PRELIMINARY DATASHET IDT70P3537 IDT70P3517 512K/256K x36 SYNCHRONOUS DUAL QDR-IITM ® Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ 18Mb Density (512K x 36) – Also available 9Mb Density (256K x 36) QDR-II x 36 Burst-of-2 Interface – Commercial: 233MHz, 250MHz Two independent ports – True Dual-Port Access to common memory Separate, Independent Read and Write Data Buses on each Port – Supports concurrent transactions Two-Word Burst on all DPRAM accesses DDR (Double Data Rate) Multiplexed Address Bus – One Read and One Write request per clock cycle DDR (Double Data Rate) Data Buses – Four word burst data (Two Read and Two Write) per clock on ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ each port – Four word transfers each of Read & Write per clock cycle per port (four word bursts on 2 ports) Octal Data Rate Port Enable pins (E0,E1) for depth expansion Dual Echo Clock Output with DLL-based phase alignment High Speed Transceiver Logic inputs – scaled to receive signals from 1.4V to 1.9V Scalable output drivers – Drives HSTL, 1.8V TTL or any voltage level from 1.4V to 1.9V – Output impedance adjustable from 35 ohms to 70 ohms 1.8V Core Voltage (VDD) 576-ball Flip Chip BGA (25mm x 25mm, 1.0mm ball pitch) JTAG Interface - IEEE 1149.1 Compliant Functional Block Diagram VREFL VREFR EP[1:0] ER[1:0] A0L- A17L(2) RL WL BW0 L - BW3 L KL LEFT PORT ADDRESS REGISTER AND LOGIC OR CL, CL KL, KL OR ADDRESS DECODE CR, CR KR, KR D0 R - D3 5 R KR KR KR SELECT OUTPUT KR CR RIGHT PORT DATA REGISTER AND LOGIC OUTPUT BUFFER WRITE REGISTER KL CL OUTPUT REGISTER MUX CQL, CQL 512/256K x 36 MEMORY ARRAY SENSE AMPS Q0 L - Q3 5 L SENSE AMPS OUTPUT BUFFER ZQL (1) MUX KL WRITE DRIVER OUTPUT REGISTER KL KL SELECT OUTPUT D0 L - D3 5 L LEFT PORT DATA REGISTER AND LOGIC WRITE REGISTER EL[1:0] ZQR (1) Q0 R - Q3 5 R CQR, CQR A0R- A17R(2) RR RIGHT PORT ADDRESS REGISTER AND LOGIC WR BW0 R - BW3 R KR KR KL TDI VREFL JTAG TDO TCK TMS TRST 5677 drw01 VREFR NOTES: 1. Input pin to adjust the device outputs to the system data bus impedance. 2. Address A17 is a INC for IDT70P3517. Disabled input pin (Diode tied to VDD and VSS). July 16, 2007 ©2007 Integrated Device Technology, Inc. All rights reserved. Advanced Datasheet for informational purposes only. Product specifications subject to change without notice. NOT AN OFFER FOR SALE The information presented herein is subject to a Non-Disclosure Agreement (NDA) and is for planning purposes only. Nothing contained in this presentation, whether verbal or written, is intended as, or shall have the effect of, a sale or an offer for sale that creates a contractual power of acceptance. "QDR SRAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semicondor, IDT, and Micron Tecnology, Inc." DSC-5677/1 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM Pin Configuration 70P3537 70P3517 RM-576 Ball Flip Chip BGA Top View A1 BALL PAD CORNER 1 2 3 4 VSS 5 6 7 8 9 10 11 12 13 14 15 16 17 18 VSS ZQR VSS VSS D17R VSS D16R D15R VDDQR Q17R VSS VDDQR D14R D13R Q16R D12R D11R VDDQR Q13R Q14R VDDQR VSS VSS D10R VSS Q11R Q12R VREFR VSS VDDQR Q9R Q10R VDDQR VSS D9R D8R VSS Q8R CQR D7R D6R VDDQR Q6R Q7R VDDQR D5R D4R Q4R Q5R D3R D2R VDDQR Q2R Q3R VDDQR D1R D0R Q0R Q1R D16L D17L VDDQL Q17L Q16L VDDQL D14L D15L Q15L Q14L D12L D13L VDDQL Q13L Q12L VDDQL D10L D11L VSS Q11L Q10L VREFL VSS VDDQL Q9L CQL VDDQL VSS D9L VSS Q8L Q7L D7L D8L VDDQL Q6L Q5L D5L D6L VSS Q4L Q3L D3L D4L VDDQL Q2L Q1L VDDQL D1L D2L VSS Q0L VSS D0L VDDQL VSS TDI VSS VSS ZQL VSS TMS 1 2 3 4 5 19 20 21 22 23 24 VSS VDDQR A2R A3R RR BW0R E0R VDD VREFR BW3R A8R A9R A14R A15R VDDQR VSS VSS VSS EP0 A4R A5R BW1R E1R VSS VDD BW2R WR A12R A13R INC VSS VSS A0R A1R A6R A7R KR KR CR CR A10R A11R A16R A17R VSS VDDQR VSS VDDQR VSS VSS VDDQR VSS VDDQR VSS VDDQR VSS Q34R Q33R VDDQR VSS VDD VSS VDD VDD VSS VDD VSS VDDQR VSS VDDQR Q32R Q31R VSS VDD VSS VDD VSS VSS VDD VSS VDD VSS VDDQR VSS Q30R Q29R VDDQR VSS VDD VSS VDD VDD VSS VDD VSS VDDQR VSS VDDQR Q28R Q27R VSS D26R VSS VSS VDD VSS VDD VSS VSS VDD VSS VDD VSS VDDQR VSS CQR Q26R VDDQR VSS VREFR VDDQR VSS VDD VSS VDD VDD VSS VDD VSS VDDQR VSS VDDQR Q25R Q24R VSS D24R D25R VSS VDD VSS VDD VSS VSS VDD VSS VDD VSS VDDQR VSS Q23R Q22R VDDQR D22R D23R VSS VDDQR VSS VDD VSS VDD VDD VSS VDD VSS VDDQR VSS VDDQR Q21R Q20R D20R D21R VDDQR VSS VDD VSS VDD VSS VSS VDD VSS VDD VSS VDDQR VSS Q19R Q18R VDDQR D18R D19R VSS VDDQL VSS VDD VSS VDD VDD VSS VDD VSS VDDQL VSS VDDQL Q34L Q35L D35L D34L VDDQL VSS VDD VSS VDD VSS VSS VDD VSS VDD VSS VDDQL VSS Q32L Q33L VDDQL D33L D32L VSS VDDQL VSS VDD VSS VDD VDD VSS VDD VSS VDDQL VSS VDDQL Q30L Q31L VDDQL VSS VDD VSS VDD VSS VSS VDD VSS VDD VSS VDDQL VSS Q28L Q29L VSS VDDQL VSS VDD VSS VDD VDD VSS VDD VSS VDDQL VSS VDDQL CQL Q27L VSS D27L D26L VDDQL VSS VDD VSS VDD VSS VSS VDD VSS VDD VSS VDDQL VSS Q25L Q26L VDDQL VSS VREFL VDDQL VSS VDD VSS VDD VDD VSS VDD VSS VDDQL VSS VDDQL Q23L Q24L VSS D25L VSS VDDQL VSS VDD VSS VDD VSS VSS VDD VSS VDD VSS VDDQL VSS Q21L Q22L VSS VDDQL VSS VDDQL VDDQL VSS VDDQL VSS VDDQL Q19L Q20L A0L A1L A6L A7L VDDQL EP1 A4L A5L VSS A2L A3L 6 7 8 A A MRST DOFFR B B VDDQR DEPTH VSS VSS VDDQR D35R VSS C C VDDQR VDDQR Q35R VSS D33R D34R VDDQR D31R D32R D D VSS Q15R VSS VDDQR E E VSS D29R D30R VDDQR D27R D28R F F VSS VDDQR G G H H VSS VDDQR J J VSS K K VSS VSS VDDQR L L VSS M M VSS VSS N N VSS P P VSS VSS R R VSS D31L D30L VDDQL D29L D28L T T VSS U U V V VSS W W VDDQL VSS Y Y VSS VDDQL D24L D23L AA AA VDDQL VDDQL VSS VSS KL KL CL CL A10L A11L A16L A17L VSS VDDQL BW1L E1L VDD VSS BW2L WL A12L A13L INC VDDQL RL BW0L E0L VREFL VDD BW3L A8L A9L A14L A15L 9 10 11 12 13 14 15 16 17 18 AB VDDQL VSS VSS D22L D21L Q18L VDDQL D20L D19L VSS VDDQL DOFFL D18L VSS VSS TRST TCK TDO VSS 19 20 21 22 23 AB AC AC AD AD VSS 24 5677 drw NOTE: 1. The package is 25mm x 25mm x 2.55mm with 1.0mm ball pitch; the customer will have to provide external airflow of 100LFM (0.5m/s) or higher at 250MHz. 2 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM Functional Description As a memory standard, the (Quad Data Rate) QDR-II SRAM interface has become increasingly common in high performance networking systems. With the QDR-II interface/configuration, memory throughput is increased without increasing the clock rate via the use of two unidirectional buses on each of providing 2 ports of QDR-II makes this a Dual-QDRII Static Ram two ports to transfer data without the need for bus turnaround. Dual QDR-II Static RAMs are high speed synchronous memories supporting two independent double-data-rate (DDR) read and write data ports. This scheme allows simultaneous read and write access for the maximum device throughput - two data items are passed with each read or write. Four data word transfers occur per clock cycle, providing quad-data-rate (QDR) performance on each port. Comparing this with standard SRAM common I/O single data rate (SDR) devices, a four to one increase in data access is achieved at equivalent clock speeds. IDT70P3537/70P3517 Dual QDR-II Static RAM devices, are capable of sustaining full bandwidth on both the input and output buses simultaneously. Using independent buses for read and write data access simplifies design by eliminating the need for bidirectional buses. And all data are in two word bursts, (with addressing capability to the burst level). Devices with QDR-II interfaces include network processor units (NPUs) and field programmable gate arrays (FPGAs). IDT70P3537/70P3517 Dual QDR-II Static RAMs support unidirectional 36-bit read and write interfaces. These data inputs and outputs operate simultaneously, thus eliminating the need for highspeed bus turnarounds (i.e. no dead cycles are present). Access to each port is accomplished using a common 18-bit address bus (17 bits for IDT70P3517). Addresses for reads and writes are latched on rising edges of the K and K input clocks, respectively.The K and K clocks are offset by 90 degrees or half a clock cycle. Each address location is associated with two 36-bit data words that burst sequentially into or out of the device. Since data can be transferred into and out of the device on every rising edge of the K and K clocks, memory bandwidth is maximized while simplifying overall design through the elimination of bus turnaround(s). IDT70P3537/70P3517 Dual QDR-II Static RAMs can support devices in a multi-drop configuration (i.e. multiple devices connected to the same interface). Through this capability, system designers can support compatible devices such as NPUs and FPGAs on the same bus at the same time. Using independent ports for read and write access simplifies design by eliminating the need for bidirectional buses. All buses associated with Dual QDR-II Static RAMs are unidirectional and can be optimized for signal integrity at very high bus speeds. The Dual QDR-II Static RAM has scalable output impedance on its data output bus and echo clocks allowing the user to tune the bus for low noise and high performance. IDT70P3537/70P3517 Dual QDR-II Static RAMs have a single DDR address bus per port with multiplexed read and write addresses. All read addresses are received on the first half of the clock cycle and all write addresses are received on the second half of the clock cycle. The byte write signals are received on both halves of the clock cycle simultaneously with the data they are controlling on the data input bus. The Dual QDR-II Static RAM device has echo clocks, which provide the user with a clock that is precisely timed to the data output 3 and tuned with matching impedance and signal quality. The user can use the echo clock for downstream clocking of the data. For the user, echo clocks eliminate the need to produce alternate clocks with precise timing, positioning, and signal qualities to guarantee data capture. Since the echo clocks are generated by the same source that drives the data output, the relationship to the data is NOT significantly affected by external parameters such as voltage, temperature, and process as would be the case if the clock were generated by an outside source.Thus the echo clocks are guaranteed to be synchronized with the data. All interfaces of Dual QDR-II Static RAMs are HSTL, allowing speeds beyond SRAM devices that use any form of TTL interface. The interface can be scaled to higher voltages (up to 1.9V) to interface with 1.8V systems, if necessary. The device has VDDQ pins and a separate Vref, allowing the user to designate the interface operational voltage independent of the device core voltage of 1.8V VDD. Output impedance control pins allow the user to adjust the drive strength to adapt to a wide range of loads and transmission lines. Clocking The IDT70P3537/3517 has two sets of input clocks for both the input and output, the K, K clocks and the C, C clocks. In addition, the IDT70P3537/3517 has an output “echo” clock pair, CQ and CQ. The K and K clocks are the primary device input clocks. The K clock is used to clock in the control signals (R, W, E[1:0], BW0-3), the read address, and the first word of the data burst (D[35:0]) during a write operation. The K clock is used to clock in the control signals (BW0-3, E[1:0]), write address and the second word of the data burst during a write operation (D[35:0]). In the event that the user disables the C and C clocks, the K and K clocks will also be used to clock the data out of the output register and generate the echo clocks. The K and K, C and C,CQ and CQ, pairs are offset by half a clock cycle from each other. The C and C clocks may be used to clock the data out of the output register during read operations and to generate the echo clocks. C and C must be presented to the memory within the timing tolerances as shown in the AC Electrical Characteristics Table (Page 12). The output data from the IDT70P3537/70P3517 will be closely aligned to the C and C input, through the use of an internal DLL. When C is presented to the IDT70P3537/70P3517 the DLL will have already internally clocked the data to arrive at the device output simultaneously with the arrival of the C clock. The C and second data item of the burst will also correspond. Single Clock Mode The IDT70P3537/70P3517 may be operated with a single clock pair. C and C may be disabled by tying both signals high, forcing the outputs and echo clocks to be controlled instead by the K and K clocks. DLL Operation The DLL in the output structure of the IDT70P3537/70P3517 can be used to closely align the incoming clocks C and C with the output of the data, generating very tight tolerances between the July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM two. The user may disable the DLL by holding DOFF low. With the DLL off, the C and C (or K and K, if C and C are not used) will directly clock the output register of the IDT70P3537/70P3517. With the DLL off, there will be a propagation delay from the time the clock enters the device until the data appears at the output. QDR-II becomes QDRITM with DLL off. First data out is referenced to C instead of C. Echo Clock The echo clocks, CQ and CQ, are generated by the C and C clocks (or K, K if C, C are disabled). The rising edge of C generates the rising edge of CQ, and the falling edge of CQ. The rising edge of C generates the rising edge of CQ and the falling edge of CQ. This scheme improves the correlation of the rising and falling edges of the echo clock and will improve the duty cycle of the individual signals. The echo clock is very closely aligned with the data, guaranteeing that the echo clock will remain closely correlated with the data, within the tolerances designated. Normal QDR-II Read and Write Operations The IDT70P3537/70P3517 Dual QDR-II Static RAM supports QDR-II burst-of-two read/write operations. Read operations are initiated by holding the read port select (R) low, and presenting the read address to the address port during the rising edge of K which will latch the address. Data is delivered after the next rising edge of the next K (t + 1), using C and C as the output timing references; or K and K, if C and C are tied high. The write operation is a standard QDR-II burst-of-two write operation, except the data is not available to be read until the next clock cycle (this is one cycle later than standard QDR-II SRAM). 4 Normal QDR write cycles are initiated by holding the write port select (W) low at K rising edge. Also, the Byte Write inputs (BW0-3), designating which bytes are to be written, need to be held low for both the K and K clocks. On the rising edge of K the first word of the data must also be present on the data input bus D[35:0] observing the designated set up times. Upon the rising edge of K the first word of the burst will be latched into the input register. After K has risen, and the designated hold times observed, the second half of the clock cycle is initiated by presenting the write address to the address bus A[X:0], the BW0-3 inputs for the second data word of the burst, and the second data item of the burst to the data bus D[35:0]. Upon the rising edge of K, the second word of the burst will be latched, along with the designated address. Both the first and second words of the burst will be written into memory as designated by the address and byte write enables. The addresses for the write cycles is provided at the K rising edge, and data is expected at the rising edge of K and K, beginning at the same K that initiated the cycle. Programmable Impedance An external resistor, RQ, must be connected between the ZQ pin on the IDT70P3537/70P3517 and tied to VSS to allow the IDT70P3537/70P3517 to adjust its output drive impedance. The value of RQ must be 5X the value of the intended drive impedance of the IDT70P3537/70P3517. The allowable range of RQ to guarantee impedance matching with a tolerance of +/- 15% is 175 ohms to 350 ohms. The output impedance is adjusted every 1024 clock cycles to correct for drifts in supply voltage and temperature. If the user wishes to drive the output impedance of the IDT70P3537/70P3517 to its lowest value, the ZQ pin may be tied to VDDQ. July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM Pin Definitions Symbol(1) Pin Function D[35:0]X Input Synchronous BW0X, BW1X, BW2X, BW3X Input Synchronous A[17:0] X(2) Input Synchronous Address Inputs. Read addresses are sampled on the rising edge of K clock during active read operations. Write addresses are sampled on the rising edge of K clock during active write operations. These address inputs are multiplxed, so that both a read and write operation can occur on the same clock cycle. These inputs are ignored when the appropriate port is deselected. Q[35:0]X Output Synchronous Data Output signals. These pins drive out the requested data during a Read operation. Valid data is driven out on the rising edge of both the C and C clocks during Read operations or K and K when operating in single clock mode. When the Read port is deselected, Q[35:0] are automatically tri-stated. WX Input Synchronous Write Control Logic, active LOW. Sampled on the rising edge of the positive input clock (K). When asserted active, a write operation in initiated. Deasserting will deselect the Write port. Deselecting the Write port will cause D[35:0] to be ignored. RX Input Synchronous Read Control Logic, active LOW. Sampled on the rising edge of Positive Input Clock (K). When active, a Read operation is initiated. Deasserting will cause the Read port to be deselected. When deselected, the pending access is allowed to complete and the output drivers are automatically tri-stated following the next rising edge of the C clock. (DOFFX = 1). Each read access consists of a burst of two sequential transfers. CX Input Clock Positive Output Clock Input. C is used in conjunction with C to clock out the Read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See application example for further details. CX Input Clock Negative Output Clock Input. C is used in conjunction with C to clock out the Read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See application example for further details. KX Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device. Drives out data through Q[35:0] when in single clock mode. All accesses are initiated on the rising edge of K. KX Input Clock CQX Output Clock CQX Output Clock ZQX Input EP[1:0] Input EX[1:0] Input Syncronous DOFFX Input MRST Description Data input signals, sampled on the rising edge of K and K clocks during valid write operations Byte Write Selects active LOW. Sampled on the rising edge of the K and again on the rising edge of K clocks during write operations. Used to select which byte is written into the device during the current portion of the write operations. Bytes not written remain unaltered. All byte writes are sampled on the same edge as the data. Deselecting a Byte Write Select will cause the corresponding byte of data to be ignored and not written in to the device. BW0 controls D[8:0], BW1 controls D[17:9], BW2 controls D[26:18], and BW3 controls D[35:27]. Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device. Drives out data through Q[35:0] when in single clock mode. Synchronous Echo clock output. The rising edge of CQ is tightly matched to the synchronous data outputs and can be used as a data valid indication. CQ is free running and does not stop when the output data is tri-stated. Synchronous Echo Clock output. The rising edge of CQ is tightly matched to the synchronous data outputs and can be used as a data valid indication. CQ is free running and does not stop wehen the output data is tri-stated. Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus impedance. Q[35:0] output impedance is set to 0.2 x RQ, where RQ is a resistor connected between ZQ and ground. Alternately, this pin can be connected directly to V DDQ, which enables the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected. EP[1:0] are used to program the Port Enable pins E[1:0]. EP[1:0] are programmed by tying the pins high or low on the board. If a customer does not want to use Pins EP[1:0], then these pins should be tied low. Refer to Truth Table III for Port Enable pins. Two Port Enable pins E[1:0] are provided to connect to the two MSB bits on the memory controller in order to cascade up to four IDT70P3537 devices. If a customer does not want to use Pins E[1:0], then these pins should be tied low. Refer to Truth Table III for Port Enable pins. Also refer to Figure 1 showing cascade/multi-drop using port-enable (E[1:0]) pins. E[1:0] are sampled on the rising edge of K for read operations and again on rising edge of K for write operations. DLL Turn Off. When low this input will turn off the DLL inside the device. The AC timings with the DLL turned off will be different from those listed in this data sheet. There will be an increased propagation delay from the incidence of C and C to Q, or K and K to Q as configured. Input Master Reset pin. When held low will reset the device. Asynchronous DEPTH Input TDO Output TCK Input TCK pin for JTAG. TDI Input TDI pin for JTAG. Input TMS pin for JTAG. TMS TRST VDD VSS VDDQX TDO pin for JTAG. Input Reset pin for JTAG. Asynchronous Should be tied to V CC or VSS only, or can be left as a floating pin. INC VREFX Connect to VDDQ for 9Mb. Connect to VSS for 18Mb. Input Reference Reference Voltage input. Static input used to set the reference level for HSTL inputs as well as AC measurement points. Power Supply Power supply inputs to the core of the device. Should be connected to a 1.8V power supply. Ground Ground for the device. Should be connected to ground of the system. Power Supply Power supply for the outputs of the device. Should be connected to a 1.5V power supply for HSTL or scaled to the desired output voltage. 5677 tbl 01 NOTE: 1. "X" = "L" for the Left Port pins and "X" = "R" for the Right Port pins. 2. A[16:0]x for IDT70P3517. 5 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM Truth Table I - Synchronous Port Control(1) D(3,4) K K Stopped R W X X Stopped H Ç H Ç X Ç X Ç X Ç X Ç L Ç X Ç X Ç L Ç EO(2) E1(2) X X X X X X X X F X F X X F X F T T X X X X T T Q(3,4) D(A+0) D(A+1) X C C Stopped X X High - Z Ç High - Z Ç DOUT at C (t+1) Ç DIN at K(t) Read X Ç No operation DOUT at C (t+2) Read Ç DIN at K(t) No operation No operation High - Z Ç X No operation No operation High - Z Ç X X No operation High - Z Ç X X Clock stopped Previous state Clock stopped High - Z Ç OPERATION Q(A+1) Previous state Stopped X X Q(A+0) Write X Ç Write 5677 tbl 03 NOTES: 1. x = "Don’t Care", H = Logic High, L = Logic Low, Ç represents rising edge. 2. T (True) = E and EP have some polarity (device selected) on the rising edge of the appropriate clock. F (False) =E and EP have opposite polarity (device de-selected) on the rising edge of the appropriate clock. See Truth Table III. 3. "A" represents address location latched by the device when operation was initiated. A+0, A+1 represents the internal address sequence in the burst. 4. "t" represents the cycle at which a read/write operation is started. t+1 and t+2 are the first and second clock cycles respectively following clock cycle t. Truth Table II - Write Port Enable Control(2,3) K K BW0(1) BW1(1) BW2(1) BW3(1) Input Input Input Input Input Input H H H H Write function disabled all bytes H H H H Write function disabled all bytes L H H H Write data inputs to Byte 0 Only L H H H Write data inputs to Byte 0 Only H L H H Write data inputs to Byte 1 Only H L H H Write data inputs to Byte 1 Only H H L H Write data inputs to Byte 2 Only H H L H Write data inputs to Byte 2 Only H H H L Write data inputs to Byte 3 Only H H H L Write data inputs to Byte 3 Only L L L L Write data inputs to all Bytes L L L L Write data inputs to all Bytes Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Mode 5677 tbl 03a NOTES: 1. BW0 controls D[8:0], BW1 controls D[17:9], BW2 controls D[26:18], BW3 controls D[35:27]. 2. For this table: W is Low on the rising edge of K; E0 and E1 are true on the rising edge of K. See Truth Tables I and III. Addresses for Writes are qualified on rising edge of K. 3. This table represents a subset of the potential write scenarios based upon BW0 - BW3 inputs and is meant to illustrate basic device functionality. 6 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM Truth Table III - Port Enable Pins(1) Normal Read and Writes Device Selected EP[0] EP[1] E[0] E[1] Bank 0 VSS VSS L L Bank 1 VDD VSS H L Bank 2 VSS VDD L H Bank 3 VDD VDD H H 5677 tbl05 NOTES: 1. EP [1:0] - Port Enable Programming Polarity (see pin description for the entire device). 2. Ex[1:0] - Port Enable (see pin description assigned for each port). Cascade/Multi-Drop using Port Enable (E0 & E1) Pins As shown below in Figure 1 upto four devices can be cascaded using the Port Enable (E0,E1) pins scheme. The port enable pins are subject to the same DC characteristics as the QDR interface. Refer to Pin Definitions table for pin descriptions. This diagram illustrates one port of a QDR-II dual port Figure 1. Multi-drop Cascading using the Chip Enable E[1:0] Pins 7 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM Absolute Maximum Ratings(1,2,3) Symbol Rating Value Unit Symbol CIN CO VDD Supply Voltage on VDD with Respect to GND –0.5 to +2.2 V VDDQ Supply Voltage on VDDQ with Respect to GND –0.5 to VDD V VTERM Voltage on Input, Output and I/O terminals with respect to GND TBIAS Capacitance (TA = +25°C, f = 1.0MHz)(1) Conditions(2) Max. Unit Input Capacitance VIN = 0V 5 pF Output Capacitance VOUT = 0V 7 pF Parameter 5677 tbl 08 –0.3 to VDD+0.3 V Temperature Under Bias –55 to +125 °C TSTG Storage Temperature –65 to +150 °C IOUT Continuous Current into Outputs + 20 NOTE: 1. Tested at characterization and retested after any design or process change that may affect these parameters. 2. VDD = 1.8V, VDDQ = 1.5V mA 5677 tbl 07 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VDDQ must not exceed VDD during normal operation. 3. VTerm(MAX) = minimum of VDD +0.3V and 2.2V. Thermal Resistance Recommended DC Operating and Temperature Conditions Symbol Parameter Min. Typ. Max. Unit VDD Power Supply Voltage 1.7 1.8 1.9 V VDDQ I/O Supply Voltage 1.4 1.5 1.9 V VSS Ground 0 0 0 V VREF Input Reference Voltage 0.68 VDDQ/2 0.95 V VIH Input High Voltage VREF+0.1 – VDDQ+0.3 V Parameter Symbol Typ. Unit VIL Input Low Voltage –0.3 – VREF–0.1 V Junction to Ambient θJA 12.5 °C/W TA Ambient Temperature (1) 0 25 +70 Junction to Case θJC 0.1 °C/W o c 5677 tbl 09 NOTE: 1. During production testing, the case temperature equals the ambient temperature. 5677 tbl 10 NOTE: 1. Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site thermal impedance. TJ = TA + PD x θJA. Recommended Operating Temperature and Supply Voltage Grade Commercial Industrial Ambient Temperature GND VDD 0OC to +70OC 0V 1.8V + 100mV -40OC to +85OC 0V 1.8V + 100mV 5677 tbl06 8 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM DC Electrical Characteristics Over the Operating Temperature and Supply Voltage (VDD = 1.8V ±100mV, VDDQ = 1.4V to 1.9V, TA = 0 to 70°C) Parameter Symbol Test Conditions Min Max Unit Note -10 +10 µA 8 -10 +10 µA 8 - 1636 233MHZ - 1542 mA 1 VDD = Max, IOUT = 0mA (outputs open), Cycle Time > tKHKH Min 250MHZ - 1432 233MHZ - 1351 mA 1 VDD = Max, IOUT = 0mA (outputs open), Cycle Time > tKHKH Min 250MHZ - 1212 IDD2 233MHZ - 1147 mA 1 250MHZ - 1007 ISB Device Deselected IOUT = 0mA (outputs open), f=Max, All Inputs < 0.2V or > VDD - 0.2V WEN=REN=High 233MHZ - 956 mA 2 Input Leakage Current IIL VDD = Max VIN = VSS to VDDQ Output Leakage Current IOL Output Disabled 250MHZ Active Operating Current IDD VDD = Max, IOUT = 0mA (outputs open), Cycle Time > tKHKH Min 2 Port Read IDD1 2 Port Write Standby Current Output High Voltage VOH1 ZQ = 250Ω, IOH = -(VDDQ/2)/(RQ/5) VDDQ/2 -0.12 VDDQ/2 +0.12 V 3,7 Output Low Voltage VOL1 ZQ = 250Ω, IOL = (VDDQ/2)/(RQ/5) VDDQ/2 -0.12 VDDQ/2 +0.12 V 4,7 Output High Voltage VOH2 IOH = -0.1mA VDDQ -0.2 VDDQ V 5 Output Low Voltage VOL2 IOL = 0.1mA VSS 0.2 V 6 Output Impedance Control | IOH | | IOL | VOUT = VDDQ/2 VOUT = VDDQ/2 -(IOHo-15%) (IOLo-15%) -(IOHo+15%) (IOLo+15%) V 3 4 5677 tbl12 NOTES: 1. Operating Current is measured at 100% bus utilization on the active port. 2. Standby Current is only after all pending read and write burst operations are completed. 3. Outputs are impedance-controlled. IOHO = (VDDQ/2)/(RQ/5) = @Vout = VDDQ/2 and is guaranteed by device characterization for 175Ω < ZQ < 350Ω. This parameter is tes at ZQ = 250Ω, which gives a nominal 50Ω output impedance. 4. Outputs are impedance-controlled. IOLO = (VDDQ/2)/(RQ/5) = @Vout = VDDQ/2 and is guaranteed by device characterization for 175Ω < ZQ < 350Ω. This parameter is tes at ZQ = 250Ω, which gives a nominal 50Ω output impedance. 5. This measurement is taken to ensure that the output has the capability of pullling to the V DDQ rail, and is not intended to be used as an impedance measurement point. 6. This measurement is taken to ensure that the output has the capability of pulling to VSS, and is not intended to be used as an impedance measure point. 7. Programmable Impedance Mode. 8. ± 30µA for JTAG input pins. Input Electrical Characteristics Over the Operating Temperature and Supply Voltage (VDD = 1.8V ±100mV, VDDQ = 1.4V to 1.9V, TA = 0 to 70°C) Parameter Symbol Min Max Unit Notes Input High Voltage, DC VIH (DC) VREF +0.1 VDDQ +0.3 V 1,2 Input Low Voltage, DC VIL (DC) -0.3 VREF -0.1 V 1,3 Input High Voltage, AC VIH (AC) VREF +0.2 - V 4,5 Input Low Voltage, AC VIL (AC) - VREF -0.2 V 4,5 5677 tbl 13 NOTES: 1. These are DC test criteria. DC design criteria is VREF + 50mV. The AC VIH/VIL levels are defined separately for measuring timing parameters. 2. VIH (Max) DC = VDDQ +0.3V, VIH (Max) AC = VDDQ +0.5V (pulse width < 20% tKHKH (min)). 3. VIL (MIN) DC = -0.3V, VIL (MIN) AC = -0.5V (pulse width < 20% tKHKH (min)). 4. This condition is for AC function test only, not for AC parameter test. 5. To maintain a valid level, the transitioning edge of the input must: Sustain a constant slew rate from the current AC level through the target AC level, VIL (AC) or VIH (AC) Reach at least the target AC level After the AC target level is reached, continue to maintain at least the target DC level, VIL (DC) or VIH (DC) 9 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM Overshoot Timing Undershoot Timing VIL VSS VSS -0.25V VSS -0.5V 20% tKHKH (MIN) 5677 drw 06 AC Test Loads VREF AC Test Conditions VDDQ/2 Parameter OUTPUT Device Under Test ZQ Z0 = 50 Ω RL = 50 Ω RQ = 250 Ω VDDQ/2 5677 drw 07 Symbol Value Unit Core Power Supply Voltage VDD 1.7-1.9 V Output Power Supply Voltage VDDQ 1.4-1.9 V Input High Level VIH (VDDQ/2) +0.5 V Input Low Level VIL (VDDQ/2) -0.5 V Input Reference Level VREF VDDQ/2 V Input Rise/Fall Time TR/TF 0.3/0.3 ns VDDQ/2 V Output Timing Reference Level 5677 tbl 14 NOTE: 1. Parameters are tested with RQ=250Ω. (VDDQ/2) +0.5V VDDQ/2 (VDDQ/2) -0.5V 10 5677 drw08 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM AC Electrical Characteristics (VDD = 1.8V ±100mV, VDDQ = 1.4V to 1.9V, TA(8) = 0 to 70°C) Symbol Parameter Commercial Com'l & Ind'l 250MHz 233MHz Min. Max. Min. Max. Unit 4.00 6.30 4.30 7.20 ns __ Notes Clock Parameters tKHKH Average clock cycle time (K,K,C,C) tKC var Clock Phase Jitter (K,K,C,C) 0.20 __ 0.20 ns 1,5 tKHKL Clock High Time (K,K,C,C) 1.60 __ 1.80 __ ns 9 tKLKH Clock LOW Time (K,K,C,C) 1.60 __ 1.80 __ ns 9 tKHKH Clock to clock (K→K,C→C) 1.80 __ 2.00 __ ns 10 tKHKH Clock to clock (K→K,C→C) 1.80 __ 2.00 __ ns 10 tKHCH Clock to data clock (K→C,K→C) 0.00 1.80 0.00 2.00 ns tKC lock DLL lock time (K, C) 1024 __ 1024 __ cycles tKC reset K static to DLL reset 30 __ 30 __ ns ns 2 Output Parameters tCHQV C,C HIGH to output valid __ 0.45 __ 0.45 3 ns 3 ns 3 3 tCHQX C,C HIGH to output hold -0.45 __ -0.45 __ tCHCQV C,C HIGH to echo clock valid __ 0.45 __ 0.45 tCHCQX C,C HIGH to echo clock hold -0.45 __ -0.45 __ ns tCQHQV CQ,CQ HIGH to output valid __ 0.30 __ 0.32 ns tCQHQX CQ,CQ HIGH to output hold -0.30 __ -0.32 __ ns tCHQZ C HIGH to output High-Z __ 0.45 __ 0.45 ns 3,4,5 tCHQX1 C HIGH to output Low-Z -0.45 __ -0.45 __ ns 3,4,5 Set-Up Times tAVKH Address valid to K,K rising edge 0.35 __ 0.37 __ ns 6 tIVKH Control inputs valid to K,K rising edge 0.35 __ 0.37 __ ns 7 tDVKH Date-in valid to K, K rising edge 0.35 __ 0.37 __ ns Hold Times tKHAX K,K rising edge to address hold 0.35 __ 0.37 __ ns 6 tKHIX K,K rising edge to control inputs hold 0.35 __ 0.37 __ ns 7 tKHDX K,K rising edge to data-in hold 0.35 __ 0.37 __ ns 4.00 — 4.30 — ns Port-to-Port Delay tCO Clock-to-Clock Offset 6725 tbl15 NOTES: 1. Cycle to cycle period jitter is the variance from clock rising edge to the next expected clock rising edge, as defined per JEDEC Standard No. 65 (EIA/JESD65) page. 2. VDD slew rate must be less than 0.1V DC per 50ns for DLL lock retention. DLL lock time begins once VDD, VDDQ and input clock are stable. 3. If C, C are tied High, K, K become the references for C, C timing parameters. 4. To avoid bus contention, at a given voltage and temperature tCHQX1 is bigger than tCHQZ. The specs as shown do not imply bus contention because tCHQX1 is a MIN parameter that is worst case at 0°C and 1.9V tCHQZ, is a MAX parameter that is worst case at 70°C and 1.7V. 5. This parameter is guaranteed by device characterization, but not production tested. 6. All address inputs must meet the specified setup and hold times for all latching clock edges. 7. Control signals are R, W, BW0, BW1, BW2, BW3,E0, E1. 8. During production testing, the case temperature equals TA. 9. Clock High Time (tKHKL) and Clock Low Time (tKLKH) should be within 40% to 60%of the cycle time (tKHKH). 10. Clock to Clock time (tKHKH) and Clock to Clock time (tKHKH) should be within 45% to 55% of the cycle time (tKHKH). 11 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM Timing Waveform for Alternating Read and Write Operations(1,2) Read 0 Read 2 Write 1 Write 3 Read 4 Write 5 Write 7 NOP 6 NOP 8 NOP 9 Q40 Q41 K tKHKL tKLKH tKHKH tKHKH tKHKH K R tIVKH tKHIX W tAVKH A tKHAX A4 A7 A2 tAVKH tKHAX tAVKH tKHAX BWx(3) B10 B11 B30 B31 B50 B51 B70 B71 D10 D11 D30 D31 D50 D51 D70 D71 D A3 A5 A1 A0 tIVKH tKHIX tDVKH tKHDX Q00(4) Q tKHIX tIVKH tDVKH tKHDX Q01 Q20 Q21 tCHQX1 tCHQX tCHQX tCHQV tKLKH tCQHQV tCHQV tCHQZ tKHKH C tKHKH tKHKL tKHKH C tCHCQV tCQHQX tCQHQV tCHCQX CQ tCHCQV tCQHQV tCQHQX tCHCQX CQ 5677 drw 09 NOTES: 1. Device is selected per E[0] and E[1] as defined in Truth Table II, and MRST = VIH. 2. This waveform represents operation when DLL is ON. 3. To perform a valid write operation, both W and the appropriate BW0-3 must be low. 4. Q00 refers to the output from A0, and Q01 refers to the output from the next internal address following A0. 12 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM Timing Waveform of Back-to-Back Read-Write-Read to Same Address(1,2) NOTES: 1. Device is selected per E[0] and E[1] as defined in Truth Table II, and MRST = VIH. 2. This waveform represents operation when DLL is ON. 3. To perform a valid write operation, both W and the appropriate BW0-3 must be low. 4. ORIG Q00 represents the existing data in the memory. New Q00 represents the data written into the memory in the first cycle of the waveform. 13 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM Timing Waveform for Left Port Write to Right Port Read(1) 0 1 2 3 4 5 6 7 8 9 11 10 12 13 14 tCO(2) KL tKHKH KL WL DINL A1 A0 Address_L D00 D01 D11 D10 KR KR RR Address_R A0 A2 QR Q00 Q01 Q20 Q21 tCHQX1 CR tCHQV CR CQR CQR 5677 drw 11 NOTES: 1. Device is selected per E[0] and E[1] as defined inTruth Table III. MRST = VIH. BW0L, BW1L, BW2L, and BW3L = VIL 2. If tco < specified minimum, data read from right port is not valid until the next KR cycle. If tco > specified minimum, data read from right port is available on the first KR cycle as shown. 14 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM Timing Waveforms for DLL Operation (On/Off)(1,2) Read 0 Read 2 Write 1 Write 3 Read 4 Write 5 Write 7 NOP 6 NOP 8 NOP 9 K tKHKL tKLKH tKHKH tKHKH tKHKH K R tIVKH tKHIX W tKHAX tAVKH A BWX(3) D A0 A4 A3 A5 A1 A2 tAVKH tKHAX tAVKH tKHAX B10 B11 B30 B31 B50 B51 B70 B71 D10 D11 D30 D31 D50 D51 D70 D71 tIVKH A7 tKHIX tIVKH tDVKH tKHDX tDVKH tKHDX tCHQV Case 1: Q DLL OFF (QDRI)(5) Q00(4) tCHQX1 Q01 tCHQX tKHIX Q20 Q21 tCHQZ Q40 Q41 tCHQX tCHQV Case 2: Q DLL ON (QDRII) Q00(4) Q01 Q20 Q40 Q21 Q41 tCHQX1 tCHQX tKLKH tCHQV tCHQV tCHQX tCHQZ tKHKH C tKHKL tKHKH tKHKH C 5677 drw 12 NOTES: 1. Device is selected per E[0] and E[1] as defined in Truth Table II, and MRST = VIH. 2. With DLL OFF (DOFFX < VIL) device behaves as a QDRI device. With DLL ON (DOFFX > VIH) device behaves as a QDR-II device. 3. To perform a valid write operation, both W and the appropriate BW0-3 must be low on the rising edge of K. 4. Q00 refers to the output from A0, and Q01 refers to the output from the next internal address following A0. 5. With DLL off (DOFF = VIL) the propagation delays will be increased and the AC timing parameters will be different values from those specified in this data sheet. 15 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM Master Reset Timing Waveform K (5ns) MRST(1) 5677 drw13 NOTE: 1. MRST must be held LOW for a minimum of (5ns) after power supply is stable. 16 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM IEEE 1149.1 Test Access Port and Boundary SCAN-JTAG This part contains an IEEE standard 1149.1 Compatible Test Access Port (TAP). The package pads are monitored by the Serial Scan circuitry when in test mode. This is to support connectivity testing during manufacturing and system diagnostics. In conformance with IEEE 1149.1, the QDR-II Dual-Port Static RAM contains a TAP controller, Instruction Register, Bypass Register and ID Register. The TAP controller has a standard 16-state machine that resets internally upon power-up. It is possible to use this device without utilizing the TAP. To disable the TAP controller without interfacing with normal operation of the QDR-II Dual-Port Static RAM TCK must be tied to VSS to preclude a mid level input. TMS and TDI are designed so an undriven input will produce a response identical to the application of a logic 1, and may be left unconnected, but they may also be tied to Vdd through a resistor. TDO should be left unconnected. JTAG Block Diagram TAP Controller State Diagram 1 0 Test Logic Reset 0 Run Test Idle 1 Select DR 1 Select IR 1 1 Capture DR 0 1 1 Exit 2 DR 1 Update DR 0 1 1 Exit 1 DR Pause DR Shift IR 0 0 1 Capture IR 0 Shift DR 1 1 0 0 0 Exit 1 IR 0 0 0 Pause IR 1 Exit 2 IR 0 0 1 Update IR 0 1 5677 drw 15 17 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM Identification Register Definitions Instruction Field Value Revision Number (31:28) Description 0x0 IDT Device ID (27:12) 0x355(1) IDT JEDEC ID (11:1) 0x33 ID Register Indicator Bit (Bit 0) Reserved for version number Defines IDT part number (IDT70P3537) Allows unique identification of device vendor as IDT 1 Indicates the presence of an ID register 5677 tbl 16 NOTE: 1. Device ID for IDT70P3517 is 0x356. Scan Register Sizes Register Name Bit Size Instruction (IR) 4 Bypass (BYR) 1 Identification (IDR) Boundary Scan (BSR) 32 Note 1 5677 tbl 17 NOTE: 1. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local IDT sales representative. System Interface Parameters Instruction Code Description EXTEST 0000 Forces contents of the boundary scan cells onto the device outputs (1). Places the boundary scan register (BSR) between TDI and TDO. BYPASS 1111 Places the bypass register (BYR) between TDI and TDO. IDCODE 0010 Loads the ID register (IDR) with the vendor ID code and places the register between TDI and TDO. 0100 Places the bypass register (BYR) between TDI and TDO. Forces all device output drivers to a High-Z state except COLx & INTx outputs. HIGHZ Uses BYR. Forces contents of the boundary scan cells onto the device outputs. Places the bypass register (BYR) between TDI and TDO. CLAMP 0011 SAMPLE/PRELOAD 0001 Places the boundary scan register (BSR) between TDI and TDO. SAMPLE allows data from device inputs (2) to be captured in the boundary scan cells and shifted serially through TDO. PRELOAD allows data to be input serially into the boundary scan cells via the TDI. 0101, 0111, 1000, 1001, 1010, 1011, 1100 Several combinations are reserved. Do not use codes other than those identified above. RESERVED PRIVATE 0110,1110,1101 For internal use only. 5677 tbl 18 NOTES: 1. Device outputs = All device outputs except TDO. 2. Device inputs = All device inputs except TDI, TMS, and TRST. 18 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM JTAG DC Operating Conditions Parameter Symbol Min Typ Max Unit Power Supply Voltage (I/P + O/P) VDD 1.7 1.8 1.9 V Input High Level VIH 1.3 - VDD+0.3 V Input Low Level VIL -0.3 - 0.5 V Output High Voltage (IOH = -1mA) VOH VDD - 0.2 - VDD V Output Low Voltage (IOL = 1mA) VOL VSS - 0.2 V Note 5677 tbl 19 JTAG AC Test Conditions Parameter Symbol Value Unit Input High/Low Level VIH/VIL 1.8/0 V Input Rise/Fall Time TR/TF 1.0/1.0 ns VDD/2 V Input and Output Timing Reference Level Note 1 5677 tbl 20 NOTE: 1. For outputs see AC test loads on page 10. JTAG AC Characteristics Symbol Min Max Unit TCK Cycle Time Parameter tCHCH 100 - ns TCK High Pulse Width tCHCL 40 - ns TCK Low Pulse Width tCLCH 40 - ns TMS Input Setup Time tMVCH 10 - ns TMS Input Hold Time tCHMX 10 - ns TDI Input Setup Time tDVCH 10 - ns TDI Input Hold Time tCHDX 10 - ns Input Setup Time tSVCH 10 - ns Input Hold Time tCHSX 10 - ns Clock Low to Output Valid tCLQV 0 20 ns TRST Low to Reset JTAG tJRST 50 - ns TRST High to TCK HIGH tJRSR 50 - ns Note 5677 tbl 21 JTAG Timing Diagram TCK tCHCL tCHCH tMVCH tCHMX tDVCH tCHDX tSVCH tCHSX tCLCH TMS TDI Outputs tCLQV TDO TRST tJRST tJRSR 5677 drw 16 19 July 16, 2007 Preliminary Datasheet Commercial Temperatue Range 18/9Mb x36 IDT70P3537/70P3517 SYNCHRONOUS Dual QDR-IITM Ordering Information Preliminary Datasheet: Description "PRELIMINARY" datasheets contain descriptions for products that are in early release. Datasheet Document History 7/11/2007: Initial release of Preliminary Datasheet ® CORPORATE HEADQUARTERS 6024 Silver Creek Valley Road San Jose, CA 95138 for SALES: 800-345-7015 or 408-284-8200 fax: 408-284-2775 www.idt.com for Tech Support: 408-284-2794 [email protected] The IDT logo is a registered trademark of Integrated Device Technology, Inc. 20 July 16, 2007