HN58W241000I Two-wire serial interface 1M EEPROM (128-kword × 8-bit) REJ03C0138-0300 Rev.3.00 Jul.12.2005 Description HN58W241000I is the two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. It also has a 256-byte page programming function to make it’s write operation faster. Note: Renesas Technology’s serial EEPROM are authorized for using consumer applications such as cellular phone, camcorders, audio equipment. Therefore, please contact Renesas Technology’s sales office before using industrial applications such as automotive systems, embedded controllers, and meters. Features • • • • • • • • • • • • Single supply: 2.5 V to 3.6 V Two-wire serial interface (I2CTM serial bus*1) Clock frequency: 1 MHz Power dissipation: Standby: 1 µA (max) Active (Read): 1 mA (max) Active (Write): 4 mA (max) Automatic page write: 256-byte/page Write cycle time: 5.0 ms (max) Endurance: 105 Cycles Data retention: 10 Years Small size packages: SOP-8pin (200 mil-wide) Shipping tape and reel: 1,500 IC/reel Temperature range: −40 to +85°C Lead free products. Note: 1. I2C is a trademark of Philips Corporation. Ordering Information Type No. HN58W241000FPIE Rev.3.00, Internal organization Operating voltage 1M bit 2.5 V to 3.6 V (131,072 × 8-bit) Jul.12.2005, page 1 of 18 Frequency 1 MHz Package 200 mil 8-pin plastic SOP PRSP0008DG-B (FP-8DFV) Lead free HN58W241000I Pin Arrangement 8-pin SOP NC 1 8 VCC A1 2 7 WP A2 3 6 SCL GND 4 5 SDA (Top view) Pin Description Pin name Function A1, A2 SCL SDA WP VCC VSS Device address Serial clock input Serial data input/output Write protect Power supply Ground NC No connection Block Diagram High voltage generator Control logic A1, A2 SCL X decoder WP Address generator VSS Memory array Y decoder VCC Y-select & Sense amp. SDA Serial-parallel converter Absolute Maximum Ratings Parameter Symbol Supply voltage relative to VSS VCC Input voltage relative to VSS Vin Operating temperature range*1 Topr Storage temperature range Tstg Notes: 1. Including electrical characteristics and data retention. 2. Vin (min): −3.0 V for pulse width ≤ 50 ns. 3. Should not exceed VCC + 1.0 V. Rev.3.00, Jul.12.2005, page 2 of 18 Value −0.6 to +7.0 −0.5*2 to +7.0*3 −40 to +85 −65 to +125 Unit V V °C °C HN58W241000I DC Operating Conditions Parameter Symbol VCC VSS Input high voltage VIH Input low voltage VIL Operating temperature Topr Notes: 1. VIL (min): −1.0 V for pulse width ≤ 50 ns. 2. VIH (max): VCC + 1.0 V for pulse width ≤ 50 ns. Min 2.5 0 VCC × 0.7 −0.3*1 −40 Supply voltage Typ 0 Max 3.6 0 VCC + 0.5*2 VCC × 0.3 +85 Unit V V V V °C DC Characteristics (Ta = −40 to +85°C, VCC = 2.5 V to 3.6 V) Parameter Input leakage current Symbol ILI Min Typ Max 2.0 Unit µA Test conditions VCC = 3.6 V, Vin = 0 to 3.6 V (SCL, SDA) 20 µA VCC = 3.6 V, Vin = 0 to 3.6 V (A1, A2, WP) VCC = 3.6 V, Vout = 0 to 3.6 V Vin = VSS or VCC VCC = 3.6 V, Read at 1 MHz VCC = 3.6 V, Write at 1 MHz Output leakage current Standby VCC current Read VCC current Write VCC current ILO ISB ICC1 ICC2 2.0 1.0 1.0 4.0 µA µA mA mA Output low voltage VOL 0.4 V VCC = 2.5 to 3.6 V, IOL = 0.8 mA Capacitance (Ta = +25°C, f = 1 MHz) Parameter Symbol Input capacitance (A1 to A2, SCL, WP) Cin*1 Output capacitance (SDA) CI/O*1 Note: 1. This parameter is sampled and not 100% tested. Rev.3.00, Jul.12.2005, page 3 of 18 Min Typ Max Unit Test conditions 6.0 6.0 pF pF Vin = 0 V Vout = 0 V HN58W241000I AC Characteristics (Ta = −40 to +85°C, VCC = 2.5 to 3.6 V) Test Conditions • Input pules levels: VIL = 0.2 × VCC VIH = 0.8 × VCC • Input rise and fall time: ≤ 20 ns • Input and output timing reference levels: 0.5 × VCC • Output load: TTL Gate + 100 pF VCC = 2.5 to 3.6 V Symbol Min Typ Max Clock frequency fSCL 1000 Clock pulse width low tLOW 600 Clock pulse width high tHIGH 400 Noise suppression time tI 50 Access time tAA 100 550 Bus free time for next mode tBUF 500 Start hold time tHD.STA 250 Start setup time tSU.STA 250 Data in hold time tHD.DAT 0 Data in setup time tSU.DAT 100 Input rise time tR 300 Input fall time tF 100 Stop setup time tSU.STO 250 Data out hold time tDH 50 Write protect hold time tHD.WP 1000 Write protect setup time tSU.WP 0 Write cycle time tWC 5.0 Notes: 1. This parameter is sampled and not 100% tested. 2. tWC is the time from a stop condition to the end of internally controlled write cycle. Parameter Rev.3.00, Jul.12.2005, page 4 of 18 Unit kHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms Notes 1 1 1 2 HN58W241000I Timing Waveforms Bus Timing tF tHIGH 1/fSCL tLOW tR SCL tSU.STA tHD.DAT tSU.DAT tHD.STA tSU.STO SDA (in) tBUF tAA tDH SDA (out) tSU.WP tHD.WP WP Write Cycle Timing Stop condition Start condition SCL D0 in SDA Write data (Address (n)) Rev.3.00, Jul.12.2005, page 5 of 18 ACK tWC (Internally controlled) HN58W241000I Pin Function Serial Clock (SCL) The SCL pin is used to control serial input/output data timing. The SCL input is used to positive edge clock data into EEPROM device and negative edge clock data out of each device. Maximum clock rate is 1 MHz. Serial Input/Output Data (SDA) The SDA pin is bidirectional for serial data transfer. The SDA pin needs to be pulled up by resistor as that pin is opendrain driven structure. Use proper resistor value for your system by considering VOL, IOL and the SDA pin capacitance. Except for a start condition and a stop condition, which will be discussed later, the SDA transition needs to be completed during the SCL low period. Data Validity (SDA data change timing waveform) SCL SDA Data change Note: Data change High-to-low and low-to-high change of SDA should be done during the SCL low period. Rev.3.00, Jul.12.2005, page 6 of 18 HN58W241000I Device Address (A1, A2) Up to four devices can be addressed on the same bus by setting the levels on these pins to different combinations. The levels on these pins are compared with the device address code which are inputted thought the SDA pin. These device is selected if the compare is successfully done. These pins are internally pulled down to VSS. The device read these pins as low if unconnected. Pin Connections for A1, A2 Pin connection Memory size Max connect number A2 A1 Note 1M bit 4 VCC/VSS VCC/VSS 1 Note: 1. “VCC/VSS” means that device address pin should be connected to VCC or VSS. The A1 and A2 are read as VSS, if left unconnected. Write Protect (WP) When the Write Protect pin (WP) is high, the write protection feature is enabled and operates as shown in the following table. When the WP is low, write operation for all memory arrays are allowed. The read operation is always activated irrespective of the WP pin status. When left unconnected, the WP input is read as VIL because the WP pin is internally pulled down to VSS. Write Protect Area WP pin status VIH VIL Rev.3.00, Write protect area Full (1M bit) Normal read/write operation Jul.12.2005, page 7 of 18 HN58W241000I Functional Description Start Condition A high-to-low transition of the SDA with the SCL high is needed in order to start read, write operation. (See start condition and stop condition) Stop Condition A low-to-high transition of the SDA with the SCL high is a stop condition. The stand-by operation starts after a read sequence by a stop condition. In the case of write operation, a stop condition terminates the write data inputs and place the device in a internally-timed write cycle to the memories. After the internally-timed write cycle which is specified as tWC, the device enters a standby mode. (See write cycle timing) Start Condition and Stop Condition SCL SDA (in) Start condition Rev.3.00, Jul.12.2005, page 8 of 18 Stop condition HN58W241000I Acknowledge All addresses and data words are serially transmitted to and from in 8-bit words. The receiver sends a zero to acknowledge that it has received each word. This happens during ninth clock cycle. The transmitter keeps bus open to receive acknowledgment from the receiver at the ninth clock. In the write operation, EEPROM sends a zero to acknowledge after receiving every 8-bit words. In the read operation, EEPROM sends a zero to acknowledge after receiving the device address word. After sending read data, the EEPROM waits acknowledgment by keeping bus open. If the EEPROM receives zero as an acknowledge, it sends read data of next address. If the EEPROM receives acknowledgment "1" (no acknowledgment) and a following stop condition, it stops the read operation and enters a stand-by mode. If the EEPROM receives neither acknowledgment "0" nor a stop condition, the EEPROM keeps bus open without sending read data. Acknowledge Timing Waveform SCL 1 SDA IN Jul.12.2005, 8 9 Acknowledge out SDA OUT Rev.3.00, 2 page 9 of 18 HN58W241000I Device Addressing The EEPROM device requires an 8-bit device address word following a start condition to enable the chip for a read or a write operation. The device address word consists of 4-bit device code, 3-bit device address code and 1-bit read/write(R/W) code. The most significant 4-bit of the device address word are used to distinguish device type and this EEPROM uses “1010” fixed code. The device address word is followed by the 2-bit device address code. The device address code selects one device out of all devices which are connected to the bus. This means that the device is selected if the inputted 3-bit device address code is equal to the corresponding hard-wired A2 to A1 pin status. The third bit of the device address code is used as memory address. The eighth bit of the device address word is the read/write(R/W) bit. A write operation is initiated if this bit is low and a read operation is initiated if this bit is high. Upon a compare of the device address word, the EEPROM enters the read or write operation after outputting the zero as an acknowledge. The EEPROM turns to a stand-by state if the device code is not “1010” or device address code doesn’t coincide with status of the correspond hard-wired device address pins A1 to A2. Device Address Word Device code (fixed) 1M 1 0 1 Notes: 1. R/W=“1” is read and R/W = “0” is write. Rev.3.00, Jul.12.2005, page 10 of 18 Device address word (8-bit) Device address code 0 A2 A1 a16 R/W code*1 R/W HN58W241000I Write Operations Byte Write: A write operation requires an 8-bit device address word with R/W = “0”. Then the EEPROM sends acknowledgment "0" at the ninth clock cycle. After these, the EEPROM receives 2 sequence 8-bit memory address words. Upon receipt of this memory address, the EEPROM outputs acknowledgment "0" and receives a following 8-bit write data. After receipt of write data, the EEPROM outputs acknowledgment "0". If the EEPROM receives a stop condition, the EEPROM enters an internally-timed write cycle and terminates receipt of SCL, SDA inputs until completion of the write cycle. The EEPROM returns to a standby mode after completion of the write cycle. Start Rev.3.00, Jul.12.2005, 2nd Memory address (n) Write data (n) D7 D6 D5 D4 D3 D2 D1 D0 W 1st Memory address (n) a7 a6 a5 a4 a3 a2 a1 a0 1010 a16 Device address a15 a14 a13 a12 a11 a10 a9 a8 Byte Write Operation ACK R/W page 11 of 18 ACK ACK Stop HN58W241000I Page Write: The EEPROM is capable of the page write operation which allows any number of bytes up to 256 bytes to be written in a single write cycle. The page write is the same sequence as the byte write except for inputting the more write data. The page write is initiated by a start condition, device address word, memory address(n) and write data (Dn) with every ninth bit acknowledgment. The EEPROM enters the page write operation if the EEPROM receives more write data (Dn+1) instead of receiving a stop condition. The a0 to a7 address bits are automatically incremented upon receiving write data (Dn+1). The EEPROM can continue to receive write data up to 256 bytes. If the a0 to a7 address bits reaches the last address of the page, the a0 to a7 address bits will roll over to the first address of the same page and previous write data will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving write data and enters internally-timed write cycle. Page Write Operation Rev.3.00, Jul.12.2005, page 12 of 18 ACK ACK Write data (n+m) D5 D4 D3 D2 D1 D0 Write data (n) D7 D6 D5 D4 D3 D2 D1 D0 ACK R/W 2nd Memory address (n) a7 a6 a5 a4 a3 a2 a1 a0 Start W a15 a14 a13 a12 a11 a10 a9 a8 1010 1st Memory address (n) a16 Device address ACK ACK Stop HN58W241000I Acknowledge Polling: Acknowledge polling feature is used to show if the EEPROM is in a internally-timed write cycle or not. This feature is initiated by the stop condition after inputting write data. This requires the 8-bit device address word following the start condition during a internally-timed write cycle. Acknowledge polling will operate when the R/W code = “0”. Acknowledgment “1” (no acknowledgment) shows the EEPROM is in a internally-timed write cycle and acknowledgment “0” shows that the internally-timed write cycle has completed. See Write Cycle Polling using ACK. Write Cycle Polling Using ACK Send write command Send stop condition to initiate write cycle Send start condition Send device address word with R/W = 0 ACK returned No Yes Next operation is addressing the memory No Yes Proceed write operation Rev.3.00, Jul.12.2005, Send memory address Send start condition Proceed random address read operation Send stop condition page 13 of 18 Send stop condition HN58W241000I Read Operation There are three read operations: current address read, random read, and sequential read. Read operations are initiated the same way as write operations with the exception of R/W = “1”. Current Address Read: The internal address counter maintains the last address accessed during the last read or write operation, with incremented by one. Current address read accesses the address kept by the internal address counter. After receiving a start condition and the device address word (R/W is “1”), the EEPROM outputs the 8-bit current address data from the most significant bit following acknowledgment “0” If the EEPROM receives acknowledgment “1” (no acknowledgment) and a following stop condition, the EEPROM stops the read operation and is turned to a standby state. In case the EEPROM has accessed the last address of the last page at previous read operation, the current address will roll over and returns to zero address. In case the EEPROM has accessed the last address of the page at previous write operation, the current address will roll over within page addressing and returns to the first address in the same page. The current address is valid while power is on. The current address after power on will be indefinite. The random read operation described below is necessary to define the memory address. Current Address Read Operation Device address Start Rev.3.00, Jul.12.2005, page 14 of 18 R D7 D6 D5 D4 D3 D2 D1 D0 1 0 10 Read data (n+1) ACK R/W No ACK Stop HN58W241000I Random Read: This is a read operation with defined read address. A random read requires a dummy write to set read address. The EEPROM receives a start condition, device address word (R/W=0) and memory address 2 × 8-bit sequentially. The EEPROM outputs acknowledgment “0” after receiving memory address then enters a current address read with receiving a start condition. The EEPROM outputs the read data of the address which was defined in the dummy write operation. After receiving acknowledgment “1”(no acknowledgment) and a following stop condition, the EEPROM stops the random read operation and returns to a standby state. Random Read Operation Start ACK R/W ACK Device address 1010# Start ACK Dummy write Notes: 1. 2nd device address code (#) should be same as 1st (@). 2. Don't care bit. Rev.3.00, Jul.12.2005, page 15 of 18 *2 Read data (n) # 0 R/W ACK R D7 D6 D5 D4 D3 D2 D1 D0 W 2nd Memory address (n) a7 a6 a5 a4 a3 a2 a1 a0 @ a15 a14 a13 a12 a11 a10 a9 a8 1 0 1 0@ 1st Memory address (n) a16 Device address No ACK Stop Currect address read HN58W241000I Sequential Read: Sequential reads are initiated by either a current address read or a random read. If the EEPROM receives acknowledgment “0” after 8-bit read data, the read address is incremented and the next 8-bit read data are coming out. This operation can be continued as long as the EEPROM receives acknowledgment “0”. The address will roll over and returns address zero if it reaches the last address of the last page. The sequential read can be continued after roll over. The sequential read is terminated if the EEPROM receives acknowledgment “1” (no acknowledgment) and a following stop condition. Sequential Read Operation Rev.3.00, Jul.12.2005, ACK R/W page 16 of 18 ACK ACK ACK D5 D4 D3 D2 D1 D0 Read data (n+1) Read data (n+2) Read data (n+m) D7 D6 D5 D4 D3 D2 D1 D0 Start R D7 D6 D5 D4 D3 D2 D1 D0 1010 Read data (n) D7 D6 D5 D4 D3 D2 D1 D0 Device address No ACK Stop HN58W241000I Notes Data Protection at VCC On/Off When VCC is turned on or off, noise on the SCL and SDA inputs generated by external circuits (CPU, etc) may act as a trigger and turn the EEPROM to unintentional program mode. To prevent this unintentional programming, this EEPROM has a power on reset function. Be careful of the notices described below in order for the power on reset function to operate correctly. • SCL and SDA should be fixed to VCC or VSS during VCC on/off. Low to high or high to low transition during VCC on/off may cause the trigger for the unintentional programming. • VCC should be turned off after the EEPROM is placed in a standby state. • VCC turn on speed (tr) should be longer than 10 us (tr > 10 µs). Write/Erase Endurance and Data Retention Time The endurance for programming is 105 cycles (1% cumulative failure rate). The data retention time is more than 10 years. Noise Suppression Time This EEPROM have a noise suppression function at SCL and SDA inputs, that cut noise of width less than 50 ns. Be careful not to allow noise of width more than 50 ns. Rev.3.00, Jul.12.2005, page 17 of 18 HN58W241000I Package Dimensions HN58W241000FPIE (PRSP0008DG-B / Previous Code: JEITA Package Code P-SOP8-5.3x5.65-1.27 RENESAS Code PRSP0008DG-B *1 Previous Code FP-8DFV D 8 FP-8DFV) MASS[Typ.] 0.153g F NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. 5 c *2 E HE bp Reference Symbol Terminal cross section ( Ni/Pd/Au plating ) Index mark Dimension in Millimeters Min Nom Max D 5.65 5.85 E 5.30 A2 A1 1 Z *3 bp M c A1 A θ L Detail F y 0.35 0.40 0.45 0.15 0.20 0.25 8.10 8.20 page 18 of 18 1 θ 0° HE 8.00 e 10° 1.27 x 0.25 y 0.1 Z 1.02 0.40 L L Jul.12.2005, 0.254 b1 x c Rev.3.00, 0.14 1.73 bp 4 e 0.102 A L1 1 0.60 1.40 0.80 Revision History Rev. Date 0.0 1.00 Jul. 10, 2002 Nov.12, 2003 Page 2 19 2.00 Dec.13.2004 2 19 3.00 Jul.12.2005 1 4 5 18 HN58W241000I Data Sheet Contents of Modification Description Initial issue Change format issued by Renesas Technology Corp. Deletion of Preliminary Ordering Information Addition of HN58W241000FPIE Package Dimensions FP-8DF to FP-8DF, FP-8DFV Ordering Information Deletion of HN58W241000FPI Package Dimensions Deletion of FP-8DF Ordering Information Addition of Renesas package codes AC Characteristics Addition of tHD.WP Addition of tSU.WP Timing Waveforms Addition of WP Package Dimensions Addition of Renesas package codes Changed to Renesas formats Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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