MBRT120150 thru MBRT120200R
Silicon Power
Schottky Diode
VRRM = 150 V - 200 V
IF(AV) = 120 A
Features
• High Surge Capability
• Types from 150 V to 200 V VRRM
Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRT120150(R)
MBRT120200(R)
Unit
Repetitive peak reverse voltage
VRRM
150
200
V
RMS reverse voltage
VRMS
106
141
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
150
-55 to 150
-55 to 150
200
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
MBRT120150(R)
MBRT120200(R)
Unit
Average forward current (per
pkg)
IF(AV)
TC = 125 °C
120
120
A
Peak forward surge current
(per leg)
IFSM
tp = 8.3 ms, half sine
800
800
A
Maximum instantaneous forward
voltage (per leg)
VF
IFM = 60 A, Tj = 25 °C
0.88
0.92
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
10
30
1
10
30
mA
0.80
0.80
°C/W
Parameter
Thermal characteristics
Thermal resistance, junctioncase (per leg)
RΘJC
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MBRT120150 thru MBRT120200R
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MBRT120150 thru MBRT120200R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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