BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable • 2 4 Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1) gain |S 21| 2 = 22 dB at 1.8 GHz (Appl.2) 1 IP 3out = +7 dBm at 1.8 GHz (V D=3V, I D=9.4mA) • Noise figure NF = 2.2 dB at 1.8 GHz 3 • Typical device voltage V D = 2 V to 5 V +V • Reverse isolation > 35 dB (Appl.2) • Pb-free (RoHS compliant) package 1) 4 OUT Circuit Diagram IN 1 2 GND EHA07378 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking BGA427 BMs Pin Configuration 1, IN 2, GND 3, +V Package 4, Out SOT343 Maximum Ratings Parameter Symbol Device current Value Unit ID 25 mA Device voltage VD,+V 6 V Total power dissipation Ptot 150 mW -10 dBm Junction temperature PRFin Tj 150 °C Ambient temperature range TA -65 ... 150 Storage temperature range Tstg -65 ... 150 TS = 120 °C RF input power Thermal Resistance Junction - soldering point 2) RthJS ≤ 295 K/W 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-07-12 BGA427 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC characteristics VD = 3 V, Zo = 50Ω, Testfixture Appl.1 Insertion power gain f = 0.1 GHz f = 1 GHz f = 1.8 GHz |S21|2 Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz S12 Intercept point at the output f = 1.8 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz dB - 27 22 18.5 22 - 1.9 2 2.2 IP3out - +7 - dBm RLin - >12 - dB RLout - >9 - NF Typical configuration Appl.1 Appl.2 +V +V 100 pF RF OUT 1 nF 10 nF 100 nH 2.2 pF BGA 427 100 pF 100 pF 100 pF RF IN RF OUT GND EHA07379 BGA 427 100 pF RF IN GND EHA07380 Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device to provide a low impedance path (appl.1). 2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground. 2 2007-07-12 BGA427 S-Parameters at TA = 25 °C, (Testfixture, Appl.1) f S11 GHz MAG S21 ANG VD = 3V, Zo = 50Ω 0.1382 -38.3 0.1 0.1179 -16 0.2 0.1697 -20.8 0.5 0.1824 -56.9 0.8 0.1782 -69.1 0.9 0.176 -80.6 1 0.1827 -133.5 1.5 0.1969 -156.1 1.8 0.2021 -162.8 1.9 0.2116 -167.7 2 0.2437 172.8 2.5 0.258 153.3 3 S12 S22 MAG ANG MAG ANG MAG ANG 24.821 24.606 22.236 18.258 17.152 15.786 10.923 9.029 8.486 8.015 6.259 5.103 164.9 158.9 135.2 115.4 109.4 104 84.9 77 74.7 72.3 63 55 0.0022 0.0046 0.0104 0.0169 0.0194 0.0225 0.0385 0.0479 0.0517 0.0549 0.0709 0.0892 50.7 71.8 83.8 94.8 97.3 98.3 99.7 99.3 98.9 98.8 97.1 96.9 0.6435 0.6278 0.54 0.4453 0.4326 0.4129 0.3852 0.3917 0.3946 0.3991 0.4202 0.4477 174.8 166.9 147.3 140.2 139.4 138.1 139.6 139.3 138.8 138.3 134.6 131 Spice-model BGA 427 +V BGA 427-chip including parasitics 13 R2 T2 R1 IN R3 C’-E’Diode 14 C1 11 C P3 T1 C P1 C P4 C P5 R4 C P2 12 GND EHA07381 3 OUT T1 T2 R1 R2 R3 R4 C1 C P1 C P2 C P3 C P4 T501 T501 14.5kΩ 280Ω 2.4kΩ 170Ω 2.3pF 0.2pF 0.2pF 0.6pF 0.1pF 0.1pF C P5 C'-E'-diode T1 2007-07-12 BGA427 Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : IS = 0.21024 fA BF = 83.23 - NF = 1.0405 - VAF = 39.251 V IKF = 0.16493 A ISE = 15.761 fA NE = 1.7763 - BR = 10.526 - NR = 0.96647 - VAR = 34.368 V IKR = 0.25052 A ISC = 0.037223 fA NC = 1.3152 - RB = 15 Ω IRB = 0.21215 A RBM = 1.3491 Ω RE = 1.9289 RC = 0.12691 Ω CJE = 3.7265 fF VJE = 0.70367 V MJE = 0.37747 - TF = 4.5899 ps XTF = 0.3641 - VTF = 0.19762 V ITF = 1.3364 mA PTF = 0 deg CJC = 96.941 fF VJC = 0.99532 V MJC = 0.48652 - XCJC = 0.08161 - TR = 1.4935 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99469 - TNOM 300 K - RS = 20 Ω L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = C1 = C2 = C3 = L1 = L2 = 0.36 0.4 0.3 0.15 0.36 0.4 95 6 132 28 88 8 0.6 0.4 nH nH nH nH nH nH fF fF fF fF fF fF nH nH C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 2 fA N= 1.02 All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: L2 OUT C1 C3 L1 C CB C2 14 L BO L BI IN 11 BGA 427 Chip 12 C BE 13 L CI L CO +V C’-E’Diode C CE L EI L EO GND EHA07382 Valid up to 3GHz Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 2007-07-12 BGA427 Insertion power gain |S21|2 = f (f) Noise figure NF = f (f) VD, ID = parameter VD,ID = parameter 5.0 35 dB dB 25 VD=5V, ID=17.5mA VD=3V, ID=9.5mA 3.5 NF |S21|2 4.0 20 3.0 2.5 15 2.0 1.5 10 1.0 5 0.5 0 -1 10 10 0 GHz 10 0.0 -1 10 1 f 10 0 GHz 10 f Intercept point at the output IP3out = f (f) VD,ID = parameter 25 IP3out dBm 15 10 5 0 -1 10 10 0 GHz 10 1 f 5 2007-07-12 1 Package SOT343 BGA427 Package Outline 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BGA420 Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 6 2007-07-12 BGA427 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-07-12