This product complies with the RoHS Directive (EU 2002/95/EC). FG694301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits Overview Package FG694301 is N-P channel dual type small signal MOS FET employed small size surface mounting package. Code SSMini6-F3-B Pin Name 1: Source (FET1) 2: Gate (FET1) 3: Drain (FET2) Features Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V) / 4 W (VGS = –4.0 V) High-speed switching Small size surface mounting package: SSMini6-F3-B Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Marking Symbol: V7 Internal Connection (D1) 6 Packaging Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard) FET1 FET2 Overall (S2) 4 FET2 Symbol Rating Unit Drain-source surrender voltage VDSS 30 V Gate-source surrender voltage VGSS ±12 V Drain current ID 100 mA Peak drain current IDP 200 mA Drain-source surrender voltage VDSS –30 V Gate-source surrender voltage VGSS ±12 V Drain current ID –100 mA Peak drain current IDP –200 mA Total power dissipation PT 125 mW Channel temperature Tch 150 °C Storage temperature Tstg -55 to +150 °C Publication date: January 2011 (G2) 5 FET1 Absolute Maximum Ratings Ta = 25°C Parameter 4: Source (FET2) 5: Gate (FET2) 6: Drain (FET1) Ver. AED 1 (S1) 2 (G1) 3 (D2) 1 This product complies with the RoHS Directive (EU 2002/95/EC). FG694301 Electrical Characteristics Ta = 25°C±3°C FET1 Parameter Symbol Conditions Min Typ Max Drain-source surrender voltage VDSS ID = 1 mA, VGS = 0 Drain-source cutoff current IDSS VDS = 30 V, VGS = 0 1.0 mA Gate-source cutoff current IGSS VGS = ±10 V, VDS = 0 ±10 mA Gate threshold voltage VTH ID = 1.0 mA, VDS = 3.0 V 1.0 1.5 V ID = 10 mA, VGS = 2.5 V 3 6 ID = 10 mA, VGS = 4.0 V 2 3 Drain-source ON resistance RDS(on) Forward transfer admittance Yfs 30 Unit V 0.5 ID = 10 mA, VDS = 3.0 V 20 W 55 mS 12 pF 7 pF 3 pF Short-circuit input capacitance (Common source) Ciss Short-circuit output capacitance (Common source) Coss Reverse transfer capacitance (Common source) Crss Turn-on time * ton VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA 100 ns Turn-off time * toff VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA 100 ns VDS = 3 V, VGS = 0, f = 1 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Test circuit VDD = 3 V ID = 10 mA RL = 300 Ω VGS = 0 V to 3 V VIN D G VOUT 90% VIN 10% VOUT 50 Ω 10% 90% S ton toff FET2 Parameter Symbol Conditions Min Typ Max Unit Drain-source surrender voltage VDSS ID = -1 mA, VGS = 0 Drain-source cutoff current IDSS VDS = -30 V, VGS = 0 -1.0 mA Gate-source cutoff current IGSS VGS = ±10 V, VDS = 0 ±10 mA Gate threshold voltage VTH ID = -1.0 mA, VDS = -3.0 V -1.0 -1.5 V ID = -10 mA, VGS = -2.5 V 7 17 ID = -10 mA, VGS = -4.0 V 4 7 Drain-source ON resistance RDS(on) Forward transfer admittance Yfs V -30 - 0.5 ID = -10 mA, VDS = -3.0 V 20 W 40 mS 12 pF 7 pF 3 pF Short-circuit input capacitance (Common source) Ciss Short-circuit output capacitance (Common source) Coss Reverse transfer capacitance (Common source) Crss Turn-on time * ton VDD = -3 V, VGS = 0 V to -3 V, ID = -10 mA 100 ns Turn-off time * toff VDD = -3 V, VGS = -3 V to 0 V, ID = -10 mA 100 ns VDS = -3 V, VGS = 0, f = 1 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Test circuit VDD = −3 V 10% ID = −10 mA VIN RL = 300 Ω 90% VOUT D VGS = 0 V to −3 V G 90% VIN VOUT 10% 50 Ω S 2 td(on) tr Ver. AED td(off) tf This product complies with the RoHS Directive (EU 2002/95/EC). FG694301 Common characteristics chart FG694301_ PT-Ta PT Ta 200 Total power dissipation PT (mW) 150 125 100 75 50 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of FET1I -V FG694301(FET1)_ D DS ID VDS Ta = 25°C 2.5 V VGS = 4.0 V 60 2.1 V 40 20 0 VDS = 3 V 102 1 Ta = 85°C 25°C 10−1 −30°C 10−2 1.5 V 0 0.1 0.2 0.3 1.8 V 0.4 0.5 Drain-source voltage VDS (V) 10−3 0 0.5 1.0 Drain-source ON resistance RDS(on) (Ω) 1.5 2.0 Gate-source voltage VGS (V) FG694301(FET1)_ RDS(on)-ID 102 RDS(on) VGS FG694301(FET1)_ RDS(on)-VGS 10 Drain current ID (mA) Drain current ID (mA) 80 ID VGS 102 2.5 Drain-source ON resistance RDS(on) (Ω) 100 FG694301(FET1)_ ID-VGS Ta = 25°C ID = 0.01 A 10 1 10−1 0 2 4 6 8 10 Gate-source voltage VGS (V) RDS(on) ID Ta = 25°C 10 VGS = 2.5 V 4.0 V 1 10−1 10−1 1 10 102 Drain current ID (mA) Ver. AED 3 This product complies with the RoHS Directive (EU 2002/95/EC). FG694301 FG694301(FET1)_|Yfs|-ID Ciss , Crss , Coss VDS 25 Yfs ID 1 Ta = 25°C Ta = 25°C VDS = 3 V Forward transfer admittance |Yfs | (S) 20 10−1 15 Ciss 10 Coss Crss 5 0 10−2 0 5 10 15 10−3 20 1 Characteristics charts of FET2I -V FG694301(FET2)_ D DS ID VDS −10 −2.5 V Drain current ID (mA) Drain current ID (mA) 103 VDS = −3 V Ta = 85°C −1 25°C −10−1 −40 −20 − 0.2 − 0.3 − 0.4 −30°C −10−2 −1.5 V − 0.1 − 0.5 Drain-source voltage VDS (V) −10−3 0 − 0.5 −1.0 RDS(on) ID Drain-source ON resistance RDS(on) (Ω) Ta = 25°C 10 VGS = −2.5 V −4.0 V 1 10−1 −10−1 −1 −10 −102 Drain current ID (mA) 4 −1.5 Gate-source voltage VGS (V) FG694301(FET2)_ RDS(on)-ID 102 RDS(on) VGS −102 VGS = −4.5 V 0 FG694301(FET2)_ RDS(on)-VGS ID VGS −60 0 103 FG694301(FET2)_ ID-VGS Ta = 25°C −80 102 Drain current ID (mA) Drain-source voltage VDS (V) −100 10 Drain-source ON resistance RDS(on) (Ω) Short-circuit input capacitance (Common source) Ciss , Reverse transfer capacitance (Common source) Crss , Short-circuit output capacitance (Common source) Coss (pF) FG694301(FET1)_Ciss , Crss , Coss -VDS Ver. AED −2.0 Ta = 25°C ID = − 0.01 A 102 10 1 0 −2 −4 −6 −8 Gate-source voltage VGS (V) −10 This product complies with the RoHS Directive (EU 2002/95/EC). FG694301 FG694301(FET2)_|Yfs|-ID Ciss , Crss , Coss VDS 25 Yfs ID 1 Ta = 25°C Forward transfer admittance |Yfs | (S) Short-circuit input capacitance (Common source) Ciss , Reverse transfer capacitance (Common source) Crss , Short-circuit output capacitance (Common source) Coss (pF) FG694301(FET2)_Ciss , Crss , Coss -VDS 20 Ta = 25°C VDS = −3 V 10−1 15 Ciss 10 10−2 Coss 5 0 Crss 0 −5 −10 −15 Drain-source voltage VDS (V) −20 10−3 −1 −10 −1 −10 −102 Drain current ID (mA) Ver. AED 5 This product complies with the RoHS Directive (EU 2002/95/EC). FG694301 SSMini6-F3-B Unit: mm 0.20 ±0.05 1.60 ±0.05 +0.05 5 4 1 2 3 (5°) 1.20 ±0.05 6 1.60 ±0.05 0.20 −0.02 (0.5) +0.05 0.13 −0.02 (0.5) (0.27) 1.00 ±0.05 0 to 0.05 0.55 ±0.05 (5°) 6 Ver. 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