MLN1037S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI MLN1037S is Designed for Class A Linear Applications up to 1.0 GHz. A 45° FEATURES: D S B S G • Class A Operation • PG = 8.0 dB at 5.0 W/1.0 GHz • Omnigold™ Metalization System C D J E I F G MAXIMUM RATINGS H K IC 10 A VCB 60 V VCE 35 V PDISS 140 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 5.5 °C/W DIM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 .137 / 3.48 .130 / 3.30 .245 / 6.22 H .255 / 6.48 .640 / 16.26 I J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10629 TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM .572 / 14.53 F G CHARACTERISTICS #8-32 UNC BVCEO IC = 50 mA BVCER IC = 50 mA BVEBO IE = 10 mA ICES VE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V PGE VCE = 20 V POUT = 5.0 W RBE = 10 Ω IC = 1.0 A MINIMUM TYPICAL MAXIMUM 35 V 60 V 4.0 V 10 f = 1.0 MHz ICQ = 800 mA f = 1.0 GHz UNITS 8.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5 mA 100 --- 15 pF dB REV. B 1/1