Spec. No. : C657T3 Issued Date : 2011.02.23 Revised Date :2012.06.14 Page No. : 1/5 CYStech Electronics Corp. BVCEO IC RCESAT PNP Epitaxial Planar Power Transistor BTA1640T3 -30V -7A 70mΩ(typ.) Features • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A. • Excellent current gain linearity. • RoHS compliant package. Symbol Outline BTA1640T3 TO-126 B：Base C：Collector E：Emitter E CB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits -30 -30 -18 -7 -10 (Note 1) 1 20 125 6.25 150 -55~+150 Unit V V V A W °C/W °C/W °C °C Note : 1. Single Pulse , Pw≦380μs, Duty≦2%. BTA1640T3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C657T3 Issued Date : 2011.02.23 Revised Date :2012.06.14 Page No. : 2/5 Characteristics (Ta=25°C) Symbol *BVCEO BVCBO BVEBO ICEO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 Min. -30 -30 -18 150 60 Typ. -0.2 -0.42 - Max. -10 -100 -100 -0.4 -0.7 -1.2 400 - Unit V V V μA nA nA V V V - Test Conditions IC=-10mA, IB=0 IC=-1mA, IE=0 IE=-1mA, IC=0 VCE=-30V, IB=0 VCB=-30V, IB=0 VEB=-15V, IC=0 IC=-3A, IB=-100mA IC=-5A, IB=-100mA IC=-3A, IB=-100mA VCE=-2V, IC=-500mA VCE=-2V, IC=-4A *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE 1 Rank A B Range 150~300 200~400 Ordering Information Device BTA1640T3 Package TO-126 (RoHS compliant) Shipping Marking 200 pcs / bag, 10 bags/box, 10 boxes/carton A1640 Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 VCE=2V Saturation Voltage---(mV) Current Gain---HFE 1000 100 VCE=1V 10 VCE(SAT) 1000 100 IC=100IB IC=50IB 10 1 BTA1640T3 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification Spec. No. : C657T3 Issued Date : 2011.02.23 Revised Date :2012.06.14 Page No. : 3/5 CYStech Electronics Corp. Typical Characteristics(Cont.) Saturation Voltage vs Collector Current On Voltage vs Collector Current 10000 On Voltage---VBE(on)(mV) Saturation Voltage---(mV) 10000 1000 VBE(SAT)@IC=50IB 100 VBE(ON)@VCE=2V 1000 100 1 10 100 1000 Collector Current---IC(mA) 10000 1 Typical Capacitance Characteristics 10000 Power Derating Curve 800 1.2 700 1 600 Power Dissipation---PD(W) Capacitance---(pF) 10 100 1000 Collector Collector---IC(mA) Cib 500 400 300 200 Cob 100 0 0.1 1 10 100 Reverse-biased Voltage---VR(V) 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature---TA(℃) Power Derating Curve Power Dissipation---PD(W) 25 20 15 10 5 0 0 BTA1640T3 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C657T3 Issued Date : 2011.02.23 Revised Date :2012.06.14 Page No. : 4/5 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTA1640T3 CYStek Product Specification Spec. No. : C657T3 Issued Date : 2011.02.23 Revised Date :2012.06.14 Page No. : 5/5 CYStech Electronics Corp. TO-126 Dimension Marking: A1640 Date Code □□□□ Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-126 Plastic Package CYStek Package Code: T3 *: Typical Millimeters Min. Max. 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 DIM A A1 b b1 c D E Inches Min. Max. 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 DIM e e1 h L L1 P Φ Millimeters Min. Max. *2.290 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 Inches Min. Max. *0.090 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1640T3 CYStek Product Specification