MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS10KM-10A FS10KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 ➁ 2.6 ± 0.2 ➀ ➁ ➂ ● 10V DRIVE ● VDSS ............................................................................... 500V ● rDS (ON) (MAX) .............................................................. 0.90Ω ● ID ......................................................................................... 10A 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ➀ GATE ➁ DRAIN ➂ SOURCE ➀ ➂ TO-220FN APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter Conditions VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA PD Avalanche current (Pulsed) Maximum power dissipation Tch Tstg Channel temperature Storage temperature Viso Isolation voltage AC for 1minute, Terminal to case Weight Typical value — VGS = 0V VDS = 0V L = 200µH Ratings Unit 500 ±30 V V 10 30 A A 10 35 A W –55 ~ +150 –55 ~ +150 °C °C 2000 V 2.0 g Sep. 2001 MITSUBISHI Nch POWER MOSFET FS10KM-10A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS V (BR) GSS Drain-source breakdown voltage Gate-source breakdown voltage I GSS I DSS Gate-source leakage current Drain-source leakage current VGS (th) Gate-source threshold voltage rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance t d (on) tr Turn-on delay time Rise time t d (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) Thermal resistance Limits Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 5A, VGS = 10V, R GEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case Unit Min. Typ. Max. 500 ±30 — — — — V V — — — — ±10 1 µA mA 2.5 3.0 3.5 V — — 0.70 3.5 0.90 4.5 Ω V 4.8 — 8.0 1100 — — S pF — — 110 25 — — pF pF — — 20 30 — — ns ns — 140 — ns — — 40 1.5 — 2.0 ns V — — 3.57 °C/W PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 20 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 50 100 150 7 5 3 2 200 tw = 10µs 101 7 5 3 2 100µs 100 1ms 7 5 3 2 10 ms TC = 25°C Single Pulse 10–1 7 5 3 2 DC 2 3 5 7 101 2 3 5 7 102 2 3 5 7 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 20V,10V,8V 6V TC = 25°C Pulse Test 16 PD = 35W 12 5V 8 4 VGS = 20V,10V,6V DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 8 TC = 25°C Pulse Test 6 5V 4 PD = 35W 2 4V 4V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS10KM-10A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 32 24 ID = 15A 16 10A 8 0 2.0 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 40 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 5A 0 4 8 12 16 1.6 VGS = 10V 1.2 VGS = 20V 0.8 TC = 25°C Pulse Test 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 20 16 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 7 5 12 8 4 0 TC = 25°C VDS = 10V Pulse Test 0 4 8 12 16 3 2 100 7 5 VDS = 10V Pulse Test 10–1 –1 10 20 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 5 3 Ciss 103 7 5 3 2 102 7 5 Coss TCh = 25°C VGS = 0V f = 1MHZ Crss 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) TC = 25°C,75°C,125°C 7 5 GATE-SOURCE VOLTAGE VGS (V) 3 2 101 101 3 2 104 7 5 3 2 3 2 2 td(off) 102 tf 7 5 3 td(on) 2 tr 101 7 5 10–1 2 3 5 7 100 TCh = 25°C VGS = 10V VDD = 200V RGEN = RGS = 50Ω 2 3 5 7 101 DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS10KM-10A HIGH-SPEED SWITCHING USE 20 200V 400V 12 8 4 TCh = 25°C ID = 10A 0 20 40 60 80 TC = 25°C SOURCE CURRENT IS (A) VDS = 100V 32 125°C 16 8 0 100 1.6 0.8 2.4 3.2 4.0 ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 3 2 100 7 5 3 2 –50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) 0.4 0 SOURCE-DRAIN VOLTAGE VSD (V) VGS = 10V 7 ID = 5A 5 Pulse Test 1.4 VGS = 0V Pulse Test GATE CHARGE Qg (nC) 101 10–1 75°C 24 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 40 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE Zth (ch –c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 = 0.5 2 100 = 0.2 7 5 = 0.1 3 = 0.05 2 = 0.02 7 5 3 2 PDM = 0.01 10–1 Single Pulse tw T D= tw T 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep. 2001