IRLML6402PbF HEXFET® Power MOSFET l l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free Halogen-Free G 1 VDSS = -20V 3 D S RDS(on) = 0.065Ω 2 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Micro3™ Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -20 -3.7 -2.2 -22 1.3 0.8 0.01 11 ± 12 -55 to + 150 V A W W/°C mJ V °C Thermal Resistance Parameter RθJA [email protected] Maximum Junction-to-Ambient www.zpsemi.com Typ. Max. Units 75 100 °C/W 1 of 2 IRLML6402PbF HEXFET® Power MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ΔV(BR)DSS/ΔTJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 ––– ––– ––– -0.40 6.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = -250μA -0.009 ––– V/°C Reference to 25°C, I D = -1mA 0.050 0.065 VGS = -4.5V, ID = -3.7A Ω 0.080 0.135 VGS = -2.5V, ID = -3.1A -0.55 -1.2 V VDS = VGS, ID = -250μA ––– ––– S VDS = -10V, ID = -3.7A ––– -1.0 VDS = -20V, VGS = 0V µA ––– -25 VDS = -20V, VGS = 0V, TJ = 70°C ––– -100 VGS = -12V nA ––– 100 VGS = 12V 8.0 12 ID = -3.7A 1.2 1.8 nC VDS = -10V 2.8 4.2 VGS = -5.0V 350 ––– VDD = -10V 48 ––– ID = -3.7A ns 588 ––– RG = 89Ω 381 ––– RD = 2.7Ω 633 ––– VGS = 0V 145 ––– pF VDS = -10V 110 ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– -1.3 ––– ––– -22 ––– ––– ––– ––– 29 11 -1.2 43 17 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.0A, VGS = 0V TJ = 25°C, IF = -1.0A di/dt = -100A/μs D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Surface mounted on 1" square single layer 1oz. copper FR4 board, steady state. Starting TJ = 25°C, L = 1.65mH RG = 25Ω, IAS = -3.7A. [email protected] www.zpsemi.com 2 of 2