APTGF100A120T3WG VCES = 1200V IC = 100A @ Tc = 80°C Phase leg NPT IGBT Power Module 25 26 27 28 31 Application • Welding converters 4 3 13 14 NTC 15 16 8 7 18 19 28 27 26 25 20 22 32 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS compliant 10 11 12 Pins 25/26/27/28 must be shorted together Pins 13/14/15/16 must be shorted together Pins 18/19/20/22 must be shorted together Absolute maximum ratings ICM VGE PD RBSOA TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 1200 130 100 200 ±20 657 200A @ 1150V Unit V May, 2009 IC Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF100A120T3WG – Rev 1 Symbol VCES APTGF100A120T3WG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Min VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 4mA VGE = 20V, VCE = 0V Typ 4.5 3.2 3.9 5.5 Min Typ Max Unit 250 3.7 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=100A Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A RG = 5.6Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A RG = 5.6Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 100A Tj = 125°C RG = 5.6Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C 6.5 1 0.5 nF 1.1 µC 120 50 310 20 ns 130 60 360 ns 30 12 mJ 5 650 A Reverse diode ratings and characteristics IRM IF Test Conditions Min Maximum Reverse Leakage Current VR=1200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/µs www.microsemi.com Unit V Tj = 25°C Tj = 125°C 100 500 Tc = 80°C 60 Tj = 125°C 2.5 3 1.8 Tj = 25°C 265 Tj = 125°C Tj = 25°C 350 560 Tj = 125°C 2890 IF = 60A VF Typ 1200 Maximum Peak Repetitive Reverse Voltage µA A 3 May, 2009 VRRM V ns nC 2-5 APTGF100A120T3WG – Rev 1 Symbol Characteristic APTGF100A120T3WG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.19 0.90 Unit °C/W V 150 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ T T ⎝ 25 ⎠⎦ ⎣ SP3 Package outline (dimensions in mm) 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGF100A120T3WG – Rev 1 May, 2009 28 17 1 APTGF100A120T3WG Typical Performance Curve Output Characteristics (VGE=15V) 200 175 175 TJ=25°C 150 125 100 50 VGE=20V 125 VGE=12V 100 VGE=9V 50 TJ=125°C 25 25 0 0 0 1 2 3 VCE (V) 4 5 6 0 1 2 3 4 VCE (V) 5 6 Energy losses vs Collector Current Transfert Characteristics 200 35 175 VCE = 600V VGE = 15V RG = 5.6 Ω TJ = 125°C 30 150 25 E (mJ) 125 TJ=125°C 100 75 Eon 20 15 10 50 TJ=25°C Eoff 5 25 0 0 5 6 7 8 9 10 11 0 12 25 50 75 100 125 150 175 200 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 40 250 VCE = 600V VGE =15V IC = 100A TJ = 125°C 30 25 200 Eon IC (A) 35 E (mJ) VGE=15V 75 75 IC (A) TJ = 125°C 150 IC (A) IC (A) Output Characteristics 200 20 150 100 15 VGE=15V TJ=125°C RG=5.6 Ω Eoff 10 50 5 0 0 0 10 20 30 40 Gate Resistance (ohms) 0 50 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.12 0.08 0.04 IGBT 0.7 May, 2009 0.16 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF100A120T3WG – Rev 1 Thermal Impedance (°C/W) 0.2 APTGF100A120T3WG Forward Characteristic of diode 120 80 ZVS 60 VCE=600V D=50% RG=5.6 Ω TJ=125°C TC=75°C 100 80 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 40 40 ZCS hard switching 20 20 TJ=25°C 20 0 0 TJ=125°C 60 40 60 IC (A) 80 100 0 0.00 120 0.50 1.00 1.50 2.00 VF (V) 2.50 3.00 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.8 Diode 0.9 0.7 0.6 0.5 0.4 0.2 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF100A120T3WG – Rev 1 May, 2009 rectangular Pulse Duration (Seconds)