INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD220N06L3,IIPD220N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pulsed 120 A PD Total Dissipation @TC=25℃ 36 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 4.2 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD220N06L3,IIPD220N06L3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA 60 VGS(th) Gate Threshold Voltage VDS=VGS; ID=11μA 1.2 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 2.2 V VGS=10V; ID=30A 22 mΩ Gate-Source Leakage Current VGS= 20V 0.1 μA IDSS Drain-Source Leakage Current VDS=60V; VGS= 0V 1 μA VSD Diode forward voltage IF=30A, VGS = 0V 1.2 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark