MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP) Complementary Silicon Plastic Power Transistors D2PAK http://onsemi.com for Surface Mount Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • (No Suffix) Electrically the Same as TIP41 and T1P42 Series NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−Free Packages are Available COMPLEMENTARY SILICON POWER TRANSISTORS 6 AMPERES, 100 VOLTS, 65 WATTS MARKING DIAGRAM D2PAK CASE 418B STYLE 1 MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating Symbol Value Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc IC 6.0 10 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 65 0.52 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 W W/_C Unclamped Inductive Load Energy (Note 1) E 62.5 mJ TJ, Tstg −65 to +150 _C Collector−Emitter Voltage Collector Current − Continuous − Peak Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.92 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 50 _C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds TL 260 _C J4xC A Y WW G J4xCG AYWW = Specific Device Code x = 1 or 2 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† MJB41CG D2PAK (Pb−Free) 50 Units / Rail MJB41CT4G D2PAK (Pb−Free) 800 / Tape & Reel NJVMJB41CT4G D2PAK (Pb−Free) 800 / Tape & Reel MJB42CG D2PAK (Pb−Free) 50 Units / Rail MJB42CT4G D2PAK (Pb−Free) 800 / Tape & Reel NJVMJB42CT4G D2PAK (Pb−Free) 800 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W 2. When surface mounted to an FR−4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 4 1 Publication Order Number: MJB41C/D MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 − Vdc Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICEO − 0.7 mAdc Collector Cutoff Current (VCE = 100 Vdc, VEB = 0) ICES − 100 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 50 mAdc hFE 30 15 − 75 − Collector−Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) VCE(sat) − 1.5 Vdc Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.0 Vdc Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 − MHz Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS PD, POWER DISSIPATION (WATTS) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. TA 4.0 TC 80 3.0 60 2.0 40 1.0 20 0 0 TC TA 0 20 40 60 100 80 T, TEMPERATURE (°C) 120 140 160 Figure 1. Power Derating VCC +30 V 2.0 RC 0.7 0.5 SCOPE +11 V -9.0 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% t, TIME (s) μ RB 0 TJ = 25°C VCC = 30 V IC/IB = 10 1.0 25 ms D1 0.3 0.2 tr 0.1 0.07 0.05 -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.03 0.02 0.06 D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA td @ VBE(off) ≈ 5.0 V 0.1 1.0 0.2 2.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn−On Time Figure 2. Switching Time Test Circuit http://onsemi.com 2 4.0 6.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 1.0 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.92°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.2 0.5 2.0 5.0 t, TIME (ms) 1.0 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k Figure 4. Thermal Response 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 0.5ms 5.0 1.0ms 3.0 2.0 1.0 0.5 0.3 0.2 SECONDARY BREAKDOWN LTD BONDING WIRE LTD THERMAL LIMITATION @ TC = 25°C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 0.1 5.0 5.0ms 40 10 20 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 100 Figure 5. Active−Region Safe Operating Area 5.0 300 ts t, TIME (s) μ 1.0 TJ = 25°C TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 200 C, CAPACITANCE (pF) 3.0 2.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.06 tf Cib 100 70 Cob 50 0.1 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 30 0.5 6.0 Figure 6. Turn−Off Time 1.0 2.0 3.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 3 30 50 MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP) hFE, DC CURRENT GAIN 300 200 VCE = 2.0 V TJ = 150°C 100 70 50 25°C 30 20 10 7.0 5.0 0.06 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 -55°C 4.0 1.0 2.0 0.2 0.3 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 0.1 2.0 TJ = 25°C 1.6 1.2 IC = 1.0 A 0.4 0 10 6.0 θV, TEMPERATURE COEFFICIENTS (mV/°C) V, VOLTAGE (VOLTS) 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 4.0 V 0.4 VCE(sat) @ IC/IB = 10 0.2 0.3 0.4 IC, COLLECTOR CURRENT (A) μ 50 100 200 300 IB, BASE CURRENT (mA) 500 0.6 2.0 3.0 4.0 1.0 6.0 1000 *APPLIES FOR IC/IB ≤ hFE/4 +1.5 +1.0 +25°C to +150°C +0.5 *qVC FOR VCE(sat) 0 -55°C to +25°C -0.5 +25°C to +150°C -1.0 -1.5 qVB FOR VBE -55°C to +25°C -2.0 -2.5 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages Figure 11. Temperature Coefficients VCE = 30 V TJ = 150°C 100°C 25°C 100 IC = ICES 10-1 REVERSE 10-3 -0.3 -0.2 -0.1 +2.0 IC, COLLECTOR CURRENT (AMP) R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 0.1 103 10-2 30 +2.5 TJ = 25°C 101 20 Figure 9. Collector Saturation Region 2.0 102 5.0 A 0.8 Figure 8. DC Current Gain 0 0.06 2.5 A FORWARD 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 +0.7 6.0 10M VCE = 30 V 1.0M IC = 10 x ICES IC ≈ ICES 100k 10k IC = 2 x ICES 1.0k 0.1k (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance http://onsemi.com 4 MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP) PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 1 2 A S 3 −T− SEATING PLANE K J G D W H 3 PL 0.13 (0.005) M VARIABLE CONFIGURATION ZONE T B M N R INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR P U L M DIM A B C D E F G H J K L M N P R S V L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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