TI1 LM48861 Ground-referenced, ultra low noise, stereo headphone amplifier Datasheet

LM48861, LM48861TMBD
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SNAS450B – JUNE 2008 – REVISED MAY 2013
LM48861
Ground-Referenced, Ultra Low Noise, Stereo
Headphone Amplifier
Check for Samples: LM48861, LM48861TMBD
FEATURES
DESCRIPTION
•
The LM48861 is a single supply, ground-referenced
stereo headphone amplifier. Part of TI's PowerWise™
product family, the LM48861 consumes only 3mW of
power, yet still provides great audio performance. The
ground-referenced architecture eliminates the larger
DC blocking capacitors required by traditional
headphone amplifier's saving board space and
reducing cost.
1
23
•
•
•
•
•
•
•
Ground Referenced Outputs – Eliminates
Output Coupling Capacitors
Common-Mode Sensing
Advanced Click-and-Pop Suppression
Low Supply Current
Minimum External Components
Micro-Power Shutdown
ESD Protection of 8kV HBM Contact
Available in Space-Saving 12-Bump DSBGA
Package
APPLICATIONS
•
•
•
Mobile Phones
Portable Electronic Devices
MP3 Players
KEY SPECIFICATIONS
•
•
•
•
•
Output Power/Channel at
VDD = 1.5V,THD+N = 1%
– RL = 16Ω 12mW (typ)
– RL = 32Ω 13mW (typ)
Output Power/Channel at
VDD = 1.8V, THD+N = 1%
– RL = 16Ω 24mW (typ)
– RL = 32Ω 22mW (typ)
Quiescent Power Supply Current at 1.5V
2mA (typ)
PSRR at 217Hz 83dB (typ)
Shutdown Current 0.01μA (typ)
The LM48861 features common-mode sensing that
corrects for any differences between the amplifier
ground and the potential at the headphone return
terminal, minimizing noise created by any ground
mismatches.
The LM48861 delivers 22mW/channel into a 32Ω
load with <1% THD+N with a 1.8V supply. Power
supply requirements allow operation from 1.2V to
2.8V. High power supply rejection ratio (PSRR), 83dB
at 217Hz, allows the device to operate in noisy
environments without additional power supply
conditioning. A low power shutdown mode reduces
supply current consumption to 0.01µA.
Superior click and pop suppression eliminates audible
transients on power-up/down and during shutdown.
The LM48861 is available in an ultra-small 12-bump,
0.4mm pitch, DSBGA package (1.215mm x
1.615mm).
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerWise is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008–2013, Texas Instruments Incorporated
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Typical Application
R3
20 k:
VDD
C3
C4
2.2 PF
0.39 PF
+
C1
20 k:
0.1 PF
ceramic
VDD
INL
-
OUTL
R1
+
VIN1
Headphone
Jack
Shutdown
SHDN Shutdown
Control
Click/Pop
Suppression
CPP
C5
2.2 PF
Charge
Pump
+
CPN
0.39 PF
+
20 k:
C2
R2
INR
CPVSS
OUTR
VSS
PGND
COM
VIN2
C6
2.2 PF
20 k:
R4
Figure 1. Typical Audio Amplifier Application Circuit
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Connection Diagrams
1
2
3
A
CPP
PGND
CPN
B
VDD
SHDN
CPVSS
C
OUTL
VSS
INL
0.4 mm TYP
D
OUTR
COM
INR
0.4 mm TYP
Figure 2. YFQ Package
1.215mm x 1.615mm x 0.6mm
Top View
See Package Number YFQ0012AAA
BUMP DESCRIPTION
Bump
Name
A1
CPP
Description
A2
PGND
A3
CPN
Charge Pump Flying Capacitor Negative Terminal
B1
VDD
Positive Power Supply
B2
SHDN
Active Low Shutdown
Charge Pump Flying Capacitor Positive Terminal
Power Ground
B3
CPVSS
Charge Pump Output
C1
OUTL
Left Channel Output
C2
VSS
Negative Power Supply
C3
INL
Left Channel Input
D1
OUTR
Right Channel Output
D2
COM
Ground reference for inputs and HP
D3
INR
Right Channel Input
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Absolute Maximum Ratings (1) (2) (3)
Supply Voltage (1)
3V
−65°C to +150°C
Storage Temperature
Input Voltage
-0.3V to VDD + 0.3V
Power Dissipation (4)
ESD Ratings (HBM)
Internally Limited
(5)
2000V
ESD Ratings(OUTL, OUTR) (5)
8000V
ESD Susceptibility (Machine Model) (6)
200V
Junction Temperature
Thermal Resistance
(1)
(2)
(3)
(4)
(5)
(6)
150°C
θJA (YFQ)
70°C/W (typ)
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum
RatingsRatings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The
Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond
such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified
The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not ensured.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
Maximum allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given in Absolute Maximum Ratings, whichever is
lower.
Human body model, applicable std. JESD22-A114C.
Machine model, applicable std. JESD22-A115-A.
Operating Ratings
Temperature Range TMIN ≤ TA ≤ TMAX
−40°C ≤ TA ≤ +85°C
1.2V ≤ VDD ≤ 2.8V
Supply Voltage (VDD)
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Electrical Characteristics VDD = 1.5V (1) (2)
The following specifications apply for VDD = 1.5V, AV = –1V/V, RL = 32kΩ, f = 1kHz, unless otherwise specified. Limits apply
for TA = 25°C.
Symbol
IDD
Parameter
Conditions
LM48861
Typical (3)
Limit (4)
Units
(Limits)
Quiescent Power Supply Current
VIN = 0V, Both channels enabled
2
2.8
mA (max)
ISD
Shutdown Current
Shutdown Enabled
VSHDN = GND
0.01
1.5
µA (max)
VOS
Output Offset Voltage
VIN = 0V, RL = 32Ω
Both channels enabled
0.5
1.5
mV (max)
VIH
Shutdown Input Voltage High
1.4
V(min)
VIL
Shutdown Input Voltage Low
0.4
V(max)
TWU
Wake Up Time
PO
Output Power
500
700
μs (max)
THD+N = 1% RL = 32Ω, f = 1kHz,
Both channels in phase and active
VDD = 1.5V
VDD = 1.8V
13
22
12
20
mW (min)
mW (min)
THD+N = 1% RL = 16Ω, f = 1kHz,
Both channels in phase and active
VDD = 1.5V
VDD = 1.8V
12
24
mW
mW
RL = 10kΩ, f = 1kHz
VLINE-OUT
THD+N
Output Voltage to Line Out
VDD = 1.5V, THD+N = 1%, RL = 10kΩ
Total Harmonic Distortion + Noise
1.1
1
VRMS (min)
VDD = 1.8V, THD+N = 1%, RL = 10kΩ
1.3
1.2
VRMS (min)
PO = 8mW, f = 1kHz, RL = 32Ω
0.04
%
PO = 8mW, f = 1kHz, RL = 16Ω
0.07
%
VOLIF = 900mVRMS, f = 1kHz, RL = 10kΩ
0.001
%
VRIPPLE = 200mVP-P Sine, Inputs AC GND, C1 = C2 = 0.39μF
83
77
57
dB
dB
dB
RL = 32Ω, POUT = 8mW
(A-weighted), f = 1kHz
BW = 20Hz to 22kHz
102
dB
Crosstalk
RL = 32Ω, POUT = 5mW, f = 1kHz
93
dB
NOUT
Output Noise
A-weighted, AV = 5.1dB
R1 = R2 = 10kΩ, R3 = R4 = 18kΩ
5
μV
C-P
Click-Pop
Inputs Grounded
BW = <10Hz to >500kHz
79
dB
PSRR
Power Supply Rejection Ratio
SNR
Signal-to-Noise Ratio
XTALK
(1)
(2)
(3)
(4)
fRIPPLE = 217Hz
fRIPPLE = 1kHz
fRIPPLE = 15kHz
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum
RatingsRatings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The
Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond
such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified
The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not ensured.
Typical values represent most likely parametric norms at TA = +25ºC, and at the Recommended Operation Conditions at the time of
product characterization and are not ensured.
Datasheet min/max specification limits are ensured by test or statistical analysis.
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Typical Performance Characteristics
THD+N vs Frequency
VDD = 1.5V, RL = 16Ω, PO = 8mW
THD+N vs Frequency
VDD = 1.5V, RL = 32Ω, PO = 8mW
Figure 3.
Figure 4.
THD+N vs Frequency
VDD = 1.8V, RL = 16Ω, PO = 18mW
THD+N vs Frequency
VDD = 1.8V, RL = 32Ω, PO = 20mW
Figure 5.
Figure 6.
THD+N vs Output Power
VDD = 1.5V & 1.8V, RL = 16Ω, f = 1kHz
THD+N vs Output Power
VDD = 1.5V & 1.8V, RL = 32Ω, f = 1kHz
100
100
VDD = 1.8V
VDD = 1.8V
10
VDD = 1.5V
VDD = 1.5V
THD +N (%)
THD + N (%)
10
1
0.1
0.1
0.01
1m
6
1
2m
5m
10m
20m
50m 100m
0.01
1m
2m
5m
10m
20m
OUTPUT POWER (W)
OUTPUT POWER (W)
Figure 7.
Figure 8.
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50m 100m
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Typical Performance Characteristics (continued)
Power Dissipation vs Output Power
RL = 16Ω, f = 1kHz
Power Dissipation vs Output Power
RL = 32Ω, f = 1kHz
50
75
POWER DISSIPATION (mW)
POWER DISSIPATION (mW)
90
VDD = 1.8V
60
45
VDD = 1.5V
30
15
0
40
VDD = 1.8V
30
10
0
0
10
20
30
VDD = 1.5V
20
40
0
10
20
30
40
OUTPUT POWER/CHANNEL (mW)
OUTPUT POWER/CHANNEL (mW)
Figure 9.
Figure 10.
PSRR vs Frequency
VDD = 1.5V, VRIPPLE = 200mVP-P, RL = 32Ω
Output Power vs Supply Voltage
RL = 16Ω, f = 1kHz
0
140
OUTPUT POWER/CHANNEL (mW)
-10
-20
PSRR (dB)
-30
-40
-50
-60
-70
-80
-90
10
100
1000
10000
120
100
THD+N = 10%
80
60
40
20
THD+N = 1%
0
100000
1
1.25 1.5 1.75
FREQUENCY (Hz)
2.25 2.5 2.75
3
SUPPLY VOLTAGE (V)
Figure 11.
Figure 12.
Output Power vs Supply Voltage
RL = 32Ω, f = 1kHz
Supply Current vs Supply Voltage
No Load
3.5
100
3
80
SUPPLY CURRENT (mA)
OUTPUT POWER/CHANNEL (mW)
2
THD+N = 10%
60
40
THD+N = 1%
20
2.5
2
1.5
1
0.5
0
0
1
1.25 1.5 1.75
2
2.25 2.5 2.75
3
1
SUPPLY VOLTAGE (V)
Figure 13.
1.5
2
2.5
3
SUPPLY VOLTAGE (V)
Figure 14.
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Typical Performance Characteristics (continued)
Shutdown Current vs Supply Voltage
No Load
0
0.08
Crosstalk vs Frequency
VDD = 1.5V, POUT = 5mW, RL = 32Ω
CROSSTALK (dB)
SUPPLY CURRENT (uA)
-20
0.06
0.04
-40
-60
-80
0.02
-100
0
-120
1
1.5
2
2.5
3
10
100
Figure 15.
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10000
100000
FREQUENCY (Hz)
SUPPLY VOLTAGE (V)
8
1000
Figure 16.
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APPLICATION INFORMATION
GENERAL AMPLIFIER FUNCTION
The LM48861 headphone amplifier features TI’s ground referenced architecture that eliminates the large DCblocking capacitors required at the outputs of traditional headphone amplifiers. A low-noise inverting charge
pump creates a negative supply (CPVSS) from the positive supply voltage (VDD). The headphone amplifiers
operate from these bipolar supplies, with the amplifier outputs biased about GND, instead of a nominal DC
voltage (typically VDD/2), like traditional amplifiers. Because there is no DC component to the headphone output
signals, the large DC-blocking capacitors (typically 220μF) are not necessary, conserving board space and
system cost, while improving frequency response.
COMMON MODE SENSE
The LM48861 features a ground (common mode) sensing feature. In noisy applications, or where the headphone
jack is used as a line out to other devices, noise pick up and ground imbalance can degrade audio quality. The
LM48861 COM input senses and corrects any noise at the headphone return, or any ground imbalance between
the headphone return and device ground, improving audio reproduction. Connect COM directly to the headphone
return terminal of the headphone jack Figure 17. No additional external components are required. Connect COM
to GND if the common-mode sense feature is not in use.
AUDIO
INPUT
COM
COMMON MODE SENSE
EQUIVALENT CIRCUIT
Figure 17.
MICRO POWER SHUTDOWN
The voltage applied to the shutdown (SHDN) pin controls the LM48861’s shutdown function. Activate micropower shutdown by applying a logic-low voltage to the SHDN pin. When active, the LM48861’s micro-power
shutdown feature turns off the amplifier’s bias circuitry, reducing the supply current. The trigger point is 0.4V
(max) for a logic-low level, and 1.4V (min) for a logic-high level. The low 0.1μA (typ) shutdown current is
achieved by applying a voltage that is as near as ground as possible to the SHDN pin. A voltage that is higher
than ground may increase the shutdown current.
There are a few ways to control the micro-power shutdown. These include using a single-pole, single-throw
switch, a microprocessor, or a microcontroller. When using a switch, connect an external 100kΩ pull-up resistor
between the SHDN pin and GND. Connect the switch between the SHDN pin and VDD. Select normal amplifier
operation by closing the switch. Opening the switch connects the SHDN pin to ground, activating micro-power
shutdown. The switch and resistor ensure that the SHDN pin will not float. This prevents unwanted state
changes. In a system with a microprocessor or microcontroller, use a digital output to apply the control voltage to
the SHDN pin. Driving the SHDN pin with active circuitry eliminates the pull-up resistor.
POWER DISSIPATION
Power dissipation is a major concern when using any power amplifier, especially one in mobile devices. In the
LM48861, the power dissipation comes from the charge pump and two operational amplifiers. Refer to the
Figure 10 Power Dissipation vs Output Power curve in the Typical Performance Characteristics section of the
datasheet to find the power dissipation associated the output power level of the LM48861. The power dissipation
should not exceed the maximum power dissipation point of the DSBGA package given in Equation 1.
PDMAX = (TJMAX - TA) / (θJA)
(1)
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For the LM48861TM DSBGA package, θJA = 70°C/W. TJMAX = 150°C, and TA is the ambient temperature of the
system surroundings.
PROPER SELECTION OF EXTERNAL COMPONENTS
Power Supply Bypassing/Filtering
Proper power supply bypassing is critical for low noise performance and high PSRR. Place the supply bypass
capacitors as close to the supply pins as possible. Place a 1μF ceramic capacitor from VDD to GND. Additional
bulk capacitance may be added as required.
Charge Pump Capacitor Selection
Use low ESR ceramic capacitors (less than 100mΩ) for optimum performance.
Charge Pump Flying Capacitor (C5)
The flying capacitor (C5) affects the load regulation and output impedance of the charge pump. A C5 value that
is too low results in a loss of current drive, leading to a loss of amplifier headroom. A higher valued C5 improves
load regulation and lowers charge pump output impedance to an extent. Above 2.2μF, the RDS(ON) of the charge
pump switches and the ESR of C5 and C6 dominate the output impedance. A lower value capacitor can be used
in systems with low maximum output power requirements.
Charge Pump Hold Capacitor (C6)
The value and ESR of the hold capacitor (C6) directly affects the ripple on CPVSS. Increasing the value of C6
reduces output ripple. Decreasing the ESR of C6 reduces both output ripple and charge pump output impedance.
A lower value capacitor can be used in systems with low maximum output power requirements.
Power Supply Bypassing /Filtering
Proper power supply bypassing is critical for low noise performance and high PSRR. Place the supply bypass
capacitors as close to the device as possible. Typical applications employ a voltage regulator with 10µF and
0.1µF bypass capacitors that increase supply stability. These capacitors do not eliminate the need for bypassing
of the LM48861 supply pins. A 1µF capacitor is recommended.
Input Capacitor Selection
The LM48861 requires input coupling capacitors. Input capacitors block the DC component of the audio signal,
eliminating any conflict between the DC component of the audio source and the bias voltage of the LM48861.
The input capacitors create a high-pass filter with the input resistors RIN. The -3dB point of the high-pass filter is
found using Equation 2 below.
f = 1 / 2πRINCIN
Where
•
the value of RIN is selected based on the gain-setting resistor selection.
(2)
In relation to Figure 1, RIN = R1 = R2, CIN = C1 = C2.
The input capacitors can also be used to remove low frequency content from the audio signal. Small speakers
can not reproduce, and may even be damaged by low frequencies. High-pass filtering the audio signal helps
protect the speakers. When the LM48861 is using a single-ended source, power supply noise on the ground is
seen as an input signal. Setting the high-pass filter point above the power supply noise frequencies, 217Hz in a
GSM phone, for example, filters out the noise such that it is not amplified and heard on the output. Capacitors
with a tolerance of 10% or better are recommended for impedance matching and improved CMRR and PSRR.
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PCB Layout Guidelines
Minimize trace impedance of the power, ground and all output traces for optimum performance. Voltage loss due
to trace resistance between the LM48861 and the load results in decreased output power and efficiency. Trace
resistance between the power supply and ground has the same effect as a poorly regulated supply, increased
ripple and reduced peak output power. Use wide traces for power supply inputs and amplifier outputs to minimize
losses due to trace resistance, as well as route heat away from the device. Proper grounding improves audio
performance, minimizes crosstalk between channels and prevents switching noise from interfering with the audio
signal. Use of power and ground planes is recommended.
As described in the Common Mode Sense section, the LM48861 features a ground sensing feature. On the PCB
layout, connect the COM pin (pin D2) directly to the headphone jack ground and also to the left and right input
grounds. This will help correct any noise or any ground imbalance between the headphone return, input, and the
device ground, therefore improving audio reproduction.
The charge pump capacitors and traces connecting the capacitor to the device should be kept away from the
input and output traces to avoid any switching noise injected into the input or output.
Demo Board Schematic and Layout
Figure 18. Top Silkscreen Layer
Figure 19. Top Solder Mask
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Figure 20. Bottom Solder Mask
Figure 21. Top Layer
Figure 22. Layer 2
Figure 23. Layer 3
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Figure 24. Bottom Layer
Figure 25. Bottom Silkscreen
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REVISION HISTORY
14
Rev
Date
1.0
06/11/08
Initial release.
1.01
02/08/10
Input text edits.
B
05/02/2013
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Description
Changed layout of National Data Sheet to TI format.
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PACKAGE OPTION ADDENDUM
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24-Sep-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
LM48861TM/NOPB
ACTIVE
Package Type Package Pins Package
Drawing
Qty
DSBGA
YFQ
12
250
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
Op Temp (°C)
Device Marking
(4/5)
-40 to 85
G
K3
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
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Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
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24-Sep-2015
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
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2-Sep-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
LM48861TM/NOPB
Package Package Pins
Type Drawing
SPQ
DSBGA
250
YFQ
12
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
178.0
8.4
Pack Materials-Page 1
1.35
B0
(mm)
K0
(mm)
P1
(mm)
1.75
0.76
4.0
W
Pin1
(mm) Quadrant
8.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
2-Sep-2015
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM48861TM/NOPB
DSBGA
YFQ
12
250
210.0
185.0
35.0
Pack Materials-Page 2
MECHANICAL DATA
YFQ0012xxx
D
0.600
±0.075
E
TMD12XXX (Rev B)
D: Max = 1.64 mm, Min = 1.58 mm
E: Max = 1.24 mm, Min = 1.18 mm
4215079/A
NOTES:
A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994.
B. This drawing is subject to change without notice.
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12/12
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