RF NLB-400-E Cascadable broadband gaas mmic amplifier dc to 6ghz Datasheet

NLB-400
NLB-400Cascadable
Broadband
GaAs MMIC
Amplifier DC to
6GHz
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 6GHz
RoHS Compliant & Pb-Free Product
Package Style: Micro-X, 4-Pin, Plastic
Features
„
„
„
„
„
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
3
GND
4
Reliable, Low-Cost HBT
Design
15.5dB Gain, +12.0dBm
P1dB@2GHz
High P1dB of
[email protected]
Single Power Supply Operation
50Ω I/O Matched for High
Freq. Use
MARKING - N4
RF IN 1
3 RF OUT
2
GND
Applications
„
„
„
Narrow and Broadband Commercial and Military Radio
Designs
Linear and Saturated Amplifiers
Gain Stage or Driver Amplifiers for MWRadio/Optical
Designs (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
Functional Block Diagram
Product Description
The NLB-400 cascadable broadband InGaP/GaAs MMIC amplifier is a lowcost, high-performance solution for general purpose RF and microwave
amplification needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NLB-400
provides flexibility and stability. The NLB-400 is packaged in a low-cost,
surface-mount plastic package, providing ease of assembly for high-volume tape-and-reel requirements.
Ordering Information
NLB-400Cascadable Broadband GaAs MMIC Amplifier DC to 6 GHz
NLB-400
NLB-400-T1
NLB-400-E
NBB-X-K1
Cascadable Broadband GaAs MMIC Amplifier DC to 6GHz
Tape & Reel, 1000 Pieces
Fully Assembled Evaluation Board
Extended Frequency InGaP Amp Designer’s Tool Kit
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
9
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A10 DS070123
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
3-23
NLB-400
Absolute Maximum Ratings
Parameter
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
3
Rating
Unit
RF Input Power
+20
dBm
Power Dissipation
300
mW
Device Current
70
mA
Channel Temperature
200
°C
Operating Temperature
-45 to +85
°C
Storage Temperature
-65 to +150
°C
Exceeding any one or a combination of these limits may cause permanent
damage.
Parameter
Min.
Specification
Typ.
Max.
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
Unit
Overall
Small Signal Power Gain, S21
Condition
VD =+3.9V, ICC =47mA, Z0 =50Ω, TA =+25°C
16.0
17.0
dB
13.0
dB
f=1.0GHz to 4.0GHz
11.5
dB
f=4.0GHz to 6.0GHz
Gain Flatness, GF
±0.65
dB
f=0.1GHz to 2.0GHz
Input VSWR
1.65:1
f=0.1GHz to 4.0GHz
1.65:1
f=4.0GHz to 6.0GHz
1.75:1
f=6.0GHz to 10.0GHz
10.8
Output VSWR
f=0.1GHz to 1.0GHz
1.5:1
f=0.1GHz to 4.0GHz
1.9:1
f=4.0GHz to 6.0GHz
2.2:1
f=6.0GHz to 10.0GHz
Bandwidth, BW
4.7
GHz
Output Power @
-1dB Compression, P1dB
12.0
dBm
f=2.0GHz
14.6
dBm
f=6.0GHz
4.1
dB
f=3.0GHz
+29.6
dBm
Noise Figure, NF
Third Order Intercept, IP3
+27.3
Reverse Isolation, S12
Device Voltage, VD
Gain Temperature Coefficient,
δGT/δT
3.9
-0.0015
f=2.0GHz
f=6.0GHz
-18
3.6
BW3 (3dB)
dB
4.2
f=0.1GHz to 12.0GHz
V
dB/°C
MTTF versus Temperature
@ ICC =50mA
Case Temperature
85
°C
Junction Temperature
119
°C
>1,000,000
hours
185
°C/W
MTTF
Thermal Resistance
θJC
3-24
J T – T CASE
--------------------------- = θ JC ( °C ⁄ Watt )
V D ⋅ I CC
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A10 DS070123
NLB-400
Function
RF IN
2
GND
3
RF OUT
Description
Interface Schematic
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor,
suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the
internal feedback loop and cause temperature instability.
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the DC
current into this pin to a desired level. The resistor value is determined by
the following equation:
( V CC – V DEVICE )
R = ------------------------------------------I CC
3
RF OUT
RF IN
Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating current
over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply near
5.0V is available, to provide DC feedback to prevent thermal runaway.
Because DC is present on this pin, a DC blocking capacitor, suitable for the
frequency of operation, should be used in most applications. The supply
side of the bias network should also be well bypassed.
4
GND
Same as pin 2.
B
D
4M
A
C
N5
1
2
3
4
5
E
6
0.08 S
Min.
A
B
C
D
E
F
G
H
J
K
L
M
N
0.535 REF.
2.39 2.54 2.69
0.436 0.510 0.586
2.19 2.34 2.49
1.91 2.16 2.41
1.32 1.52 1.72
0.10 0.15 0.20
0.535 0.660 0.785
0.05 0.10 0.15
0.65 0.75 0.85
0.85 0.95 1.05
4.53 4.68 4.83
4.73 4.88 5.03
MILLIMETERS
Nom. Max.
INCHES
Min.
Nom. Max.
0.021 REF.
0.094 0.100 0.106
0.017 0.020 0.023
0.086 0.092 0.098
0.075 0.085 0.095
0.052 0.060 0.068
0.004 0.006 0.008
0.021 0.026 0.031
0.002 0.004 0.006
0.025 0.029 0.033
0.033 0.037 0.041
0.178 0.184 0.190
0.186 0.192 0.198
NOTE: All dimensions are in millimeters, and
the dimensions in inches are for reference only.
H
F
Gauge Plane
Seating Plane
1J
G
S
L3
Rev A10 DS070123
Symbol
Package Drawing
2
0.1
Kx3
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
3-25
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
Pin
1
NLB-400
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
VCC
3
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
RCC
4
L choke
(optional)
1
In
3
Out
C block
C block
2
VDEVICE
Recommended Bias Resistor Values
Supply Voltage, VCC (V)
5
8
10
12
15
20
Bias Resistor, RCC (Ω)
23
87
129
172
236
343
3-26
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A10 DS070123
NLB-400
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
•
•
•
•
5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers
5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
2 Broadband Evaluation Boards and High Frequency SMA Connectors
Broadband Bias Instructions and Specification Summary Index for ease of operation
Rev A10 DS070123
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
3
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool
kit contains the following.
3-27
NLB-400
Tape and Reel Dimensions
All Dimensions in Millimeters
T
3
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
A
O
B
S
D
F
14.732 mm (7") REEL
ITEMS
Diameter
Plastic, Micro-X
SYMBOL SIZE (mm)
B
178 +0.25/-4.0
FLANGE Thickness
Space Between Flange
HUB
T
F
Outer Diameter
Spindle Hole Diameter
O
S
Key Slit Width
Key Slit Diameter
A
D
18.4 MAX
12.8 +2.0
SIZE (inches)
7.0 +0.079/-0.158
0.724 MAX
0.50 +0.08
76.2 REF
3.0 REF
13.716 +0.5/-0.2 0.540 +0.020/-0.008
1.5 MIN
20.2 MIN
0.059 MIN
0.795 MIN
LEAD 1
N3
N3
N3
N3
User Direction of Feed
4.0
All dimensions in mm
0.30
± 0.05
R0.3 MAX.
SEE NOTE 1
2.00 ± 0.05
5.0
+0.1
-0.0
A
SEE NOTE 6
5.0 MIN.
1.75
5.50 ± 0.05
B1
SEE NOTE 6
Bo
Ko
3.0
A1
Ao
8.0
A
12.0
± 0.3
R0.3 TYP.
SECTION A-A
NOTES:
1. 10 sprocket hole pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm.
3. Material: PS+C.
4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket.
5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.
6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.
3-28
Ao = 7.0 MM
A1 = 1.8 MM
Bo = 7.0 MM
B1 = 1.3 MM
Ko = 2.1 MM
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A10 DS070123
NLB-400
S11 versus Frequency, Over Temperature
S21 versus Frequency, Over Temperature
0.0
20.0
S11, +25°C
S11, -40°C
18.0
3
S11, +85°C
-5.0
16.0
-10.0
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
14.0
S21 (dB)
S11 (dB)
12.0
-15.0
10.0
8.0
6.0
-20.0
4.0
S21, +25°C
S21, -40°C
2.0
S21, +85°C
-25.0
0.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.0
1.0
2.0
3.0
Frequency (GHz)
4.0
5.0
6.0
7.0
8.0
Frequency (GHz)
S12 versus Frequency, Over Temperature
S22 versus Frequency, Over Temperature
0.0
0.0
S12, +25°C
S22, +25°C
S12, -40°C
S22, -40°C
-2.0
S22, +85°C
S12, +85°C
-5.0
-4.0
-6.0
-10.0
S22 (dB)
S12 (dB)
-8.0
-15.0
-10.0
-12.0
-14.0
-20.0
-16.0
-18.0
-25.0
-20.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.0
1.0
2.0
3.0
Frequency (GHz)
4.0
5.0
6.0
7.0
8.0
Frequency (GHz)
Output P1dB versus Frequency Across Temperature
Noise Figure versus Frequency at +25°C
16.0
6.0
14.0
5.0
Noise Figure (dB)
Output Power (dBm)
12.0
10.0
8.0
6.0
4.0
3.0
2.0
4.0
25°C
1.0
40°C
2.0
85°C
0.0
0.0
0.0
2.0
4.0
6.0
Frequency (GHz)
Rev A10 DS070123
8.0
10.0
12.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
3-29
NLB-400
Note: The s-parameter gain results shown include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB
10GHz to 14GHz=-0.50dB
15GHz to 20GHz=-1.08dB
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
3
RoHS* Banned Material Content
RoHS Compliant:
Yes
Package total weight in grams (g):
0.024
Compliance Date Code:
0602
Bill of Materials Revision:
-
Pb Free Category:
B i l l o f Ma te r i a l s
e3
Pa r ts Pe r Mi l l i o n (PPM )
Pb
Cd
Hg
Cr VI
PB B
PB DE
Di e
0
0
0
0
0
0
Mo l d i ng Co mp o und
0
0
0
0
0
0
Le a d F r a me
0
0
0
0
0
0
Di e Atta ch Ep o x y
0
0
0
0
0
0
Wi r e
0
0
0
0
0
0
So l d e r Pl a ti ng
0
0
0
0
0
0
Thi s R o HS b a nne d ma te r i a l co nte nt de cl a r a ti o n wa s pr e p a r e d so l e l y o n i nfo r ma ti o n, i ncl ud i ng a na l y ti ca l
d a ta , pr o vi d e d to R F M D by i ts sup pl i e r s, a nd a p p l i e s to the B i l l o f Ma te r i a l s (B OM ) r e vi si o n no te d
* DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the
use of certain hazardous substances in electrical and electronic equipment
3-30
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A10 DS070123
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