol
12
3
TO-220B
12
3
3
TO-220C
TO-220F
K(1)
A(2)
G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Tstg
-40-150
℃
Tj
-40-125
℃
Repetitive peak off-state voltage(Tj=25℃)
VDRM
1000/1200
V
Repetitive peak reverse voltage(Tj=25℃)
VRRM
1000/1200
V
Non repetitive surge peak Off-state voltage
VDSM
VDRM +100
V
Non repetitive peak reverse voltage
VRSM
VRRM +100
V
IT(RMS)
25
A
ITSM
300
A
I2t
450
A2s
dI/dt
50
A/μs
IGM
4
A
Storage junction temperature range
Operating junction temperature range
TO-220A/ TO-220F
(TC=85℃)
RMS on-state current
TO-220B/ TO-220C
(TC=100℃)
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(IG=2×IGT)
Peak gate current
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JCT1025/1225 Series
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Average gate power dissipation
Peak gate power
PG(AV)
1
W
PGM
5
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
IGT
VGT
VGD
Test Condition
Unit
VD=12V RL=33Ω
VD=VDRM Tj=125℃ RL=3.3KΩ
MIN.
TYP.
MAX.
-
-
40
mA
-
-
1.3
V
0.2
-
-
V
IL
IG=1.2IGT
-
-
90
mA
IH
IT=500mA
-
-
50
mA
1000
-
-
V/μs
Value(MAX)
Unit
Tj=25℃
1.6
V
Tj=25℃
10
μA
Tj=125℃
4
mA
Value
Unit
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
STATIC CHARACTERISTICS
Symbol
VTM
IDRM
IRRM
Parameter
ITM=50A tp=380μs
VD=VDRM VR=VRRM
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
TO-220A/ TO-220F
1.9
TO-220B/ TO-220C
1.0
junction to case(AC)
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JCT1025/1225 Series
JieJie Microelectronics CO. , Ltd
ORDERING INFORMATION
J
CT
12
25
B
A:TO-220A B:TO-220B
C:TO-220C F:TO-220F
JieJie Microelectronics Co.,Ltd
SCRs
IT(RMS):25A
10:VDRM /VRRM ≥1000V
12:VDRM /VRRM ≥1200V
PACKAGE MECHANICAL DATA
Dimensions
Ref.
m
8m
E
M
A
a
C2
H
D
V1
L3
F
Φ
.
x3
C3
L1
Millimeters
Min.
L2
TO-220A
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Typ.
Max.
4.60
0.173
0.181
B
0.61
0.88
0.024
0.035
C
0.46
0.70
0.018
0.028
C2
1.21
1.32
0.048
0.052
C3
2.40
2.72
0.094
0.107
D
8.60
9.70
0.339
0.382
E
9.80
10.4
0.386
0.409
F
6.55
6.95
0.258
0.274
29.8
1.102
2.54
28.0
L2
1.14
L3
2.65
V1
- 3 / 6-
0.1
3.75
L1
C
Min.
4.40
H
G
Inches
Max.
A
G
B
Typ.
45°
1.173
0.148
1.70
0.045
2.95
0.104
0.067
0.116
45°
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JCT1025/1225 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
mm
E
A
C2
H
D
V1
L3
F
Φ
Ma
.8
x3
Millimeters
Min.
JIE
L1
C3
L2
Max.
0.173
0.181
B
0.61
0.88
0.024
0.035
C
0.46
0.70
0.018
0.028
C2
1.21
1.32
0.048
0.052
C3
2.40
2.72
0.094
0.107
D
8.60
9.70
0.339
0.382
E
9.60
10.4
0.378
0.409
F
6.20
6.60
0.244
0.260
2.54
28.0
0.1
29.8
1.102
3.75
1.173
0.148
L2
1.14
1.70
0.045
0.067
L3
2.65
2.95
0.104
0.116
45°
V1
TO-220B
Typ.
4.60
H
C
Min.
4.40
L1
B
Inches
Max.
A
G
G
Typ.
45°
Dimensions
E
Millimeters
Min.
A
C2
H
D
L3
F
Φ
Ref.
m
.6m
3
x
Ma
L1
C3
L2
C
TO-220C
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Max.
Min.
Typ.
Max.
4.40
4.60
0.173
0.181
B
0.70
0.90
0.028
0.035
C
0.45
0.60
0.018
0.024
C2
1.23
1.32
0.048
0.052
C3
2.20
2.60
0.087
0.102
D
8.90
9.90
0.350
0.390
E
9.90
10.3
0.390
0.406
F
6.30
6.90
0.248
0.272
29.8
1.102
H
B
Inches
A
2.54
G
G
Typ.
28.0
0.1
3.39
L1
1.173
0.133
L2
1.14
1.70
0.045
0.067
L3
2.65
2.95
0.104
0.116
Φ
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3.6
0.142
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JCT1025/1225 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
ax
E
Millimeters
Min.
A
M
C2
F
L3
Φ
3.
m
5m
H
D
V1
L1
C3
L2
0.029
0.75
0.019
Max.
0.74
C
0.48
C2
2.40
2.70
0.094
0.106
C3
2.60
3.00
0.102
0.118
D
8.80
9.30
0.346
0.366
E
9.70
10.3
0.382
0.406
F
6.40
7.00
0.252
0.276
0.80
2.54
28.0
0.031
0.030
1.102
1.173
0.045
0.067
L3
3.30
0.130
V1
45°
45°
FIG.1 Maximum power dissipation versus RMS
on-state current
0.033
0.143
1.70
1.14
0.189
0.1
29.8
3.63
L2
TO-220F
0.83
Typ.
A
H
C
Min.
0.173
B
L1
G
Max.
4.80
4.40
G
B
Typ.
Inches
FIG.2: RMS on-state current versus case
temperature
P(w)
36
IT(RMS) (A)
30
30
25
24
20
18
15
12
10
6
5
α=180°
TO-220B/
TO-220C
TO-220A/
TO-220F
0
0
IT(RMS) (A)
10
15
5
20
Tc (℃)
0
0
25
FIG.3: Surge peak on-state current versus
number of cycles
25
50
75
100
125
FIG.4: On-state characteristics (maximum
values)
ITM (A)
ITSM (A)
300
350
tp=10ms
One cycle
300
100
250
200
150
10
100
Tj=125℃
Tj=25℃
50
0
1
10
Number of cycles
100
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1
0
1
2
VTM (V)
3
4
5
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JCT1025/1225 Series
JieJie Microelectronics CO. , Ltd
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponging value of I t (dI/dt < 50A/μs)
2
2
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
2
ITSM (A), I t (A s)
3000
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
3.0
ITSM
1000
2.5
2.0
IGT
I2 t
1.5
dI/dt
100
IH&IL
1.0
0.5
10
0.01
tp(ms)
0.1
1
10
0.0
-40
Tj(℃)
-20
0
20
40
60
80 100
120
140
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the second version which is made in 20-Nov.-2014. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright ©2014 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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