RoHS MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 HIGH VOLTAGE TRANSISTOR o 1 Collector Dissipation:Pc-225mW(Ta=25 ) Collector-Emiller Voltage: V CEO= 160V 2 1. 0.95 2.9 1.9 0.95 Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage V CBO V CEO R T V EBO Emitter-Base Voltage Ic Collector Current o PD Collector Dissipation Ta=25 C* Tj Junction Temperature C E L Electrical Characteristics Parameter IC N ABSOLUTE MAXIMUM RATINGS O T stg Symbol C 0.4 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 Storage Temperature D T ,. L O 3 Unit:mm o (Ta=25 C) Rating Unit 180 V 160 V 6 V 600 mA 225 mW 150 O -55~150 O o (Ta=25 C) MIN. TYP. MAX. Unit Condition BV CBO 180 V I C =100 A I E =0 Collector-Emitter Breakdown Voltage# BV CEO 160 V I C =1mA I B =0 Emitter-Base Breakdown Voltage BV EBO 6 V I E =10 A I C =0 Collector -Base Cutoff Current I CBO 50 nA V CB =120V, V C =0 Emitter-Base Cutoff Current I EBO 50 nA V CB =4V, I C =0 DC Current Gain h FE1 80 V CE =5V, I C =1mA DC Current Gain h FE2 80 V CE =5V, I C =-10mA DC Current Gain h FE3 30 Collector-Base Breakdown Voltage J E E W 250 V CE =5V, I C =50mA Collector-Emitter Saturation Voltage V CE(sat) 0.5 V I C =50mA, I B =5mA Collector-Emitter Saturation Voltage V CE(sat) 0.15 V BE(sat) 1 V V I C =10mA, I B =1mA Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage V BE(sat) 1 V I C =10mA, I B =1mA Current Gain-Bandwidth Product fT 100 C C I C =50mA, I B =1mA MHz V CE =10V, I C =10mA,f=100MHz 300 o *Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C # Pulse Test: Pulse Width 300uS Duty cycle 2% DEVICE MARKING: 2N5551S=Z1 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS MMBT5551LT1 Typical Characteristics 500 h FE , CURRENT GAIN 300 V CE =1.0V V CE =5.0V 。 T J =125 C 200 。 +25 C 100 。 -55 C 50 30 20 10 7.0 5.0 0.1 D T ,. L O 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 IC 7.0 10 C 20 30 50 70 100 N I C, COLLECTOR CURRENT (mA) V CE COLLECTOR EMITTER VOLTAGE (VOLTS) DC Current Gain R T C E L 1.0 0.9 0.8 0.7 0.6 I C =1.0mA 0.5 0.4 0.3 0.2 J E 0.1 0 0.005 E 0.01 0.02 0.05 0.1 O 。 T J =25 C 10mA 0.2 30mA 0.5 1.0 100mA 2.0 5.0 10 20 I B, BASE CURRENT (mA) Collector Saturation Region W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] 50