CM150DU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 150 Amperes/600 Volts TC Measured Point A B E F G U H J C2E1 E2 C1 G2 G2 CM D C 2 - Mounting Holes (6.5 Dia.) V G1 E1 K L M 3-M5 Nuts O P O Q Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. N 0.110 - 0.5 Tab P S R T E2 G2 C2E1 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking C1 E2 E1 G1 Outline Drawing and Circuit Diagram Dimensions A Inches 3.7 Millimeters 94.0 80.0±0.25 Dimensions Inches M 0.47 Millimeters 12.0 B 3.15±0.01 N 0.53 13.5 C 1.89 48.0 O 0.1 2.5 D 0.94 24.0 P 0.63 16.0 E 0.28 7.0 Q 0.98 25.0 F 0.67 17.0 R G 0.91 23.0 S 1.18 +0.04/-0.02 30.0 +1.0/-0.5 0.3 7.5 H 0.91 23.0 T 0.83 21.2 J 0.43 11.0 U 0.16 4.0 K 0.71 18.0 V 0.51 13.0 L 0.16 4.0 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150DU-12H is a 600V (VCES), 150 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 150 12 25 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-12H Dual IGBTMOD™ U-Series Module 150 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM150DU-12H Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 150 Amperes ICM 300* Amperes Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) IE 150 Amperes Peak Emitter Current** IEM 300* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 600 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M6 Mounting – 40 in-lb Weight – 310 Grams Viso 2500 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. ICES VCE = VCES, VGE = 0V – – 1 Units mA IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Voltage IC = 150A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts IC = 150A, VGE = 15V, Tj = 125°C – 2.6 – Volts Total Gate Charge QG VCC = 300V, IC = 150A, VGE = 15V – 300 Emitter-Collector Voltage** VEC IE = 150A, VGE = 0V – – – 2.6 nC Test Conditions Min. Typ. Max. Units – – 13.2 nf VCE = 10V, VGE = 0V – – 7.2 nf – – 2 nf VCC = 300V, IC = 150A, – – 100 ns Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Times Fall Time tr VGE1 = VGE2 = 15V, – – 350 ns td(off) RG = 4.2V, Resistive – – 300 ns tf Load Switching Operation – – 300 ns Diode Reverse Recovery Time** trr IE = 150A, diE/dt = -300A/µs – – 160 ns Diode Reverse Recovery Charge** Qrr IE = 150A, diE/dt = -300A/µs – 0.36 – µC **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Test Conditions Rth(j-c)Q Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module Rth(c-f) Per Module, Thermal Grease Applied Contact Thermal Resistance 26 Symbol Thermal Resistance, Junction to Case Per IGBT 1/2 Module Min. Typ. – – Max. 0.21 Units °C/W – – 0.47 °C/W – 0.035 – °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-12H Dual IGBTMOD™ U-Series Module 150 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) 300 14 13 VGE = 20V 240 15 12 180 11 120 10 60 9 5 VCE = 10V Tj = 25°C Tj = 125°C 240 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 180 120 60 8 0 0 0 2 4 6 8 3 2 1 4 8 12 16 0 20 80 160 240 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 102 IC = 300A 6 IC = 150A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) 8 102 101 Cies Coes 100 Cres IC = 60A 0 4 8 12 16 20 1.4 1.8 2.2 2.6 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY TIME, trr, (ns) VCC = 300V VGE = ±15V RG = 4.2 Ω Tj = 125°C tf td(off) 102 td(on) 101 100 101 tr 102 COLLECTOR CURRENT, IC, (AMPERES) 103 trr 101 Irr 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE di/dt = -300A/µsec Tj = 25°C 102 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 103 10-1 10-1 3.4 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 104 103 1.0 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0.6 0 320 VGE = 0V f = 1MHz Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 SWITCHING TIME, (ns) VGE = 15V Tj = 25°C Tj = 125°C 0 0 10 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 300 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 150A 16 VCC = 200V VCC = 300V 12 8 4 0 0 100 200 300 400 GATE CHARGE, QG, (nC) 27 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 28 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.21°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM150DU-12H Dual IGBTMOD™ U-Series Module 150 Amperes/600 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.47°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3