NTB5605P Power MOSFET −60 Volt, −18.5 Amp P−Channel, D2PAK http://onsemi.com Features • Designed for Low RDS(on) • Withstands High Energy in Avalanche and Commutation Modes • Pb−Free Packages are Available V(BR)DSS RDS(on) TYP ID MAX −60 V 120 mW @ −5.0 V −18.5 A Applications • • • • P−Channel Power Supplies PWM Motor Control Converters Power Management D G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter S Symbol Value Unit Drain−to−Source Voltage VDSS −60 V Gate−to−Source Voltage VGS $20 V Continuous Drain Current (Note 1) Steady State TA = 25°C ID −18.5 A Power Dissipation (Note 1) Steady State TA = 25°C PD 88 W IDM −55 A Operating Junction and Storage Temperature TJ, TSTG −55 to 175 °C Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 V, VGS = 5.0 V, IPK = 15 A, L = 3.0 mH, RG = 25 W) EAS 338 mJ TL 260 °C Symbol Max Unit RqJC 1.7 °C/W Pulsed Drain Current tp = 10 ms Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) Junction−to−Case (Drain) – Steady State 4 Drain 4 1 THERMAL RESISTANCE RATINGS Parameter MARKING DIAGRAM & PIN ASSIGNMENT Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1″ pad size (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu Area 0.41 in2). 2 NTB5605PG AYWW 3 D2PAK CASE 418B STYLE 2 NTB5605P A Y WW G 1 Gate 2 Drain 3 Source = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping † NTB5605P D2PAK 50 Units/Rail NTB5605PG D2PAK 50 Units/Rail Device (Pb−Free) NTB5605PT4 NTB5605PT4G D2PAK 800 Tape & Reel D2PAK (Pb−Free) 800 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 2 1 Publication Order Number: NTB5605P/D NTB5605P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(Br)DSS VGS = 0 V, ID = −250 mA −60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(Br)DSS/TJ Characteristic Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS −64 mV/°C VGS = 0 V TJ = 25°C −1.0 VDS = −60 V TJ = 125°C −10 IGSS VDS = 0 V, VGS = "20 V Gate Threshold Voltage VGS(th) VGS = VDS, ID = −250 mA Drain−to−Source On Resistance RDS(on) Gate−to−Source Leakage Current V mA "100 nA −1.5 −2.0 V VGS = −5.0 V, ID = −8.5 A VGS = −5.0 V, ID = −17 A 120 140 140 mW gFS VDS = −10 V, ID = −8.5 A 12 VDS(on) VGS = −5.0 V, ID = −8.5 A ON CHARACTERISTICS (Note 3) Forward Transconductance Drain−to−Source On Voltage −1.0 S −1.3 V CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge VGS = 0 V, f = 1.0 MHz, VDS = −25 V QG(TOT) VGS = −5.0 V, VDS = −48 V, ID = −17 A 730 1190 211 300 67 120 13 22 Gate−to−Source Charge QGS 4.0 Gate−to−Drain Charge QGD 7.0 td(on) 12.5 25 122 183 29 58 75 150 TJ = 25°C −1.55 −2.5 TJ = 125°C −1.4 pF nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = −5.0 V, VDD = −30 V, ID = −17 A, RG = 9.1 W tf ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time trr Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V IS = −17 A V 60 VGS = 0 V, dIS/dt = 100 A/ms, IS = −17 A QRR 39 21 0.14 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns nC NTB5605P 30 VGS = −10 V VGS = −9 V VGS = −8 V VGS = −7 V 25 TJ = 25°C 35 40 VGS = −6 V −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 40 VGS = −5.5 V VGS = −5 V VGS = −4.5 V 20 15 VGS = −4 V 10 VGS = −3.5 V 5 VDS = −10 V TJ = 25°C 30 TJ = 125°C 20 10 VGS = −3 V 0 0 0 2 4 6 8 1 3 5 7 9 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10 0 4 6 1 2 3 5 7 8 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.5 VGS = −5.0 V 0.45 0.4 0.35 0.3 TJ = 125°C 0.25 0.2 TJ = 25°C 0.15 0.1 TJ = −55°C 0.05 0 0 5 10 15 20 25 30 −ID, DRAIN CURRENT (AMPS) 0.25 TJ = 25°C 0.225 0.2 0.175 0.15 VGS = −5.0 V 0.125 0.1 VGS = −10 V 0.075 0.05 0.025 0 0 6 3 12 9 15 18 21 24 −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 2 1.8 9 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics VGS = 0 V ID = −8.5 A VGS = −5.0 V 1.6 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C 1.4 1.2 1 0.8 0.6 0.4 TJ = 150°C 1000 TJ = 125°C 100 10 0.2 0 −50 1 −25 0 25 50 75 100 125 150 5 10 15 20 25 30 35 40 45 50 55 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 VDS = 0 V VGS = 0 V TJ = 25°C Ciss 1600 1400 1200 1000 800 Crss Ciss 600 400 200 Coss Crss 0 10 5 −VGS 0 −VDS 5 10 15 25 20 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 2400 2200 2000 1800 8 60 7 VDS 6 45 QT 5 VGS 4 3 2 15 ID = −17 A TJ = 25°C 1 0 0 4 0 16 12 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 20 −IS, SOURCE CURRENT (AMPS) t, TIME (ns) 8 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation tr tf 100 td(off) 10 td(on) VDD = −30 V ID = −17 A VGS = −5.0 V 1 10 100 VGS = 0 V TJ = 25°C 15 10 5 0 0 0.25 1000 VGS = −20 V SINGLE PULSE TC = 25°C 100 dc 10 ms 1 ms 100 ms 1 0.1 0.1 RDS(on) Limit Thermal Limit Package Limit 1 0.75 1 1.25 1.5 1.75 10 ms 10 100 Figure 10. Diode Forward Voltage vs. Current EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 10 0.5 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (W) −ID, DRAIN CURRENT (AMPS) 30 QDS QGS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) C, CAPACITANCE (pF) NTB5605P 400 ID = −15 A 350 300 250 200 150 100 50 0 25 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) NTB5605P 1 D = 0.5 0.2 0.1 SINGLE PULSE 0.1 0.0001 0.05 0.01 0.001 0.01 0.1 1 t, TIME (s) Figure 13. Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 5 10 NTB5605P PACKAGE DIMENSIONS D2PAK CASE 418B−04 ISSUE J C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE H M T B M N R M STYLE 2: PIN 1. 2. 3. 4. P U L L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NTB5605P ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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