ASI BLV30 Npn silicon rf power transistor Datasheet

BLV30
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV30 is Designed for
Television Band IV & V Applications
up to 860 MHz.
PACKAGE STYLE .280 4L STUD
A
45°
FEATURES:
C
• Common Emitter
• PG = 10 dB at 2.0 W/860 MHz
• Omnigold™ Metalization System
E
B
E
B
C
D
J
E
MAXIMUM RATINGS
IC
1.5 A
VCBO
60 V
VCEO
VEBO
I
F
G
H
K
#8-32 UNC
MAXIMUM
DIM
MINIMUM
inches / mm
inches / mm
30 V
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
4.0 V
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
O
PDISS
15.9 W @ TC = 25 C
TJ
-65 OC to +200 OC
TSTG
-65 OC to +150 OC
θJC
10 OC/W
.130 / 3.30
G
.245 / 6.22
H
SYMBOL
.255 / 6.48
.640 / 16.26
I
CHARACTERISTICS
.137 / 3.48
.572 / 14.53
F
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 10 mA
60
V
BVCEO
IC = 50 mA
30
V
BVEBO
IE = 4.0 mA
4.0
V
ICBO
VCB = 30 V
hFE
VCE = 25 V
COB
VCB = 28 V
PG
IMD1
VCE = 25 V
POUT = 2.0 W
IC = 500 mA
15
f = 1.0 MHz
IC = 410 mA
f = 860 MHz
10
-60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
4.0
mA
120
---
10
pF
dB
dBc
REV. B
1/1
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