WINNERJOIN MMBT5551LT1 Npn epitaxial silicon transistor Datasheet

RoHS
MMBT5551LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
HIGH VOLTAGE TRANSISTOR
o
1
Collector Dissipation:Pc-225mW(Ta=25 )
Collector-Emiller Voltage: V CEO= 160V
2
1.
0.95
2.9
1.9
0.95
Symbol
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
V CBO
V CEO
R
T
V EBO
Emitter-Base Voltage
Ic
Collector Current
o
PD
Collector Dissipation Ta=25 C*
Tj
Junction Temperature
C
E
L
Electrical Characteristics
Parameter
IC
N
ABSOLUTE MAXIMUM RATINGS
O
T stg
Symbol
C
0.4
1.BASE
2.EMITTER
3.COLLECTOR
2.4
1.3
Storage Temperature
D
T
,. L
O
3
Unit:mm
o
(Ta=25 C)
Rating
Unit
180
V
160
V
6
V
600
mA
225
mW
150
O
-55~150
O
o
(Ta=25 C)
MIN. TYP. MAX. Unit
Condition
BV CBO
180
V
I C =100 A I E =0
Collector-Emitter Breakdown Voltage#
BV CEO
160
V
I C =1mA I B =0
Emitter-Base Breakdown Voltage
BV EBO
6
V
I E =10 A I C =0
Collector -Base Cutoff Current
I CBO
50
nA
V CB =120V, V C =0
Emitter-Base Cutoff Current
I EBO
50
nA
V CB =4V, I C =0
DC Current Gain
h FE1
80
V CE =5V, I C =1mA
DC Current Gain
h FE2
80
V CE =5V, I C =-10mA
DC Current Gain
h FE3
30
Collector-Base Breakdown Voltage
J
E
E
W
250
V CE =5V, I C =50mA
Collector-Emitter Saturation Voltage
V CE(sat)
0.5
V
I C =50mA, I B =5mA
Collector-Emitter Saturation Voltage
V CE(sat)
0.15
V BE(sat)
1
V
V
I C =10mA, I B =1mA
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V BE(sat)
1
V
I C =10mA, I B =1mA
Current Gain-Bandwidth Product
fT
100
C
C
I C =50mA, I B =1mA
MHz V CE =10V, I C =10mA,f=100MHz
300
o
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C
# Pulse Test: Pulse Width 300uS Duty cycle 2%
DEVICE MARKING:
2N5551S=Z1
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
RoHS
MMBT5551LT1
Typical Characteristics
500
h FE , CURRENT GAIN
300
V CE =1.0V
V CE =5.0V
。
T J =125 C
200
。
+25 C
100
。
-55 C
50
30
20
10
7.0
5.0
0.1
D
T
,. L
O
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
IC
7.0
10
C
20
30
50
70
100
N
I C, COLLECTOR CURRENT (mA)
V CE COLLECTOR EMITTER VOLTAGE (VOLTS)
DC Current Gain
R
T
C
E
L
1.0
0.9
0.8
0.7
0.6
I C =1.0mA
0.5
0.4
0.3
0.2
J
E
0.1
0
0.005
E
0.01
0.02
0.05
0.1
O
。
T J =25 C
10mA
0.2
30mA
0.5
1.0
100mA
2.0
5.0
10
20
I B, BASE CURRENT (mA)
Collector Saturation Region
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
50
Similar pages