DMP2022LSSQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(on) max ID max TA = +25C Low On-Resistance Low Gate Threshold Voltage 13mΩ @ VGS = -10V -9.3A Low Input Capacitance 16mΩ @ VGS = -4.5V -8.3A Fast Switching Speed 22mΩ @ VGS = -2.5V -7.2A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) V(BR)DSS -20V Features Description Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This MOSFET has been designed to minimize the on-state resistance PPAP Available (Note 4) and yet maintain superior switching performance, making it ideal for Mechanical Data high efficiency power management applications. Applications Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Power Management Functions DC-DC Converters SO-8 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.074g (approximate) S D S D S D G D TOP VIEW TOP VIEW Internal Schematic Ordering Information (Note 5) Part Number DMP2022LSSQ-13 Notes: Compliance Automotive Case SO-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 P2022LS YY WW 1 DMP2022LSSQ Document number: DS36875 Rev. 1 - 2 = Manufacturer’s Marking P2022LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 13 = 2013) WW = Week (01 - 53) 4 1 of 6 www.diodes.com March 2014 © Diodes Incorporated DMP2022LSSQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Drain-Source Voltage Characteristic VDSS -20 V Gate-Source Voltage VGSS 12 V ID -9.3 -7.4 A IDM -35 A Symbol Value Unit PD 1.6 W RJA 74 °C/W TJ, TSTG -55 to +150 °C TA = +25°C TA = +70°C Steady State Drain Current (Note 6) Pulsed Drain Current (Note 7) Unit Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Symbol Min Typ Max Unit Test Condition BVDSS -20 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 12V, VDS = 0V VGS(th) -0.6 -0.77 -1.1 V VDS = VGS, ID = -250µA 8 13 11 16 17 22 Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance RDS (ON) VGS = -10V, ID = -10A mΩ VGS = -4.5V, ID = -9A VGS = -2.5V, ID = -8A Forward Transconductance gfs 28 S VDS = -10V, ID = -10A Diode Forward Voltage (Note 8) VSD -0.5 -0.68 -1.2 V VGS = 0V, IS = -3A Input Capacitance Ciss 2575 pF Output Capacitance Coss 326 pF Reverse Transfer Capacitance Crss 261 pF Gate Resistance RG 10.9 Ω 28.1 60.2 DYNAMIC CHARACTERISTICS (Note 9) VDS = -10V, VGS = 0V f = 1MHz VGS = 0V VDS = 0V, f = 1MHz SWITCHING CHARACTERISTICS (Note 9) Total Gate Charge Qg Gate-Source Charge Qgs 5.9 Gate-Drain Charge Qgd 7.4 Turn-On Delay Time tD(on) 4.5 15 Turn-On Rise Time tr 3.3 20 Turn-Off Delay Time tD(off) 197 216 tf 60.5 153 Turn-Off Fall Time Notes: 6. 7. 8. 9. nC VDS = -10V, VGS = -4.5V, ID = -10A VDS = -10V, VGS = -10V, ID = -10A VDS = -10V, VGS = -10V, ID = -10A VDS = -10V, VGS = -10V, ID = -10A ns VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω Device mounted on 2 oz. Copper pads on FR-4 PCB. Pulse width 10S, Duty Cycle 1%. Short duration pulse test used to minimize self-heating effect. Guaranteed by design. Not subject to product testing. DMP2022LSSQ Document number: DS36875 Rev. 1 - 2 2 of 6 www.diodes.com March 2014 © Diodes Incorporated DMP2022LSSQ 30 26 VDS = -5.0V VGS = -4.5V 24 25 VGS = -4.0V 22 20 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 30 VGS = -10V 28 VGS = -3.5V VGS = -3.0V 18 VGS = -2.0V VGS = -2.5V 16 14 12 10 8 6 10 T A = 150C TA = 125C 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics T A = -55C RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.018 VGS = -2.5V 0.014 0.012 VGS = -4.5V 0.01 VGS = -10V 0.008 0.006 0.004 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0.5 2 0.02 0.016 20 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0.03 0.026 3 ID = -10A 0.028 ID = -9A ID = -8A 0.024 0.022 0.02 0.018 0.016 0.014 0.012 0.01 0.008 0.006 0.004 0 2 4 6 8 10 -VGS, GATE SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 12 1.6 0.014 VGS = -10V VGS = -4.5V ID = -9A TA = 150C 0.012 TA = 125C TA = 85C 0.01 T A = 25C 0.008 TA = -55C 0.006 0.004 TA = 85C TA = 25 C VGS = -1.6V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 15 5 4 2 0 20 1 3 5 7 9 11 13 15 17 19 -ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP2022LSSQ Document number: DS36875 Rev. 1 - 2 21 3 of 6 www.diodes.com 1.4 VGS = -10V ID = -10A 1.2 VGS = -2.5V ID = -8A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature March 2014 © Diodes Incorporated 0.024 1.4 0.022 0.02 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE () DMP2022LSSQ VGS = -2.5V ID = -8A 0.018 0.016 0.014 VGS = -4.5V ID = -9A 0.012 0.01 VGS = -10V ID = -10A 0.008 0.006 0.004 0.002 0 -50 1.2 -I D = 1mA 1 -ID = 250µA 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 30 10000 28 f = 1MHz CT, JUNCTION CAPACITANCE (pF) -IS, SOURCE CURRENT (A) 26 24 22 20 18 16 TA= 150C TA= 85C 14 12 10 TA= 125C T A= 25C 8 6 4 1000 Coss Crss TA= -55C 2 0 Ciss 0 100 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 0 2 4 6 8 10 12 14 16 18 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 20 1000 100 8 -ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) RDS(on) Limited 6 VDS = -10V ID = -10A 4 2 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP2022LSSQ Document number: DS36875 Rev. 1 - 2 4 of 6 www.diodes.com 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 TJ(max) = 150°C TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 0.01 0.01 PW = 1ms PW = 100µs 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 March 2014 © Diodes Incorporated DMP2022LSSQ 1 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 92°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions 0.254 Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMP2022LSSQ Document number: DS36875 Rev. 1 - 2 5 of 6 www.diodes.com March 2014 © Diodes Incorporated DMP2022LSSQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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