DIODES BAS70-05

BAS70/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
·
·
·
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
SOT-23
A
TOP VIEW
B
C
Mechanical Data
·
·
·
·
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams
Approx. Weight: 0.008 grams
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
0.61
E
0.45
G
G
1.78
2.05
H
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
D
E
Dim
M
K
J
L
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
BAS70-04 Marking: K74, K7D
BAS70 Marking: K73, K7C
BAS70-05 Marking: K75, K7E
BAS70-06 Marking: K76, K7F
Maximum Ratings and Electrical Characteristics, Single Diode @ TA = 25°C unless otherwise specified
Characteristic
Symbol
BAS70
Unit
VRRM
VRWM
VR
70
V
VR(RMS)
49
V
mA
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ tp < 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Electrical Ratings
IF
70
IFSM
100
mA
Pd
200
mW
RqJA
625
K/W
Tj
-55 to +125
°C
TSTG
-65 to +150
°C
@ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Symbol
Min
Max
Unit
Test Condition
V(BR)R
Forward Voltage
VF
—
410
1000
mV
tp <300µs, IF = 1.0mA
tp <300µs, IF = 15mA
Peak Reverse Current
IRM
¾
100
nA
tp < 300µs, VR = 50V
Junction Capacitance
Cj
¾
2.0
pF
VR = 0V, f = 1.0MHz
Reverse Recovery Time
trr
—
5.0
ns
IF = IR = 10mA to IR = 1.0mA,
RL =100W
Notes:
1. Valid Provided that terminals are kept at ambient temperature.
2. Test period <3000ms.
DS11007 Rev. L-2
1 of 1
BAS70/-04/-05/-06