Freescale MHV5IC2215NR2 Rf ldmos wideband integrated power amplifier Datasheet

Freescale Semiconductor
Technical Data
Document Number: MHV5IC2215N
Rev. 1, 5/2006
RF LDMOS Wideband Integrated
Power Amplifier
The MHV5IC2215NR2 wideband integrated circuit is designed for base
station applications. It uses Freescale’s High Voltage (28 Volts) LDMOS IC
technology and integrates a two - stage structure. Its wideband on - chip
matching design makes it usable from 1500 to 2200 MHz. The linearity
performances cover all modulation formats for cellular applications.
Driver Application
• Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ1 =
164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band (1930 1990 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through
13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain — 27.5 dB
ACPR @ 885 kHz Offset — - 60 dBc in 30 kHz Bandwidth
• Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band (2130 2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 24 dB
ACPR @ 5 MHz Offset — - 55 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 15 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
Features
• On - Chip Matching (50 Ohm Input, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel
VRD1
VRG1
VDS1
2 Stage IC
RFin
VDS2/RFout
VGS1
Quiescent Current
Temperature Compensation
VGS2
MHV5IC2215NR2
2170 MHz, 23 dBm, 28 V
SINGLE N - CDMA, SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
16
1
CASE 978 - 03
PFP - 16
N.C.
1
16
N.C.
VRD1
2
15
VDS2/RFout
VRG1
3
14
VDS2/RFout
VDS1
4
13
VDS2/RFout
GND
5
12
VDS2/RFout
RFin
6
11
VDS2/RFout
VGS1
VGS2
7
8
10
9
VDS2/RFout
N.C.
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHV5IC2215NR2
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Input Power
Pin
12
dBm
Symbol
Value (1)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Driver Application
(Pout = 23 dBm CW)
Unit
RθJC
°C/W
Stage 1, 28 Vdc, IDQ1 = 164 mA
Stage 2, 28 Vdc, IDQ2 = 115 mA
9.3
3.5
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
0 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
260
°C
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
W - CDMA Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm,
f = 2140 MHz, Single - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
23
24
27
dB
Gain Flatness in 60 MHz Bandwidth @ Pout = 23 dBm
f = 2110- 2170 MHz
GF
—
0.3
0.5
dB
ACPR
—
- 56
- 54
dBc
IRL
—
- 12
- 10
dB
Adjacent Channel Power Ratio
Input Return Loss
Typical N - CDMA Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm,
f = 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
@ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Gps
25.5
27.5
29
dB
GF
—
0.3
—
dB
ACPR
—
- 60
—
dBc
IRL
—
- 12
—
dB
Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 23 dBm
Φ
—
0.2
—
°
Delay @ Pout = 23 dBm Including Output Matching
Delay
—
1.5
—
ns
Gain Flatness @ Pout = 23 dBm
f = 1930 - 1990 MHz
Adjacent Channel Power Ratio
Input Return Loss
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MHV5IC2215NR2
2
RF Device Data
Freescale Semiconductor
W - CDMA DRIVER APPLICATION
1
NC
NC
16
Z13
VRD1
Z11
15
2
+
C8
VRG1
3
14
4
13
5
12
+
C7
VDS2
C6
Z12
VDS1
RF
INPUT
+
Z1
+
C5
Z2
C4
Z3
C10
Z5
Z6
Z7
Z8
Z9
Z10
RF
OUTPUT
C11
Z4
C9
11
6
C1
VGS1
10
7
R1
C2
R2
C3
VGS2
Quiescent Current
Temperature Compensation
8
Z1
Z2
Z3
Z4
Z5
Z6
Z7
NC
0.045″ x 0.1289″ Microstrip
0.0443″ x 0.0161″ Microstrip
0.0308″ x 0.0416″ x 0.03″ Taper
0.0161″ x 0.0685″ Microstrip
0.0838″ x 0.1759″ Microstrip
0.0503″ x 0.1759″ Microstrip
0.0922″ x 0.1759″ Microstrip
9
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.0105″ x 0.1200″ Microstrip
0.0559″ x 0.1145″ Microstrip
0.045″ x 0.2671″ Microstrip
0.0349″ x 0.3319″ Microstrip
0.0027″ x 2.0413″ Microstrip
0.0349″ x 0.9151″ Microstrip
Rogers 4350, 0.020″, εr = 3.5
Figure 3. MHV5IC2215NR2 Test Circuit Schematic
Table 6. MHV5IC2215NR2 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
22 pF, 50 V Chip Capacitor (0603)
06033J220GBT
AVX
C2, C3
6.8 pF, 50 V Chip Capacitors (0603)
06035J6R8BBT
AVX
C4, C7
1 μF, 35 V Tantalum Chip Capacitors
TAJA105K035R
Kemet
C5, C6
330 μF, 50 V Electrolytic Chip Capacitors
MCR35V337M10X16
Multicomp
C8
0.01 μF, 50 V Chip Capacitor (0805)
0805C103K5RACTR
Vishay
C9, C10
2.7 pF, 50 V Chip Capacitors (0603)
06035J2R7BBT
AVX
C11
15 pF, 25 V Chip Capacitor (0603)
06033J150GBT
AVX
R1, R2
1 kW Chip Resistors
P1.00KCCT- ND
Panasonic
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
3
W - CDMA DRIVER APPLICATION
C5
C6
C4
VD2
VD1
C7
C8
C1
C9
C10
C11
C2
C3
R2
VG2
R1
VG1
MHV5IC2215, Rev. 1
Figure 4. MHV5IC2215NR2 Test Circuit Component Layout
MHV5IC2215NR2
4
RF Device Data
Freescale Semiconductor
33
0
−6
30
27
−18
24
21
18
15
12
VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA
f1 = 2135 MHz, f2 = 2145 MHz, 2 x W−CDMA
10 MHz in 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
3
−54
−66
0.1
1
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. 2 - Carrier W - CDMA ACPR, IM3, Power
Gain and Power Added Efficiency
versus Output Power
25_C
24
85_C
PAE
20
VDD = 28 Vdc
IDQ1 = 164 mA
IDQ2 = 115 mA
f = 2140 MHz
20
30
10
10
IDQ1 = 164 mA
IDQ2 = 115 mA
f = 2140 MHz
25
Gps, POWER GAIN (dB)
40
25_C
26
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
−60
−30_C
1
24
23
22
32 V
20 V
21
VDD = 12 V
0
100
19
0
2
30
−4
28
7
−8
0
−10
−12
S11
VDD = 28 Vdc, Pout = 23 dBm CW
IDQ1 = 164 mA, IDQ2 = 115 mA
−21
1000
1500
2000
−14
2500
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
−16
3000
Gps, POWER GAIN (dB)
S21 (dB)
−2
−6
−14
8
6
10
12
14
Figure 7. Power Gain versus Output Power
14
−7
4
Pout, OUTPUT POWER (WATTS) CW
S11 (dB)
S21
28 V
20
Figure 6. Power Gain and Power Added
Efficiency versus Output Power
28
24 V
16 V
Pout, OUTPUT POWER (WATTS) CW
21
−42
PAE
0
Gps
18
0.1
ACPR
−48
50
85_C
−30
−36
IM3
6
TC = −30_C
22
−24
9
28
26
−12
Gps
IM3 (dBc), ACPR (dBc)
PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL W - CDMA DRIVER APPLICATION CHARACTERISTICS
TC = −30_C
26
25_C
24
85_C
22
20
VDD = 28 Vdc, Pout = 23 dBm CW
IDQ1 = 164 mA, IDQ2 = 115 mA
Two−Tone Measurements, Center Frequency = 2140 MHz
18
1900
1950
2000
2050
2100
2200
2150
2250
2300
f, FREQUENCY (MHz)
Figure 9. Power Gain versus Frequency
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS X AMPS2)
1.E+07
2nd Stage
1.E+06
1st Stage
1.E+05
1.E+04
90
100
110
120
130
140
150
160
170
180 190
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 10. MTTF Factor versus Junction Temperature
MHV5IC2215NR2
6
RF Device Data
Freescale Semiconductor
f = 2170 MHz
f = 2170 MHz
Zload
Zin
f = 2110 MHz
f = 2110 MHz
Zo = 50 Ω
VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm
Zin
f
MHz
Zin
Ω
Zload
Ω
2110
35.1 - j5.4
1.03 - j0.87
2140
34.1 - j1.8
0.99 - j0.61
2170
33.8 - j1.7
0.94 - j0.35
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 11. Series Equivalent Input and Load Impedance, 2140 MHz
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
7
N - CDMA DRIVER APPLICATION
1
NC
NC
16
Z11
VRD1
Z9
15
2
+
C8
VRG1
3
14
4
13
5
12
+
C7
VDS2
C6
Z10
VDS1
RF
INPUT
+
Z1
+
C5
Z2
C4
Z3
C10
Z5
Z6
Z7
Z8
RF
OUTPUT
C11
Z4
C9
11
6
C12
C1
VGS1
10
7
R1
C2
R2
C3
VGS2
Quiescent Current
Temperature Compensation
8
Z1
Z2
Z3
Z4
Z5
Z6
NC
0.045″ x 0.1289″ Microstrip
0.0443″ x 0.0161″ Microstrip
0.0308″ x 0.0416″ x 0.03″ Taper
0.0161″ x 0.0685″ Microstrip
0.1757″ x 0.2269″ Microstrip
0.1220″ x 0.1530″ Microstrip
9
Z7
Z8
Z9
Z10
Z11
PCB
0.1140″ x 0.0550″ Microstrip
0.045″ x 0.2671″ Microstrip
0.0349″ x 0.3319″ Microstrip
0.0027″ x 2.0413″ Microstrip
0.0349″ x 0.9151″ Microstrip
Rogers 4350, 0.020″, εr = 3.5
Figure 12. MHV5IC2215NR2 Test Circuit Schematic
Table 7. MHV5IC2215NR2 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
22 pF, 25 V Chip Capacitor (0603)
06033J220GBT
AVX
C2, C3
6.8 pF, 50 V Chip Capacitors (0603)
06035J6R8BBT
AVX
C4, C7
1 μF, 35 V Tantalum Chip Capacitors
TAJA105K035R
Kemet
C5, C6
330 μF, 50 V Electrolytic Chip Capacitors
MCR35V337M10X16
Multicomp
C8
0.01 μF, 50 V Chip Capacitor (0805)
0805C103K5RACTR
Vishay
C9, C10
2.4 pF, 50 V Chip Capacitors (0603)
06035J2R4BBT
AVX
C11
15 pF, 25 V Chip Capacitor (0603)
06033J150GBT
AVX
C12
1.5 pF, 50 V Chip Capacitor (0603)
06035J1R5BBT
AVX
R1, R2
1 kW Chip Resistors
P1.00KCCT- ND
Panasonic
MHV5IC2215NR2
8
RF Device Data
Freescale Semiconductor
N - CDMA DRIVER APPLICATION
C5
C6
C4
VD2
VD1
C8
C7
C1
C12
C9
C10
C11
C2
C3
R2
VG2
R1
VG1
MHV5IC2215, Rev. 1
Figure 13. MHV5IC2215NR2 Test Circuit Component Layout
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
9
44
−30
20
−36
16
−42
12
−48
ACPR
IM3
8
−54
PAE
4
−60
0
−66
0.1
1
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 14. 2 - Carrier N - CDMA ACPR, IM3, Power
Gain and Power Added Efficiency
versus Output Power
32
29
30
28
20
VDD = 28 Vdc
IDQ1 = 145 mA
IDQ2 = 105 mA
f = 1960 MHz
PAE
10
Pout, OUTPUT POWER (WATTS) CW
Figure 15. Power Gain and Power Added
Efficiency versus Output Power
10
0
100
−2
S21
24
−4
16
−6
8
−8
0
−10
−8
−16
−12
VDD = 28 Vdc
Pout = 23 dBm CW
IDQ1 = 145 mA
IDQ2 = 105 mA
−24
1000
1500
S11 (dB)
40
PAE, POWER ADDED EFFICIENCY (%)
Gps
Gps, POWER GAIN (dB)
−24
Gps
30
1
−18
24
50
26
0.1
−6
−12
IM3 (dBc), ACPR (dBc)
28
31
27
0
VDD = 28 Vdc, IDQ1 = 145 mA, IDQ2 = 105 mA, f1 = 1955 MHz
40 f2 = 1965 MHz, 2 x N−CDMA, 2.5 MHz Carrier Spacing
36 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @
32 0.01% Probability (CCDF)
S21 (dB)
PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL N - CDMA DRIVER APPLICATION CHARACTERISTICS
S11
2000
−14
2500
−16
3000
f, FREQUENCY (MHz)
Figure 16. Broadband Frequency Response
MHV5IC2215NR2
10
RF Device Data
Freescale Semiconductor
f = 1930 MHz
Zload
f = 1990 MHz
f = 1930 MHz
f = 1990 MHz
Zin
Zo = 50 Ω
VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm
Zin
f
MHz
Zin
Ω
Zload
Ω
1930
62.3 - j19.4
2.18 - j0.88
1960
54.1 - j20.7
2.15 - j1.18
1990
47.4 - j19.3
2.12 - j1.49
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 17. Series Equivalent Input and Load Impedance, 1960 MHz
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
11
Table 8. Common Source Scattering Parameters (VDC = 28 V, TC = 25_C, 50 ohm system)
IDQ1 = 164 mA, IDQ2 = 115 mA
S11
S21
S12
S22
f
MHz
1000
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.68244
21.958
3.27363
- 46.706
0.00073
9.794
0.98732
153.093
1200
0.60173
- 30.075
10.23125
- 119.333
0.00072
13.436
1.00029
126.919
1400
0.47213
- 92.332
13.7957
123.921
0.0007
- 2.999
0.94139
106.192
1600
0.39882
175.345
13.86577
44.495
0.00088
- 45.669
0.93605
87.096
1800
0.35107
59.2
16.61251
- 38.246
0.00141
- 13.097
0.91624
65.161
2000
0.23689
- 70.587
17.30592
- 133.04
0.0018
- 35.967
0.88891
37.263
2200
0.21492
162.587
17.05916
121.911
0.00324
- 62.618
0.56059
- 24.504
2400
0.30222
113.328
6.44934
- 14.639
0.00275
- 134.469
0.69074
84.748
2600
0.46271
74.437
1.40717
- 89.824
0.00149
- 169.397
0.92384
34.554
2800
0.60247
39.529
0.39763
- 141.044
0.00109
167.909
0.958
6.133
3000
0.69273
8.867
0.10191
- 174.046
0.00129
122.208
0.9351
- 18.125
IDQ1 = 164 mA, IDQ2 = 345 mA
S11
S21
S12
S22
f
MHz
1000
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.67537
21.709
5.31667
- 50.942
0.0008
6.129
0.99279
152.416
1200
0.59017
- 29.975
15.91709
- 129.84
0.00067
- 0.12
0.99768
124.892
1400
0.46708
- 92.31
19.32081
119.077
0.00075
- 10.343
0.91612
105.353
1600
0.39635
174.623
20.10313
41.013
0.00083
- 45.427
0.91179
87.084
1800
0.32171
55.947
23.76068
- 42.642
0.00135
- 6.07
0.89001
65.729
2000
0.2053
- 76.58
24.4731
- 136.766
0.0017
- 34.308
0.86052
38.165
2200
0.20173
154.548
23.13058
117.16
0.00282
- 62.743
0.47971
- 18.382
2400
0.29085
112.112
8.78893
- 12.308
0.00276
- 133.95
0.65353
80.165
2600
0.46015
74.095
2.0309
- 88.099
0.00145
- 172.129
0.91226
34.199
2800
0.60229
39.22
0.58259
- 140.332
0.00109
165.352
0.95453
6.049
3000
0.69238
8.662
0.15083
- 173.655
0.00114
127.091
0.93394
- 18.148
IDQ1 = 164 mA, IDQ2 = 500 mA
S11
S21
S12
S22
f
MHz
1000
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.6711
21.546
5.75013
- 53.329
0.0007
24.45
0.99347
152.201
1200
0.58525
- 30.018
16.76169
- 134.625
0.00077
- 1.375
0.9925
124.548
1400
0.46378
- 92.504
19.69001
116.925
0.00076
5.296
0.91107
105.394
1600
0.39336
174.232
20.76629
39.298
0.0009
- 40.621
0.90699
87.053
1800
0.31114
55.471
24.51619
- 44.522
0.00124
- 10.794
0.88668
65.947
2000
0.19301
- 78.069
25.16732
- 138.656
0.00189
- 36.619
0.85513
38.413
2200
0.19638
152.604
23.41998
115.327
0.00305
- 62.675
0.46723
- 15.877
2400
0.28869
111.542
9.01024
- 12.58
0.00259
- 134.95
0.64185
79.222
2600
0.45971
73.791
2.10623
- 88.735
0.00142
- 166.566
0.90861
34.114
2800
0.60251
39.001
0.60593
- 141.146
0.00107
168.738
0.95346
6.03
3000
0.69282
8.463
0.15674
- 174.755
0.00121
124.35
0.93359
- 18.226
MHV5IC2215NR2
12
RF Device Data
Freescale Semiconductor
NOTES
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
13
NOTES
MHV5IC2215NR2
14
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
h X 45 _
A
E2
1
14 x e
16
D
e/2
D1
8
9
E1
8X
bbb
M
B
BOTTOM VIEW
E
C B
S
ÉÉ
ÇÇÇ
ÇÇÇ
ÉÉ
b1
Y
c
A A2
c1
b
DATUM
PLANE
SEATING
PLANE
H
M
ccc C
q
W
GAUGE
PLANE
W
L
C A
SECT W - W
L1
C
aaa
A1
1.000
0.039
S
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
b
b1
c
c1
e
h
q
aaa
bbb
ccc
MILLIMETERS
MIN
MAX
2.000
2.300
0.025
0.100
1.950
2.100
6.950
7.100
4.372
5.180
8.850
9.150
6.950
7.100
4.372
5.180
0.466
0.720
0.250 BSC
0.300
0.432
0.300
0.375
0.180
0.279
0.180
0.230
0.800 BSC
−−−
0.600
0_
7_
0.200
0.200
0.100
DETAIL Y
CASE 978 - 03
ISSUE C
PFP - 16
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
15
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MHV5IC2215NR2
Document Number: MHV5IC2215N
Rev. 1, 5/2006
16
RF Device Data
Freescale Semiconductor