Transistors SMD Type NPN Transistors MMBTA45 (KMBTA45) SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 1 ● Complement to MMBTA93 0.55 ● High Collector-Emitter Voltage +0.2 1.6 -0.1 +0.2 2.8 -0.1 ■ Features 2 +0.02 0.15 -0.02 +0.2 1.1 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1. Base 0-0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 350 Emitter - Base Voltage VEBO 6 V Collector Current - Continuous IC 200 ICM 300 Collector Power Dissipation PC 350 mW RθJA 357 ℃/W TJ 150 Tstg -55 to 150 Junction Temperature Storage Temperature Range 3. Collector Unit Collector Current -Pulsed Thermal Resistance From Junction To Ambient +0.1 0.68 -0.1 2. Emitter mA ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max VCBO Ic= 100 μA， IE= 0 400 VCEO Ic= 1 mA， IB= 0 350 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 Collector-base cut-off current ICBO VCB= 400 V , IE= 0 100 Emitter cut-off current IEBO VEB= 4V , IC=0 100 Collector- base breakdown voltage Collector- emitter breakdown voltage *1 Collector-emitter saturation voltage *1 Base - emitter saturation voltage *1 DC current gain *1 Collector output capacitance V 6 VCE(sat)1 IC=10 mA, IB=1mA 0.3 VBE(sat) IC=10 mA, IB=1mA 0.75 hFE(1) VCE= 10V, IC= 1mA 50 hFE(2) VCE= 10V, IC= 10mA 80 hFE(3) VCE= 10V, IC= 50mA 40 hFE(4) VCE= 10V, IC= 100mA 40 fT VCB= 20V, IE= 0,f=1MHz VCE=20, IC= 10mA,f=30MHz nA 0.2 VCE(sat)2 IC=50 mA, IB=5mA Cob Transition frequency Unit 300 7 50 V pF MHz *1: Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. ■ Classification of hfe(2) Type MMBTA45 Range 80-300 Marking MMBTA45-L 100-200 3D www.kexin.com.cn 1 Transistors SMD Type NPN Transistors MMBTA45 (KMBTA45) ■ Typical Characterisitics Static Characteristic 16 56uA 10 Ta=100℃ hFE 64uA DC CURRENT GAIN (mA) 72uA 12 IC COLLECTOR CURRENT VCE= 10V COMMON EMITTER Ta=25℃ 80uA 14 hFE —— IC 1000 48uA 8 40uA 6 32uA Ta=25℃ 100 24uA 4 16uA 2 IB=8uA 0 0 5 10 15 COLLECTOR-EMITTER VOLTAGE VCE 1 COLLECTOR CURRENT (V) VBEsat —— IC 1.0 VCEsat —— 300 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 10 0.1 20 0.8 Ta=25℃ 0.6 Ta=100℃ 0.4 10 IC 100 (mA) IC β=10 100 Ta=100℃ Ta=25℃ 30 0.2 1 10 COLLECTOR CURRENT Cob / Cib —— VCB / VEB CAPACITANCE Pc 400 Ta=25℃ Cib Cob 10 10 100 COLLECTOR CURRENT f=1MHz IE=0 / IC=0 100 1 (mA) C (pF) 500 IC 10 100 COLLECTOR POWER DISSIPATION Pc (mW) 0.0 0.1 —— IC (mA) Ta 350 300 250 200 150 100 50 1 0.1 2 1 REVERSE VOLTAGE www.kexin.com.cn V (V) 10 20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150