Kexin MMBTA45 Npn transistor Datasheet

Transistors
SMD Type
NPN Transistors
MMBTA45
(KMBTA45)
SOT-23-3
Unit: mm
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
1
● Complement to MMBTA93
0.55
● High Collector-Emitter Voltage
+0.2
1.6 -0.1
+0.2
2.8 -0.1
■ Features
2
+0.02
0.15 -0.02
+0.2
1.1 -0.1
+0.1
0.95 -0.1
+0.1
1.9 -0.2
1. Base
0-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
400
Collector - Emitter Voltage
VCEO
350
Emitter - Base Voltage
VEBO
6
V
Collector Current - Continuous
IC
200
ICM
300
Collector Power Dissipation
PC
350
mW
RθJA
357
℃/W
TJ
150
Tstg
-55 to 150
Junction Temperature
Storage Temperature Range
3. Collector
Unit
Collector Current -Pulsed
Thermal Resistance From Junction To Ambient
+0.1
0.68 -0.1
2. Emitter
mA
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
VCBO
Ic= 100 μA, IE= 0
400
VCEO
Ic= 1 mA, IB= 0
350
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC= 0
Collector-base cut-off current
ICBO
VCB= 400 V , IE= 0
100
Emitter cut-off current
IEBO
VEB= 4V , IC=0
100
Collector- base breakdown voltage
Collector- emitter breakdown voltage
*1
Collector-emitter saturation voltage *1
Base - emitter saturation voltage *1
DC current gain *1
Collector output capacitance
V
6
VCE(sat)1 IC=10 mA, IB=1mA
0.3
VBE(sat)
IC=10 mA, IB=1mA
0.75
hFE(1)
VCE= 10V, IC= 1mA
50
hFE(2)
VCE= 10V, IC= 10mA
80
hFE(3)
VCE= 10V, IC= 50mA
40
hFE(4)
VCE= 10V, IC= 100mA
40
fT
VCB= 20V, IE= 0,f=1MHz
VCE=20, IC= 10mA,f=30MHz
nA
0.2
VCE(sat)2 IC=50 mA, IB=5mA
Cob
Transition frequency
Unit
300
7
50
V
pF
MHz
*1: Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
■ Classification of hfe(2)
Type
MMBTA45
Range
80-300
Marking
MMBTA45-L
100-200
3D
www.kexin.com.cn
1
Transistors
SMD Type
NPN Transistors
MMBTA45
(KMBTA45)
■ Typical Characterisitics
Static Characteristic
16
56uA
10
Ta=100℃
hFE
64uA
DC CURRENT GAIN
(mA)
72uA
12
IC
COLLECTOR CURRENT
VCE= 10V
COMMON
EMITTER
Ta=25℃
80uA
14
hFE —— IC
1000
48uA
8
40uA
6
32uA
Ta=25℃
100
24uA
4
16uA
2
IB=8uA
0
0
5
10
15
COLLECTOR-EMITTER VOLTAGE
VCE
1
COLLECTOR CURRENT
(V)
VBEsat —— IC
1.0
VCEsat ——
300
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
10
0.1
20
0.8
Ta=25℃
0.6
Ta=100℃
0.4
10
IC
100
(mA)
IC
β=10
100
Ta=100℃
Ta=25℃
30
0.2
1
10
COLLECTOR CURRENT
Cob / Cib
——
VCB / VEB
CAPACITANCE
Pc
400
Ta=25℃
Cib
Cob
10
10
100
COLLECTOR CURRENT
f=1MHz
IE=0 / IC=0
100
1
(mA)
C
(pF)
500
IC
10
100
COLLECTOR POWER DISSIPATION
Pc (mW)
0.0
0.1
——
IC
(mA)
Ta
350
300
250
200
150
100
50
1
0.1
2
1
REVERSE VOLTAGE
www.kexin.com.cn
V
(V)
10
20
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃)
150
Similar pages