AS7C32098A February 2005 Preliminary Information ® 3.3 V 128K × 16 CMOS SRAM Features • Industrial and commercial temperature • Organization: 131,072 words × 16 bits • Center power and ground pins • High speed - 28.8 mW /max CMOS • Individual byte read/write controls • Easy memory expansion with CE, OE inputs • TTL- and CMOS-compatible, three-state I/O • 44-pin JEDEC standard packages - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time - TSOP 2 • ESD protection ≥ 2000 volts • Latch-up current ≥ 200 mA • Low power consumption: ACTIVE - 650 mW /max @ 10 ns • Low power consumption: STANDBY Logic block diagram Pin arrangement for TSOP 2 I/O buffer WE UB OE LB CE VCC 1024 × 128 × 16 Array (2,097,152) GND Control circuit Column decoder 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A1 A2 A3 A4 CE I/O1 I/O2 I/O3 I/O4 VCC GND I/O5 I/O6 I/O7 I/O8 WE A5 A6 A7 A8 A9 A5 A9 A10 A11 A14 A15 A16 A0 A1 A2 A3 A4 A6 A7 A8 A12 A13 I/O1–I/O8 I/O9–I/O16 Row Decoder A0 A16 A15 A14 OE UB LB I/O16 I/O15 I/O14 I/O13 GND VCC I/O12 I/O11 I/O10 I/O9 NC A13 A12 A11 A10 NC Selection guide –10 –12 –15 –20 Unit Maximum address access time 10 12 15 20 ns Maximum output enable access time 4 5 6 7 ns Industrial 180 160 140 110 mA Commercial 170 150 130 100 mA 8 8 8 8 mA Maximum operating current Maximum CMOS standby current 2/24/05, v. 1.0 Alliance Semiconductor P. 1 of 10 Copyright © Alliance Semiconductor. All rights reserved. AS7C32098A ® Functional description The AS7C32098A is a high-performance CMOS 2,097,152-bit Static Random Access Memory (SRAM) device organized as 131,072 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 4/5/6/7 ns are ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems. When CE is high the device enters standby mode. The device is guaranteed not to exceed 28.8mW power consumption in CMOS standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1–I/O16 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode. The device provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. LB controls the lower bits, I/O1–I/O8, and UB controls the higher bits, I/O9–I/O16. All chip inputs and outputs are TTL- and CMOS-compatible, and operation is for 3.3V (AS7C32098A) supply. The device is available in the JEDEC standard TSOP 2 package. Absolute maximum ratings Symbol Min Max Unit Voltage on VCC relative to GND Parameter Vt1 –0.50 +5.0 V Voltage on any pin relative to GND Vt2 –0.50 VCC +0.50 V Power dissipation PD – 1.5 W Storage temperature (plastic) Tstg –65 +150 °C Ambient temperature with VCC applied Tbias –55 +125 °C DC current into outputs (low) IOUT – ±20 mA Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Truth table CE WE OE LB UB I/O1–I/O8 I/O9–I/O16 Mode H X X X X High Z High Z Standby (ISB, ISB1) L H H X X High Z High Z L X X H H Output disable (ICC) L H DOUT High Z H L High Z DOUT L L DOUT DOUT L L H L L X L H DIN High Z H L High Z DIN L L DIN DIN Read (ICC) Write (ICC) Key: X = Don’t care, L = Low, H = High. 2/24/05,v. 1.0 Alliance Semiconductor P. 2 of 10 AS7C32098A ® Recommended operating conditions Parameter Symbol Supply voltage Min Typical VCC (10/12/15/20) VIH Unit 3.0 3.3 3.6 V 2.0 – VCC + 0.5 V VIL* –0.5 – 0.8 V commercial TA 0 – 70 °C industrial TA –40 – 85 °C Input voltage Ambient operating temperature ** Max * VIL min = –1.0V for pulse width less than 5ns. ** V max = V + 2.0V for pulse width less than 5ns. IH CC DC operating characteristics (over the operating range)1 –10 Test conditions –12 –15 –20 Parameter Symbol Input leakage current |ILI| VCC = Max VIN = GND to VCC – 1 – 1 – 1 – 1 µA Output leakage current |ILO| VCC = Max CE = VIH or OE = VIH or WE = VIL VI/O = GND to VCC – 1 – 1 – 1 – 1 µA Operating power supply current Industrial – 180 – 160 – 140 – 110 mA ICC Commercial - 170 - 150 - 130 - 100 mA – 60 – 60 – 60 – 60 mA – 8 – 8 – 8 – 8 mA VCC = Max CE ≤ VIL, f = fmax IOUT = 0mA VCC = Max CE ≥ VIH, f = Max ISB Standby power supply current ISB1 Min Max Min Max Min Max Min Max Unit VCC = Max CE ≥ VCC – 0.2V, VIN ≥ VCC – 0.2V or VIN ≤ 0.2V, f = 0 Output voltage VOL IOL = 8 mA, VCC = Min – 0.4 – 0.4 – 0.4 – 0.4 V VOH IOH = –4 mA, VCC = Min 2.4 – 2.4 – 2.4 – 2.4 – V Capacitance (f = 1MHz, Ta = 25° C, VCC = NOMINAL)4 Parameter Symbol Signals Test conditions Max Unit Input capacitance CIN A, CE, WE, OE, UB, LB VIN = 0V 6 pF I/O capacitance CI/O I/O VIN = VOUT = 0V 8 pF 2/24/05,v. 1.0 Alliance Semiconductor P. 3 of 10 AS7C32098A ® Read cycle (over the operating range)2,8 –10 Parameter –12 –15 –20 Symbol Min Max Min Max Min Max Min Max Unit Notes Read cycle time tRC 10 – 12 – 15 – 20 – ns Address access time tAA – 10 – 12 – 15 – 20 ns Chip enable (CE) access time tACE – 10 – 12 – 15 – 20 ns Output enable (OE) access time tOE – 4 – 5 – 6 – 7 ns Output hold from address change tOH 3 – 3 – 3 – 3 – ns 4 CE Low to output in low Z tCLZ 3 – 3 – 3 – 3 – ns 3,4 CE High to output in high Z tCHZ – 5 – 6 – 7 – 9 ns 3,4 OE Low to output in low Z tOLZ 0 – 0 – 0 – 0 – ns 3,4 OE High to output in high Z tOHZ – 5 – 6 – 7 – 9 ns 3,4 LB, UB access time tBA – 5 – 6 – 7 – 8 ns LB, UB Low to output in low Z tBLZ 0 – 0 – 0 – 0 – ns LB, UB High to output in high Z tBHZ – 5 – 6 – 7 – 9 ns Power up time tPU 0 – 0 – 0 – 0 – ns 4 Power down time tPD – 10 – 12 – 15 – 20 ns 4 Key to switching waveforms Rising input Falling input Undefined/don’t care Read waveform 1 (address controlled)5,6,8 tRC Address tOH DataOUT 2/24/05,v. 1.0 tAA Previous data valid tOH Data valid Alliance Semiconductor P. 4 of 10 AS7C32098A ® Read waveform 2 (CE, OE, UB, LB controlled)5,7,8 tRC Address tAA OE tOHZ tOE tOH tOLZ CE tACE tCLZ tCHZ LB, UB tBA tBHZ tBLZ DataOUT Data valid Write cycle (over the operating range)9 –10 Parameter Symbol Min –12 –15 –20 Max Min Max Min Max Min Max Unit Note Write cycle time tWC 10 – 12 – 15 – 20 – ns Chip enable (CE) to write end tCW 7 – 8 – 10 – 12 – ns Address setup to write end tAW 7 – 8 – 10 – 12 – ns Address setup time tAS 0 – 0 – 0 – 0 – ns Write pulse width (OE = High) tWP1 7 – 8 – 10 – 12 – ns Write pulse width (OE = Low) tWP2 10 – 12 – 15 – 20 – ns Write recovery time tWR 0 – 0 – 0 – 0 – ns Address hold from end of write tAH 0 – 0 – 0 – 0 – ns Data valid to write end tDW 5 – 6 7 – 9 – ns Data hold time tDH 0 – 0 – 0 – 0 – ns 3,4 Write enable to output in High-Z tWZ 0 5 0 6 0 7 0 9 ns 3,4 Output active from write end tOW 3 – 3 – 3 – 3 – ns 3,4 Byte enable Low to write end tBW 7 – 8 – 10 – 12 – ns 3,4 2/24/05,v. 1.0 Alliance Semiconductor P. 5 of 10 AS7C32098A ® Write waveform 1(WE controlled)9 tWC tAH tWR Address tCW CE tBW LB, UB tAW tAS tWP WE tDW DataIN Data valid tWZ DataOUT tDH tOW Data undefined High Z Write waveform 2 (CE controlled)9 tWC tAH tWR Address tAS CE tCW tAW tBW LB, UB tWP WE tDW DataIN DataOUT 2/24/05,v. 1.0 tCLZ High Z tWZ Data undefined Alliance Semiconductor tDH Data valid tOW High Z P. 6 of 10 AS7C32098A ® Write waveform 3 9 tWC tAH tWR Address tAS tCW CE tAW tBW LB, UB tWP WE tDW DataIN Data valid tDH tWZ DataOUT Data undefined High Z High Z AC test conditions - Output load: see Figure B. Input pulse level: GND to 3.0V. See Figure A. Input rise and fall times: 2 ns. See Figure A. Input and output timing reference levels: 1.5V. 320Ω +3.0V GND +3.3V 90% 90% 10% 10% 2 ns Figure A: Input pulse DOUT 350Ω C10 Thevenin equivalent: 168Ω DOUT +1.728V GND Figure B: 3.3V Output load Notes 1 2 3 4 5 6 7 8 9 10 During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification. For test conditions, see AC Test Conditions, Figures A and B. tCLZ and tCHZ are specified with CL = 5pF as in Figure B. Transition is measured ±500mV from steady-state voltage. This parameter is guaranteed, but not tested. WE is High for read cycle. CE and OE are Low for read cycle. Address valid prior to or coincident with CE transition Low. All read cycle timings are referenced from the last valid address to the first transitioning address. All write cycle timings are referenced from the last valid address to the first transitioning address. C=30pF, except on High Z and Low Z parameters, where C=5pF. 2/24/05,v. 1.0 Alliance Semiconductor P. 7 of 10 AS7C32098A ® Package dimensions c 44 434241403938373635343332313029282726252423 e He 44-pin TSOP 2 1 2 3 4 5 6 7 8 9 101112131415161718 19202122 d l A2 A 0–5° A1 b 2/24/05,v. 1.0 E Alliance Semiconductor A A1 A2 b c d e He E l 44-pin TSOP 2 Min (mm) Max (mm) 1.2 0.05 0.15 0.95 1.05 0.3 0.45 0.21 0.12 18.31 18.52 10.06 10.26 11.68 11.94 0.80 (typical) 0.40 0.60 P. 8 of 10 AS7C32098A ® Ordering Codes Package Temperature TSOP 2 10 ns 12 ns 15 ns 20 ns Commercial AS7C32098A-10TC AS7C32098A-12TC AS7C32098A-15TC AS7C32098A-20TC Industrial AS7C32098A-10TI AS7C32098A-12TI AS7C32098A-15TI AS7C32098A-20TI Note: Add suffix ‘N’ to the above part numbers for Lead Free Parts. (EX: AS7C32098A - 10TCN) Part numbering system AS7C SRAM prefix X 2098A –XX Voltage: Device Access 3 - 3.3V CMOS number time 2/24/05,v. 1.0 T X X Package: T: TSOP 2 Temperature ranges: C: Commercial, 0°C to 70°C I: Industrial, –40°C to 85°C N = Lead Free Parts Alliance Semiconductor P. 9 of 10 AS7C32098A ® ® Alliance Semiconductor Corporation 2575, Augustine Drive, Santa Clara, CA 95054 Tel: 408 - 855 - 4900 Fax: 408 - 855 - 4999 Copyright © Alliance Semiconductor All Rights Reserved Preliminary Information Part Number: AS7C32098A Document Version: v. 1.0 www.alsc.com © Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. 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