Plastic-Encapsulate Transistors FEATURES CXT5401 (PNP) • Switching and amplification in high voltage Applications such as telephony • Low current(max. 500mA) • High voltage(max.160v) Marking: 5401 Maximum Ratings (Ta=25 Parameter unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC 500 mA Collector Power dissipation PC 500 mW 1. BASE SOT-89 2. COLLECTO Junction Temperature TJ Storage Temperature Tstg ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Symbol 3. EMITTER 150 -55to +150 unless otherwise specified) Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC= -100μA, IE=0 -160 V Collector-emitter breakdown voltage VCEO IC = -1mA, IB=0 -150 V Emitter-base breakdown voltage VEBO IE = -10μA, IC=0 -5 V Collector cut-off current ICBO VCB = -120 V, IE=0 -50 nA Emitter cut-off current IEBO VEB= -3V, IC=0 -50 nA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE(1) VCE= -5V, IC=-1 mA 50 hFE(2) VCE= -5V, IC= -10 mA 60 hFE(3) VCE= -5V, IC=-50 mA 50 VCE(sat) IC= -10 mA, IB= -1 mA -0.2 V VCE(sat) IC= -50 mA, IB= -5 mA -0.5 V VBE(sat) IC= -10 mA, IB= -1 mA -1 V VBE(sat) IC= -50 mA, IB= -5 mA VCE= -10V, IC= -10mA, f = 100MHz -1 V 300 MHz 6 pF 8 dB Transition frequency fT Output Capacitance Cob Noise Figure NF GUANGDONG HOTTECH 100 VCB=-10V, IE= 0,f=1MHz VCE= -5.0V, IC= -200μA, RS= 10Ω,f =10Hz to15.7kHz INDUSTRIAL CO,. LTD. 300 Page:P2-P1 Plastic-Encapsulate Transistors CXT5401 Typical Characteristics Static Characteristic - 30 COMMON EMITTER Ta=25℃ -200uA IC DC CURRENT GAIN -160uA -140uA - 20 -120uA -100uA - 15 -80uA - 10 VCE= -5V o Ta=100 C -180uA - 25 COLLECTOR CURRENT hFE —— IC 500 hFE (mA) - 35 o Ta=25 C 100 -60uA -40uA 10 - 5 IB=-20uA 0 0 -2 - 4 - 10 - 8 -6 - 12 COLLECTOR-EMITTER VOLTAGE VBEsat —— - 1.0 - 14 VCE IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) - 0.8 Ta=25℃ - 0.7 - 0.6 Ta=100℃ - 0.5 - 0.4 - 0.3 -0.1 -1 -10 COLLECTOR CURRENT Cob / Cib —— IC -100 IC Ta=100℃ Ta=25℃ -0.01 -0.1 -1 -10 COLLECTOR CURRENT (MHz) f=1MHz IE=0 / IC=0 o fT -100 IC (mA) —— IC 250 TRANSITION FREQUENCY C fT Ta=25 C - 500 - 100 -0.1 300 (pF) (mA) IC β=10 VCB / VEB Cib - 10 COLLECTOR CURRENT VCEsat —— (mA) 50 CAPACITANCE -1 -1 β=10 - 0.9 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 4 - 0.3 - 18 - 16 (V) 10 Cob 200 150 100 50 VCE=-10V o 1 - 0.5 -10 REVERSE VOLTAGE Pc COLLECTOR POWER DISSIPATION Pc (W) 0.6 —— V Ta=25 C 0 -0 -5 -10 -15 COLLECTOR CURRENT (V) -20 - IC -25 -30 (mA) Ta 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) 125 GUANGDONG HOTTECH 150 INDUSTRIAL CO,. LTD. Page:P2-P2