BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc • • • VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C Low Collector−Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc − BDX33B, 33C/34B, 34C Monolithic Construction with Build−In Base−Emitter Shunt Resistors Pb−Free Packages are Available* http://onsemi.com DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 65 WATTS MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage BDX33B, BDX34B BDX33C, BDX34C VCEO Collector−Base Voltage Vdc VCB Vdc IC 10 15 Adc Base Current IB 0.25 Adc Total Device Dissipation @ TC = 25_C Derate above 25°C PD 70 0.56 W W/_C TJ, Tstg −65 to +150 _C Symbol Max Unit RqJC 1.78 _C/W Operating and Storage Junction Temperature Range 2 3 Vdc 5.0 − Continuous − Peak 1 80 100 VEB Collector Current TO−220AB CASE 221A−09 STYLE 1 Unit 80 100 BDX33B, BDX34B BDX33C, BDX34C Emitter−Base Voltage Value MARKING DIAGRAM BDX3xyG AY WW THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. BDX3xy = Device Code x = 3 or 4 y = B or C A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 11 1 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: BDX33B/D BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) PD, POWER DISSIPATION (WATTS) 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 160 Figure 1. Power Derating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit 80 100 − − 80 100 − − 80 100 − − − − 0.5 10 − − 1.0 5.0 IEBO − 10 mAdc hFE 750 − − VCE(sat) − 2.5 Vdc VBE(on) − 2.5 Vdc VF − 4.0 Vdc OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0) VCEO(sus) BDX33B/BDX34B BDX33C/BDX34C Collector−Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0, RBE = 100) VCER(sus) BDX33B/BDX34B BDX33C/BDX33C Collector−Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) Collector Cutoff Current (VCE = 1/2 rated VCEO, IB = 0) Collector Cutoff Current (VCB = rated VCBO, IE = 0) Vdc Vdc VCEX(sus) BDX33B/BDX34B BDX33C/BDX34C Vdc ICEO TC = 25_C TC = 100_C mAdc ICBO TC = 25_C TC = 100_C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) mAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc) BDX33B, 33C/34B, 34C Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C Diode Forward Voltage (IC = 8.0 Adc) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. Pulse Test non repetitive: Pulse Width = 0.25 seconds. http://onsemi.com 2 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 RqJC(t) = r(t) RqJC RqJC = 1.92°C/W 0.02 t1 0.03 0.01 0.02 0.01 0.01 0.02 0.03 SINGLE PULSE D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 1. Thermal Response 500 ms IC, COLLECTOR CURRENT (AMP) 10 5.0 ms 1.0 ms 5.0 TC = 25°C 2.0 1.0 20 100 ms IC, COLLECTOR CURRENT (AMP) 20 dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.5 0.2 0.1 0.05 0.02 1.0 500 ms 10 5.0 ms 1.0 ms 5.0 2.0 1.0 0.5 0.2 0.1 TC = 25°C dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.05 BDX34B BDX34C 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.02 1.0 70 100 100 ms BDX33B BDX33C 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 70 100 Figure 2. Active−Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) = 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 300 1000 500 300 200 TJ = 25°C VCE = 4.0 Vdc IC = 3.0 Adc 100 50 30 20 10 TJ = 25°C 200 C, CAPACITANCE (pF) hFE , SMALL−SIGNAL CURRENT GAIN 10,000 5000 3000 2000 2.0 5.0 Cib 70 50 PNP NPN 1.0 Cob 100 10 20 50 100 f, FREQUENCY (kHz) 200 30 0.1 500 1000 Figure 3. Small−Signal Current Gain PNP NPN 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 50 100 BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) NPN BDX33B, 33C PNP BDX34B, 34C 20,000 20,000 VCE = 4.0 V VCE = 4.0 V 10,000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 TJ = 150°C 5000 3000 2000 25°C 1000 −55 °C 5000 2000 500 300 200 300 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 25°C 1000 500 0.1 TJ = 150°C 3000 5.0 7.0 10 −55 °C 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 5. DC Current Gain 3.0 TJ = 25°C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25°C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.5 0.7 1.0 0.3 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 Figure 6. Collector Saturation Region 3.0 3.0 TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25°C 2.0 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 2.5 2.0 1.5 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 0.5 10 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 7. “On” Voltages http://onsemi.com 4 5.0 7.0 10 BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) ORDERING INFORMATION Device BDX33B BDX33BG BDX33C BDX33CG BDX34B BDX34BG BDX34C BDX34CG Package Shipping † TO−220 TO−220 (Pb−Free) 50 Units / Rail TO−220 TO−220 (Pb−Free) 50 Units / Rail TO−220 TO−220 (Pb−Free) 50 Units / Rail TO−220 TO−220 (Pb−Free) 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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