DMP3068L 30V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary V(BR)DS Features S ID max TA = +25°C Package RDS(ON) max -3.9A 72mΩ @ VGS = -10V -30V SOT-23 -3.6A 85mΩ @ VGS = -4.5V • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Description and Applications • This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching • Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 performance, making it ideal for high-efficiency power management applications. • Moisture Sensitivity: Level 1 per J-STD-020 • Lead-Free Plating (Matte Tin Finish Annealed over Alloy 42 Leadframe). • Terminals: Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Weight: 0.006 grams (Approximate) SOT23 D D G S G S Top View Pin Configuration Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMP3068L-7 DMP3068L-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information SOT23 68 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: B = 2014) M or M = Month (ex: 9 = September) 68 Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMP3068L Document number: DS37536 Rev. 2 - 2 Mar 3 2016 D Apr 4 May 5 2017 E Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D January 2015 © Diodes Incorporated DMP3068L Maximum Ratings (@TA = +25°C unless otherwise specified.) ADVANCED INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current (Note 6) Vgs= -10V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -30 ±12 -3.3 -2.6 ID A -3.9 -3.2 -18 ID Pulsed Drain Current (Pulse width ≤10µS, Duty Cycle ≤1%) Units V V IDM A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Symbol PD Steady State t<10s RθJA Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Value 0.7 182 133 1.2 103 75 -55 to +150 PD Steady State t<10s RθJA Operating and Storage Temperature Range TJ, TSTG Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -30 -1 ±100 V µA nA VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) -0.5 -1.3 V RDS (ON) 57 64 80 107 72 85 120 165 mΩ VSD -1.2 V VDS = VGS, ID = -250µA VGS = -10V, ID = -4.2A VGS = -4.5V, ID = -4.0A VGS = -2.5V, ID = -2.0A VGS = -1.8V, ID = -1.0A VGS = 0V, IS = -1.0A Ciss Coss Crss RG 708 57 47 14 pF pF pF Ω VDS = 0V, VGS = 0V, f = 1.0MHz QG 7.3 nC VDS = -15V, ID = -4A QG QGS QGD td(on) tr td(off) tf 15.9 1.2 1.7 3.5 15.8 70.3 33.9 nC VDS = -15V, ID = -4A ns VDS = -15V, VGS = -10V, ID = -4A, RG = 6.0Ω VDS = -15V, VGS = 0V, f = 1.0MHz 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1in. square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP3068L Document number: DS37536 Rev. 2 - 2 2 of 6 www.diodes.com January 2015 © Diodes Incorporated DMP3068L 20 VGS = -10V I D, DRAIN CURRENT (A) T A = 125°C VGS = -4.0V 14 VGS = -2.5V 12 10 8 VGS = -2.0V 6 TA = 25°C 15 T A = 85°C T A = -55°C 10 5 4 2 VGS = -1.5V 0 1 2 3 4 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.15 VGS = -2.5V 0.1 VGS = -4.5V VGS = -10V 0.05 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 0.25 I D = -4.2A 0.2 I D = -2.0A 0.15 0.1 0.05 20 0.15 0 0 2 4 6 8 10 12 V GS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 2 VGS = -10V 1.8 RD S(ON ), DRAIN-SOURCE ON-RES ISTANCE (NO RMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCED INFORMATION 16 T A = 150°C VDS = -5.0V VGS = -3.5V ID, DRAIN CURRENT (A) 18 20 VGS = -3.0V VGS = -4.5V T A = 150°C 0.1 T A = 125°C T A = 85°C T A = 25°C 0.05 T A = -55°C VGS = -4.5V 1.6 I D = -4.0A 1.4 1.2 VGS = -2.5V ID = -2.0A 1 0.8 0.6 0 0 5 10 15 ID , DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP3068L Document number: DS37536 Rev. 2 - 2 20 3 of 6 www.diodes.com 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( °C) Figure 6 On-Resistance Variation with Temperature January 2015 © Diodes Incorporated 1.5 VG S(TH), GATE THRESHOL D VOLTA GE (V) R DS(on ), DRAIN-SOURCE ON-RESI STANCE (Ω ) (No rma lize d) 0.2 0.15 VGS = -2.5V ID = -2.0A 0.1 VGS = -4.5V I D = -4.0A 0.05 0 -50 1.2 I D = -250µA 0.9 I D = -1mA 0.6 0.3 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000 20 -25 C T , JUNCTIO N CAPACITANCE (pF) IS, SOURCE CURRENT (A) f = 1MHz 15 TA = 150°C 10 T A= 125°C T A= 85°C 5 0 0 T A= 25°C 1000 Ciss C oss 100 Crss T A= -55°C 10 -30 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 100 -25 -20 -15 -10 -5 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 0 RDS(on) Limited VDS = -15V 8 I D = -4A ID , DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) ADVANCED INFORMATION DMP3068L 6 4 2 0 0 10 DC 1 PW = 10s PW = 1s PW = 100ms 0.1 T J(m ax) = 150°C PW = 10ms T A = 25°C 2 4 6 8 10 12 14 Q g, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP3068L Document number: DS37536 Rev. 2 - 2 16 V GS = 10V Single Pulse 0.01 DUT on 1 * MRP Board 4 of 6 www.diodes.com 0.1 PW = 1ms PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 January 2015 © Diodes Incorporated DMP3068L 1 ADVANCED INFORMATION r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthja (t) = r(t) * Rthja Single Pulse Rthja = 182°C/W Duty Cycle, D = t1/ t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest the version. All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm G F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMP3068L Document number: DS37536 Rev. 2 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com January 2015 © Diodes Incorporated DMP3068L ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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