Data Sheet No. PD60237_B IPS1031(S)(R) INTELLIGENT POWER LOW SIDE SWITCH Features • • • • • • • Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI Diagnostic on the input current Rds(on) 50mΩ (max.) Vclamp 36V Ishutdown 18A (typ.) Packages Description The IPS1031(S)(R) is a three terminal Intelligent Power Switch (IPS) that features a low side MOSFET with overcurrent, over-temperature, ESD protection and drain to source active clamp. This device offers protections and the high reliability required in harsh environments. The switch provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165°C or when the drain current reaches 18A. The device restarts once the input is cycled. A serial resistance connected to the input provides the diagnostic. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. TO-220 IPS1031 D²Pak IPS1031S D-Pak IPS1031R Typical Connection +Bat Load 1 Input R Input Signal V Diag www.irf.com D 2 S 3 Control IN 1 IPS1031(S)(R) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Ground lead. (Tambient=25°C unless otherwise specified). Symbol Parameter Min. Max. Units Vds Vds cont. Vin Isd cont. Maximum drain to source voltage Maximum continuous drain to source voltage Maximum input voltage Max. diode continuous current (limited by thermal dissipation) Maximum power dissipation (internally limited by thermal protection) Rth=5°C/W IPS1031 Rth=40°C/W IPS1031S 1” sqr. footprint Rth=50C/W IPS1031R 1” sqr. footprint Electrostatic discharge voltage (Human body) C=100pF, R=1500Ω Between drain and source Other combinations Electrostatic discharge voltage (Machine Model) C=200pF,R=0Ω Between drain and source Other combinations Max. storage & operating temperature junction temperature Lead soldering temperature (10 seconds) -0.3 -0.3 ⎯ 36 28 6 4 V V V A ⎯ ⎯ ⎯ 25 3.1 2.5 W ⎯ ⎯ 4 3 ⎯ ⎯ ⎯ 0.5 0.3 150 300 °C °C Typ. Max. Units 50 3.9 60 40 3.9 70 50 3.9 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ °C/W Pd ESD Tj max. Tsoldering -40 kV Thermal Characteristics Symbol Parameter Rth1 Rth2 Rth1 Rth2 Rth3 Rth1 Rth2 Rth3 Thermal resistance junction to ambient IPS1031 TO-220 free air Thermal resistance junction to case IPS1031 TO-220 Thermal resistance junction to ambient IPS1031S D²Pak std. footprint Thermal resistance junction to ambient IPS1031S D²Pak 1” sqr. footprint Thermal resistance junction to case IPS1031S D²Pak Thermal resistance junction to ambient IPS1031R D-Pak std. footprint Thermal resistance junction to ambient IPS1031R D-Pak 1” sqr. footprint Thermal resistance junction to case IPS1031R D-Pak Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter VIH VIL High level input voltage Low level input voltage Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V Rth=5°C/W IPS1031 Rth=40°C/W IPS1031S 1” sqr. footprint Rth=50C/W IPS1031R 1” sqr. footprint Recommended resistor in series with IN pin to generate a diagnostic Max recommended load inductance (including line inductance) (1) Max. frequency (switching losses = conduction losses) Max. input rising time Ids Rin Max L Max F Max. t rise Min. Max. 4.5 0 5.5 0.5 ⎯ ⎯ ⎯ 9.5 3.3 3 10 50 1.5 1 0.5 ⎯ ⎯ ⎯ Units A kΩ µH kHz µs (1) Higher inductance is possible if maximum load current is limited - see figure 11 www.irf.com 2 IPS1031(S)(R) Static Electrical Characteristics Tj=25°C, Vcc=14V (unless otherwise specified) Symbol Parameter Rds(on) ON state resistance Tj=25°C ON state resistance Tj=150°C (2) Drain to source leakage current Drain to source leakage current Drain to source clamp voltage 1 Drain to source clamp voltage 2 IN to source pin clamp voltage Input threshold voltage Idss1 Idss2 V clamp1 V clamp2 Vin clamp Vth Min. Typ. Max. ⎯ ⎯ ⎯ ⎯ 50 95 10 20 ⎯ 40 76 0.1 0.2 39 40 6.5 1.7 Min. Typ. Max. Units 3 6 20 6 10 20 70 15 0.7 30 40 200 30 µs ⎯ mJ Typ. Max. 36 ⎯ 5.5 Units mΩ µA ⎯ 42 7.5 V ⎯ Test Conditions Vin=5V, Ids=8A Vcc=14V, Tj=25°C Vcc=28V, Tj=25°C Id=20mA Id=1A Iin=1mA Id=10mA Switching Electrical Characteristics Vcc=14V, Resistive load=1.5Ω, Rinput=0Ω, Vin=5V, Tj=25°C Symbol Parameter Tdon Tr Tdoff Tf Eon + Eoff Turn-on delay time to 20% Rise time 20% to 80% Turn-off delay time to 80% Fall time 80% to 20% Turn on and off energy ⎯ Test Conditions See figure 2 Protection Characteristics Symbol Tsd Isd OV Vreset Treset Parameter Over temperature threshold Over current threshold Over voltage protection (not active when the device is ON ) IN protection reset threshold Time to reset protection Min. ⎯ Units °C A V 150(2) 12 34 165 18 37 ⎯ 15(2) 1.7 50 200 V µs Min. Typ. Max. Units 15 150 32 230 70 350 24 ⎯ ⎯ Test Conditions See figure 1 See figure 1 Vin=0V Diagnostic Symbol Parameter Iin, on Iin, off ON state IN positive current OFF state IN positive current ( after protection latched ) µA Test Conditions Vin=5V Vin=5V (2) Guaranteed by design www.irf.com 3 IPS1031(S)(R) Lead Assignments 2 - Drain 2 - Drain 1- In 2- D 3- S 1 2 3 D²Pak – D Pak 1 2 3 TO220 Functional Block Diagram All values are typical DRAIN 37V IN 75Ω 43V 15kΩ Q Tj > 165°C 2kΩ 6.5V 150kΩ Vds > O.V. S R I > Isd SOURCE www.irf.com 4 IPS1031(S)(R) All curves are typical values. Operating in the shaded area is not recommended. Vin Ids t<T reset 80% t>T reset Ishutdown Vin Isd 20% Tr-in 80% Ids Tj Tsd 165°C 20% Tshutdown Td on Td off Tf Tr Vdiag Vds normal fault Figure 1 – Timing diagram Figure 2 – IN rise time & switching definitions T clamp Vin L Rem : During active clamp, Vload is negative V load R Ids D Vds clamp IN 5V Vds + 14V - Vin 0V Vcc Vds S Ids See Application Notes to evaluate power dissipation Figure 3 – Active clamp waveforms www.irf.com Figure 4 – Active clamp test circuit 5 IPS1031(S)(R) 200% 150% 100% 50% 0% 0 1 2 3 4 5 6 Rds(on), Drain-to-Source On Resistance (Normalized) Rds(on), Drain-to-Source On Resistance (normalized) 200% 150% 100% 50% -50 0 50 100 150 Tj, junction temperature (°C) Vin, input voltage (V) Figure 5 – Normalized Rds(on) (%) Vs Input voltage (V) Figure 6 - Normalized Rds(on) (%) Vs Tj (°C) 140% 25 Isd, normalized I shutdown (%) 120% Ids, output current 20 15 10 I limit 5 I shutdown 100% 80% 60% 40% 20% 0% 0 0 1 2 3 4 5 Vin, input voltage (V) Figure 7 – Current limitation and current shutdown Vs Input voltage (V) www.irf.com 6 -50 0 50 100 150 Tj, junction temperature (°C) Figure 8 – Normalized I shutdown (%) Vs junction temperature (°C) 6 IPS1031(S)(R) 30 40 5°C/W 10°C/W 1" sq footprint std footprint 50°C/W 25°C ambient 50°C/W 85°C ambient 30 Ids, output current (A) Ids, cont. Output current (A) 25 20 15 10 5 0 -50 50°C/W -40°C ambient 20 10 0 0 50 100 150 0.1 Tamb, Ambient temperature (°C) 10 100 Protection response time (s) Figure 10 – Ids (A) Vs over temperature protection response time (s) Figure 9 – Max. continuous output current (A) Vs Ambient temperature (°C) 100 100 Zth, transient thermal impedance (°C/W) Ids, output current (A) 1 10 1 0.001 0.01 0.1 Inductive load (mH) Figure 11 – Max. ouput current (A) Vs Inductive load (mH) www.irf.com 1 10 1 0.1 0.01 1E-05 0.0001 0.001 0.01 0.1 Time (s) 1 10 Figure 12 – Transient thermal impedance (°C/W) Vs time (s) 7 100 IPS1031(S)(R) 200 200 150 I on I latch 100 50 0 -50 0 50 100 Tj, junction temperature (°C) Figure 13 – Input current (µA) On and Off Vs junction temperature (°C) www.irf.com 150 Tsd, over temperature shutdown (°C) Ion, Ioff, input durrent (µA) 250 180 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 Vin, input voltage (V) Figure 14 – Over temperature shutdown (°C) Vs input voltage (V) 8 6 IPS1031(S)(R) Case Outline – TO-220 AB www.irf.com 9 IPS1031(S)(R) Case Outline - D²Pak (SMD-220) www.irf.com 10 IPS1031(S)(R) Case Outline – D-Pak www.irf.com 11 IPS1031(S)(R) Tape & Reel - D²Pak (SMD220) www.irf.com 12 IPS1031(S)(R) Tape & Reel - D-Pak IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. This product is designed and qualified for the Automotive [Q100] market. 9/22/2005 www.irf.com 13