LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. 3 1 2 SOT– 23 (TO–236AB) COLLECTOR 3 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 25 V 1 Collector-emitter voltage VCEO 20 V BASE Emitter-base voltage VEBO 12 V Collector current IC Collector power dissipation PC 0.5 A(DC) 1 A(Pulse) 0.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55∼+150 °C 2 EMITTER ∗ ∗ Single pulse Pw=100ms zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 25 − − V Collector-emitter breakdown voltage BVCEO 20 − − V IC=1mA Emitter-base breakdown voltage BVEBO 12 − − V IE=10µA ICBO − − 0.5 µA VCB=20V Parameter Collector cutoff current Conditions IC=10µA IEBO − − 0.5 µA VEB=10V VCE(sat) − 0.18 0.4 V IC/IB=500mA/20mA hFE 820 − 2700 − VCE=3V, IC=10mA fT∗ − 350 − MHz Output capacitance Cob − 8.0 − pF VCB=10V, IE=0A, f=1MHz Output On-resistance Ron − 0.8 − pF IB=1mA, Vi=100mV(rms), f=1kHz Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency VCE=10V, IE=−50mA, f=100MHz ∗ Measured using pulse current ƽ h FE Values Classification, Device Marking and Ordering Information hFE Marking Shipping L2SD2114KVLT1G 820~1800 BV 3000/Tape&Reel L2SD2114KVLT3G 820~1800 BV 10000/Tape&Reel L2SD2114KWLT1G 1200~2700 BW 3000/Tape&Reel L2SD2114KWLT3G 1200~2700 BW 10000/Tape&Reel Device Rev.O 1/4 LESHAN RADIO COMPANY, LTD. L2SD2114KVLT1G Series zElectrical characteristic curves 1.4µA 1.8µA 1.2µA 1.2 1.0µA 0.8µA 0.8 0.6µA 0.4µA 0.4 0.2µA IB=0 0 0 0.1 0.2 0.3 0.4 DC CURRENT GAIN : hFE 2000 1000 500 3V 1V 200 100 50 400 0.4mA 0.2mA 200 VCE=3V Measured using pulse current. 2000 1000 Ta=100°C 25°C −25°C 500 200 100 50 20 1 2 5 10 20 10 50 100 200 500 1000 1 IC/IB=25 Measured using pulse current. 1000 500 200 100 Ta=100°C 25°C −25°C 50 20 10 5 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC(mA) Fig.7 Collector-emitter saturation voltage vs. collector current(ΙΙ) 5 10 20 50 100 200 500 1000 Fig.5 DC current gain vs. collector current(ΙΙ) BASE SATURATION VOLTAGE : VBE(sat)(mV) 2000 2 10000 Ta=25°C Pulsed 5000 IC/IB=10 25 50 100 2000 1000 500 200 100 50 20 10 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC(mA) Fig.8 Base-emitter saturation voltage vs. collector current(Ι) Ta=100°C 25°C −25°C 200 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 BASE TO EMITTER VOLTAGE : VBE(V) Fig.3 Grounded emitter propagation characteristics 2000 Ta=25°C Measured using pulse current. 1000 500 200 100 50 IC/IB=100 50 25 20 10 10 5 2 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) Fig.4 DC current gain vs. collector current(Ι) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) 2 5000 COLLECTOR CURRENT : IC(mA) 2 Ta=25°C Measured using pulse current. IB=0mA 4 6 8 10 10000 20 10 0.6mA Fig.2 Grounded emitter output characteristics(ΙΙ) DC CURRENT GAIN : hFE Ta=25°C Measured using pulse current. VCE=5V 0.8mA 600 VCE=3V Measured using pulse current. 500 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.1 Grounded emitter output characteristics(Ι) 5000 1.2mA 1.0mA 0 0 0.5 COLLECTOR TO EMITTER VOLTAGE : VCE(V) 10000 800 COLLECTOR SATURATION VOLTAGE : V CE(sat)(mV) 2.0µA 1.6 1000 1.8mA 2.0mA 1.6mA 1.4mA Fig.6 Collector-emitter saturation voltage vs. collector current(Ι) BASE SATURATION VOLTAGE : VBE(sat) (mV) 1.6µA COLLECTOR CURRENT : IC(mA) 1000 Ta=25˚C COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) 2.0 10000 lC/lB=10 Measured using pulse current. 5000 Ta=−25°C 25°C 100°C 2000 1000 500 200 100 50 20 10 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC(mA) Fig.9 Base-emitter saturation voltage vs. collector current(ΙΙ) Rev.O 2/4 LESHAN RADIO COMPANY, LTD. Ta=25°C VCE=10V Measured using pulse current. 5000 2000 1000 500 200 100 50 20 10 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 1000 Ta=25°C f=1MHz IE=0A 500 200 100 50 20 10 5 2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.10 Gain bandwidth product vs. emitter current Ta=25°C f=1kHz Vi=100mV(rms) R L=1kΩ 50 20 10 5 2 1 0.5 0.2 1 0.1 0.2 EMITTER CURRENT : IE(mA) 100 ON RESISTANCE : Ron(Ω) TRANSITION FREQUENCY : fT (MHz) 10000 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) L2SD2114KVLT1G Series Fig.11 Collector output capacitance vs. collector-base voltage 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 BASE CURRENT : IB(mA) Fig.12 Output-on resistance vs. base current zRon measurement circuit RL=1kΩ Input vi 1kHz 100mV(rms) IB V Output v0 Ron= v0 vi−v0 ×RL Rev.O 3/4 LESHAN RADIO COMPANY, LTD. L2SD2114KVLT1G Series SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. ANODE 2. NO CONNECTION 3. CATHODE 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 4/4