LRC LMBT6429LT1G Amplifier transistor Datasheet

LESHAN RADIO COMPANY, LTD.
Amplifier Transistors
NPN Silicon
LMBT6428LT1G
LMBT6429LT1G
z We declare that the material of product
compliance with RoHS requirements.
ORDERING INFORMATION
Device
Marking
Shipping
LMBT6428LT1G
1KM
3000/Tape & Reel
LMBT6428LT3G
LMBT6429LT1G
1KM
1L
10000/Tape & Reel
LMBT6429LT3G
1L
3
3000/Tape & Reel
10000/Tape & Reel
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
6428LT1 6429LT1 Unit
Collector–Emitter Voltage
V CEO
50
45
Vdc
Collector–Base Voltage
V CBO
60
55
Vdc
Emitter–Base Voltage
V
Collector Current — Continuous
EBO
IC
6.0
Vdc
200
mAdc
3
COLLECTOR
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RθJA
556
°C/W
PD
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
RθJA
TJ , Tstg
DEVICE MARKING
LMBT6428LT1G = 1KM, LMBT6429LT1G = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
Vdc
(I C = 1.0 mAdc, I B = 0)
LMBT6428LT1G
50
—
(I C = 1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
LMBT6429LT1G
45
—
(I C = 0.1mAdc, I E = 0)
LMBT6428LT1G
60
—
(I C = 0.1mAdc, I E = 0)
LMBT6429LT1G
55
—
—
0.1
—
0.01
—
0.01
V (BR)CBO
Collector Cutoff Current
( V EB = 5.0Vdc, I C= 0)
µAdc
I CBO
( V CB = 30Vdc, I E = 0 )
Emitter Cutoff Current
µAdc
I CBO
( V CE = 30Vdc, )
Collector Cutoff Current
Vdc
I EBO
µAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1/5
LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
LMBT6428LT1G
LMBT6429LT1G
250
500
—
—
(I C = 0.1 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
250
500
650
1250
(I C = 1.0 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
250
500
—
—
(I C = 10 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
250
500
—
—
––
––
0.2
0.6
V BE(on)
0.56
0.66
Vdc
fT
100
700
MHz
C obo
––
3.0
pF
C ibo
––
8.0
pF
ON CHARACTERISTICS
DC Current Gain
(I C = 0.01 mAdc, V CE = 5.0 Vdc)
hFE
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 0.5 mAdc)
(I C = 100 mAdc, I B = 0.5 mAdc)
Base–Emitter On Voltage
(I C = 1.0 mAdc, V CE = 5.0mAdc)
––
VCE(sat)
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = 5.0 Vdc, I C = 1.0mAdc, f = 100 MHz)
Output Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB= 0.5 Vdc, I C = 0 , f = 1.0 MHz)
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2/5
LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
NOISE CHARACTERISTICS
(V CE = 5.0 Vdc, T A = 25°C)
NOISE VOLTAGE
30
30
20
I C = 10 mA
BANDWIDTH = 1.0 Hz
e n , NOISE VOLTAGE (nV)
e n , NOISE VOLTAGE (nV)
BANDWIDTH = 1.0 Hz
R S~
~0
3.0 mA
10
1.0 mA
7.0
5.0
300 µA
20
50 100 200
500
1k
2k
5k
10k 20k
100 Hz
7.0
10 kHz
1.0 kHz
5.0
3.0
0.01 0.02
50k 100k
0.05
0.1
0.2
0.5
1.0
2.0
5.0
f, FREQUENCY (Hz)
I C , COLLECTOR CURRENT (mA)
Figure 3. Effects of Collector Current
10
2.0
10
BANDWIDTH = 1.0 Hz
5.0
I C = 10 mA
3.0
NF, NOISE FIGURE (dB)
I n , NOISE CURRENT (pA)
f = 10 Hz
10
Figure 2. Effects of Frequency
7.0
3.0 mA
2.0
1.0 mA
1.0
0.7
0.5
300 µA
0.3
100 µA
0.2
0.1
RS~
~ 0
100 kHz
3.0
10
20
RS~
~ 0
10
20
BANDWIDTH = 10 Hz to 15.7 kHz
12
I C = 1.0 mA
500 µA
8.0
100 µA
10 µA
4.0
30 µA
10 µA
50 100 200
16
500
1k
2k
5k
10k 20k
0
10
50k 100k
20
50 100 200
500
1k
2k
5k
10k 20k
f, FREQUENCY (Hz)
R S , SOURCE RESISTANCE (Ω)
Figure 4. Noise Current
Figure 5. Wideband Noise Figure
50k 100k
100 Hz NOISE DATA
20
200
BANDWIDTH = 1.0 Hz
I C = 10 mA
100
3.0 mA
70
50
1.0 mA
300 µA
30
100 µA
20
30 µA
10
10 µA
7.0
5.0
NF, NOISE FIGURE (dB)
V T , TOTAL NOISE VOLTAGE (nV)
300
16
3.0 mA
I C = 10 mA
1.0 mA
12
300 µA
8.0
100 µA
30 µA
4.0
10 µA
BANDWIDTH = 1.0 Hz
3.0
0
10
20
50 100 200
500
1k
2k
5k
10k 20k
50k 100k
10
20
50 100 200
500
1k
2k
5k
10k 20k
R S , SOURCE RESISTANCE (Ω)
R S , SOURCE RESISTANCE (Ω)
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
50k 100k
3/5
LESHAN RADIO COMPANY, LTD.
h FE, DC CURRENT GAIN (NORMALIZED)
LMBT6428LT1G LMBT6429LT1G
4.0
3.0
V CE = 5.0 V
2.0
T A = 125°C
25°C
1.0
–55°C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I C , COLLECTOR CURRENT (mA)
1.0
T J = 25°C
V, VOLTAGE (VOLTS)
0.8
0.6
V BE @ V CE = 5.0 V
0.4
0.2
V CE(sat) @ I C /I B = 10
0
0.01 0.02 0.05 0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100
R θVBE , BASE– EMITTER
TEMPERATURE COEFFICIENT (mV/ °C)
Figure 8. DC Current Gain
–0.4
–0.8
–1.2
T J = 25°C to 125°C
–1.6
–2.0
–55°C to 25°C
–2.4
0.01 0.02 0.05
I C , COLLECTOR CURRENT (mA)
f T , CURRENT– GAIN — BANDWIDTH
PRODUCT (MHz)
C, CAPACITANCE (pF)
T J = 25°C
C ob
C ib
C eb
3.0
C cb
2.0
1.0
0.8
0.1
0.2
0.5
1.0
2.0
5.0
10
20
1.0 2.0
5.0
10
20
50
100
Figure 10. Temperature Coefficients
8.0
4.0
0.5
I C , COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages
6.0
0.1 0.2
50
100
50
300
200
100
V CE = 5.0 V
70
T J = 25°C
50
1.0
2.0
3.0
5.0
7.0 10
20
30
50
70
100
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain — Bandwidth Product
4/5
LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
A
B
C
D
G
H
J
G
C
D
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
DIM
B S
H
K
J
K
L
S
V
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
5/5
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