CBR1 SERIES CBR2 SERIES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR1 and CBR2 series devices are silicon, single phase, full wave bridge rectifiers designed for general purpose applications. SILICON BRIDGE RECTIFIERS MARKING: FULL PART NUMBER CASE A MAXIMUM RATINGS: (TA=50°C) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage CBR1 CBR2 SYMBOL -010 VRRM 100 VR 100 CBR1 CBR2 -040 400 CBR1 CBR2 -060 600 CBR1 CBR2 -080 800 CBR1 CBR2 -100 UNITS 1000 V 200 400 600 800 1000 V 140 280 420 560 700 V Average Forward Current (CBR1) VR(RMS) IO 1.5 A Average Forward Current (CBR2) IO 2.0 A IFSM IFSM 50 A 60 A TJ, Tstg -65 to +150 °C Peak Forward Surge Current (CBR1) Peak Forward Surge Current (CBR2) Operating and Storage Junction Temperature 70 CBR1 CBR2 -020 200 ELECTRICAL SYMBOL IR VF (CBR1) CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX VR=Rated VRRM 10 IF=1.0A 1.0 VF (CBR2) IF=2.0A 1.1 UNITS μA V V R1 (31-July 2013) CBR1 SERIES CBR2 SERIES SILICON BRIDGE RECTIFIERS CASE A - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (31-July 2013) w w w. c e n t r a l s e m i . c o m