AD OP193ES-REEL7 Precision, micropower operational amplifier Datasheet

a
FEATURES
Operates from +1.7 V to ⴞ18 V
Low Supply Current: 15 ␮A/Amplifier
Low Offset Voltage: 75 ␮V
Outputs Sink and Source: ⴞ8 mA
No Phase Reversal
Single- or Dual-Supply Operation
High Open-Loop Gain: 600 V/mV
Unity-Gain Stable
Precision, Micropower
Operational Amplifiers
OP193/OP293/OP493*
PIN CONFIGURATIONS
8-Lead SO
(S Suffix)
8-Lead Epoxy DIP
(P Suffix)
NULL
NC
–IN A
+IN A
V+
OP193
OUT A
NULL
V–
NULL 1
8
NC
–IN A 2
7
V+
+IN A 3
6
OUT A
4
5
NULL
V–
APPLICATIONS
Digital Scales
Strain Gages
Portable Medical Equipment
Battery-Powered Instrumentation
Temperature Transducer Amplifier
GENERAL DESCRIPTION
The OP193 family of single-supply operational amplifiers features a combination of high precision, low supply current and
the ability to operate at low voltages. For high performance in
single-supply systems the input and output ranges include
ground, and the outputs swing from the negative rail to within
600 mV of the positive supply. For low voltage operation the
OP193 family can operate down to 1.7 volts or ± 0.85 volts.
The combination of high accuracy and low power operation
make the OP193 family useful for battery-powered equipment.
Its low current drain and low voltage operation allow it to
continue performing long after other amplifiers have ceased
functioning either because of battery drain or headroom.
The OP193 family is specified for single +2 volt through dual
±15 volt operation over the HOT (–40°C to +125°C) temperature
range. They are available in plastic DIPs, plus SOIC surfacemount packages.
OP193
NC = NO CONNECT
8-Lead SO
(S Suffix)
OUT A
–IN A
+IN A
8-Lead Epoxy DIP
(P Suffix)
V+
OP293
V–
OUT B
OUT A 1
–IN A 2
7
OUT B
+IN A 3
6
–IN B
5
+IN B
4
16-Lead Wide Body SOL
(S Suffix)
OUT A 1
14 OUT D
–IN A 2
13 –IN D
12 +IN D
OP493
V+
–IN B
14-Lead Epoxy DIP
(P Suffix)
V+ 4
8
+IN B
V–
+IN A 3
OP293
11 V–
+IN B 5
10 +IN C
–IN B 6
9
–IN C
OUT B 7
8
OUT C
OUT A
–IN A
+IN A
V+
+IN B
–IN B
OUT B
NC
OP493
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
NC
NC = NO CONNECT
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002
OP193/OP293/OP493–SPECIFICATIONS
ELECTRICAL SPECIFICATIONS (@ V = ⴞ15.0 V, T = 25ⴗC unless otherwise noted)
S
A
“E” Grade
Min
Typ Max
Parameter
Symbol
Conditions
INPUT CHARACTERISTICS
Offset Voltage
VOS
OP193
OP193, –40°C ≤ TA ≤ +125°C
OP293
OP293, –40°C ≤ TA ≤ +125°C
OP493
OP493, –40°C ≤ TA ≤ +125°C
VCM = 0 V,
–40°C ≤ TA ≤ +125°C
VCM = 0 V,
–40°C ≤ TA ≤ +125°C
Input Bias Current
IB
Input Offset Current
IOS
Input Voltage Range
Common-Mode Rejection
VCM
CMRR
Large Signal Voltage Gain
AVO
Large Signal Voltage Gain
Large Signal Voltage Gain
Long Term Offset Voltage
Offset Voltage Drift
OUTPUT CHARACTERISTICS
Output Voltage Swing High
Output Voltage Swing Low
Short Circuit Current
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
NOISE PERFORMANCE
Voltage Noise Density
Current Noise Density
Voltage Noise
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
Channel Separation
AVO
AVO
VOS
∆VOS/∆T
VOH
VOL
–14.9 ≤ VCM ≤ +14 V
–14.9 ≤ VCM ≤ +14 V,
–40°C ≤ TA ≤ +125°C
RL = 100 kΩ,
–10 V ≤ VOUT ≤ +10 V
–40°C ≤ TA ≤ +85°C
–40°C ≤ TA ≤ +125°C
RL = 10 kΩ,
–10 V ≤ VOUT ≤ +10 V
–40°C ≤ TA ≤ +85°C
–40°C ≤ TA ≤ +125°C
RL = 2 kΩ,
–10 V ≤ VOUT ≤ +10 V
–40°C ≤ TA ≤ +85°C
–40°C ≤ TA ≤ +125°C
Note 1
Note 2
IL = 1 mA
IL = 1 mA,
–40°C ≤ TA ≤ +125°C
IL = 5 mA
IL = –1 mA
IL = –1 mA,
–40°C ≤ TA ≤ +125°C
IL = –5 mA
–14.9
100
ISY
VS = ± 1.5 V to ± 18 V
VS = ± 1.5 V to ± 18 V,
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C, RL = ∞
VOUT = 0 V, VS = ± 18 V
Unit
75
175
100
200
125
225
150
250
250
350
275
375
µV
µV
µV
µV
µV
µV
15
20
nA
4
+13.5
nA
V
dB
2
+13.5
116
–14.9
97
116
97
94
dB
500
300
500
300
300
V/mV
V/mV
V/mV
150
V/mV
V/mV
V/mV
300
350
200
350
200
150
200
125
200
125
100
0.2
14.1
14.0
13.9
100
150
1.75
14.2
300
14.1
14.1
–14.7 –14.6
14.0
13.9
–14.4
+14.2 –14.1
± 25
ISC
PSRR
“F” Grade
Min
Typ Max
100
120
97
97
V/mV
V/mV
V/mV
µV
µV/°C
14.2
V
14.1
–14.7 –14.6
V
V
V
–14.4
+14.2 –14.1
± 25
V
V
mA
120
dB
94
dB
30
30
µA
en
in
en p-p
f = 1 kHz
f = 1 kHz
0.1 Hz to 10 Hz
65
0.05
3
65
0.05
3
nV/√Hz
pA/√Hz
µV p-p
SR
GBP
RL = 2 kΩ
15
35
15
35
V/ms
kHz
120
120
dB
VOUT = 10 V p-p,
RL = 2 kΩ, f = 1 kHz
NOTES
1
Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 °C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.
Specifications subject to change without notice.
–2–
REV. B
OP193/OP293/OP493
ELECTRICAL SPECIFICATIONS (@ V = 5.0 V, V
S
CM
= 0.1 V, TA = 25ⴗC unless otherwise noted)
“E” Grade
Min Typ Max
Parameter
Symbol
Conditions
INPUT CHARACTERISTICS
Offset Voltage
VOS
OP193
OP193, –40°C ≤ TA ≤ +125°C
OP293
OP293, –40°C ≤ TA ≤ +125°C
OP493
OP493, –40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection
IB
IOS
VCM
CMRR
Large Signal Voltage Gain
AVO
Large Signal Voltage Gain
Long Term Offset Voltage
Offset Voltage Drift
OUTPUT CHARACTERISTICS
Output Voltage Swing High
Output Voltage Swing Low
Short Circuit Current
POWER SUPPLY
Power Supply Rejection Ratio
AVO
VOS
∆VOS/∆T
VOH
VOL
0.1 ≤ VCM ≤ 4 V
0.1 ≤ VCM ≤ 4 V,
–40°C ≤ TA ≤ +125°C
RL = 100 kΩ,
0.03 ≤ VOUT ≤ 4.0 V
–40°C ≤ TA ≤ +85°C
–40°C ≤ TA ≤ +125°C
RL = 10 kΩ,
0.03 ≤ VOUT ≤ 4.0 V
–40°C ≤ TA ≤ +85°C
–40°C ≤ TA ≤ +125°C
Note 1
Note 2
IL = 100 µA
IL = 1 mA
IL = 1 mA,
–40°C ≤ TA ≤ +125°C
IL = 5 mA
IL = –100 µA
IL = –100 µA,
–40°C ≤ TA ≤ +125°C
No Load
IL = –1 mA
IL = –1 mA,
–40°C ≤ TA ≤ +125°C
IL = –5 mA
0
100
75
175
100
200
125
225
15
2
4
116
“F” Grade
Min Typ Max
0
96
150
250
250
350
275
375
20
4
4
116
Unit
µV
µV
µV
µV
µV
µV
nA
nA
V
dB
92
92
dB
200
125
200
125
V/mV
V/mV
V/mV
130
130
75
50
75
50
70
0.2
4.1
4.0
4.0
70
150
1.25
4.4
4.4
4.4
140
300
4.1
4.0
4.0
160
4.4
4.4
V
V
4.4
140
V
V
mV
220
5
280
700
±8
ISC
160
220
5
280
400
500
900
V/mV
V/mV
V/mV
µV
µV/°C
700
±8
400
500
900
mV
mV
mV
mV
mV
mA
ISY
VS = ± 1.7 V to ± 6.0 V
VS = ± 1.5 V to ± 18 V,
–40°C ≤ TA ≤ +125°C
VCM = 2.5 V, RL = ∞
NOISE PERFORMANCE
Voltage Noise Density
Current Noise Density
Voltage Noise
en
in
en p-p
f = 1 kHz
f = 1 kHz
0.1 Hz to 10 Hz
65
0.05
3
65
0.05
3
nV/√Hz
pA/√Hz
µV p-p
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
SR
GBP
RL = 2 kΩ
12
35
12
35
V/ms
kHz
Supply Current/Amplifier
PSRR
100
120
120
dB
14.5
14.5
dB
µA
94
97
90
NOTES
1
Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 °C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.
Specifications subject to change without notice.
REV. B
–3–
OP193/OP293/OP493
ELECTRICAL SPECIFICATIONS (@ V = 3.0 V, V
S
CM
= 0.1 V, TA = 25ⴗC unless otherwise noted)
“E” Grade
Min Typ Max
Parameter
Symbol
Conditions
INPUT CHARACTERISTICS
Offset Voltage
VOS
OP193
OP193, –40°C ≤ TA ≤ +125°C
OP293
OP293, –40°C ≤ TA ≤ +125°C
OP493
OP493, –40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection
Large Signal Voltage Gain
Long Term Offset Voltage
Offset Voltage Drift
OUTPUT CHARACTERISTICS
Output Voltage Swing High
Output Voltage Swing Low
Short Circuit Current
POWER SUPPLY
Power Supply Rejection Ratio
IB
IOS
VCM
CMRR
0.1 ≤ VCM ≤ 2 V
0.1 ≤ VCM ≤ 2 V,
–40°C ≤ TA ≤ +125°C
RL = 100 kΩ, 0.03 ≤ VOUT ≤ 2 V
AVO
–40°C ≤ TA ≤ +85°C
–40°C ≤ TA ≤ +125°C
VOS
Note 1
∆VOS/∆T Note 2
VOH
VOL
PSRR
ISY
Supply Voltage Range
VS
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
Channel Separation
VS = +1.7 V to +6 V,
–40°C ≤ TA ≤ +125°C
VCM = 1.5 V, RL = ∞
–40°C ≤ TA ≤ +125°C
116
90
100
75
0
94
0.2
2.1
1.9
1.9
116
100
150
1.25
2.14
2.1
280
700
±8
300
2.1
1.9
1.9
400
500
900
100
94
+2
150
250
250
350
275
375
20
4
2
87
100
75
100
ISC
Supply Current/Amplifier
NOISE PERFORMANCE
Voltage Noise Density
Current Noise Density
Voltage Noise
IL = 1 mA
IL = 1 mA,
–40°C ≤ TA ≤ +125°C
IL = 5 mA
IL = –1 mA
IL = –1 mA
–40°C ≤ TA ≤ +125°C
IL = –5 mA
0
97
75
175
100
200
125
225
15
2
2
“F” Grade
Min Typ Max
dB
V/mV
V/mV
V/mV
µV
µV/°C
V
2.1
280
V
V
mV
700
±8
+2
µV
µV
µV
µV
µV
µV
nA
nA
V
dB
2.14
400
500
900
97
90
14.5 22
22
± 18
Unit
mV
mV
mA
14.5 22
22
± 18
dB
µA
µA
V
en
in
en p-p
f = 1 kHz
f = 1 kHz
0.1 Hz to 10 Hz
65
0.05
3
65
0.05
3
nV/√Hz
pA/√Hz
µV p-p
SR
GBP
RL = 2 kΩ
10
25
10
25
V/ms
kHz
120
120
dB
VOUT = 10 V p-p,
RL = 2 kΩ, f = 1 kHz
NOTES
1
Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 °C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.
Specifications subject to change without notice.
–4–
REV. B
OP193/OP293/OP493
ELECTRICAL SPECIFICATIONS (@ V = 2.0 V, V
S
CM
= 0.1 V, TA = 25ⴗC unless otherwise noted)
“E” Grade
Min Typ Max
Parameter
Symbol
Conditions
INPUT CHARACTERISTICS
Offset Voltage
VOS
Input Bias Current
Input Offset Current
Input Voltage Range
Large Signal Voltage Gain
IB
IOS
VCM
AVO
OP193
OP193, –40°C ≤ TA ≤ +125°C
OP293
OP293, –40°C ≤ TA ≤ +125°C
OP493
OP493, –40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
Long Term Offset Voltage
VOS
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
Supply Current/Amplifier
ISY
Supply Voltage Range
VS
RL = 100 kΩ, 0.03 ≤ VOUT ≤ 1 V
–40°C ≤ TA ≤ +125°C
Note 1
VS = 1.7 V to 6 V,
–40°C ≤ TA ≤ +125°C
VCM = 1.0 V, RL = ∞
–40°C ≤ TA ≤ +125°C
75
175
100
175
125
225
15
2
1
0
60
“F” Grade
Min Typ Max
150
250
250
350
275
375
20
4
1
0
60
70
70
150
100
94
+2
300
97
90
13.2 20
25
± 18
+2
Unit
µV
µV
µV
µV
µV
µV
nA
nA
V
V/mV
V/mV
µV
13.2 20
25
± 18
dB
µA
µA
V
NOISE PERFORMANCE
Voltage Noise Density
Current Noise Density
Voltage Noise
en
in
en p-p
f = 1 kHz
f = 1 kHz
0.1 Hz to 10 Hz
65
0.05
3
65
0.05
3
nV/√Hz
pA/√Hz
µV p-p
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
SR
GBP
RL = 2 kΩ
10
25
10
25
V/ms
kHz
Specifications subject to change without notice.
REV. B
–5–
OP193/OP293/OP493
ABSOLUTE MAXIMUM RATINGS 1
ORDERING GUIDE
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
Output Short-Circuit Duration to Gnd . . . . . . . . . . Indefinite
Storage Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
OP193/OP293/OP493E, F . . . . . . . . . . . . –40°C to +125°C
Junction Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C
Package Type
θJA3
θJC
Unit
8-Pin Plastic DIP (P)
8-Pin SOIC (S)
14-Pin Plastic DIP (P)
16-Pin SOL (S)
103
158
83
92
43
43
39
27
°C/W
°C/W
°C/W
°C/W
Model
Temperature
Range
Package
Description
Package
Option
OP193ES*
OP193ES-REEL*
OP193ES-REEL7*
OP193FP*
OP193FS
OP193FS-REEL
OP193FS-REEL7
OP293ES
OP293ES-REEL
OP293ES-REEL7
OP293FP*
OP293FS
OP293FS-REEL
OP293FS-REEL7
OP493ES*
OP493ES-REEL*
OP493FP*
OP493FS*
OP493FS-REEL*
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
8-Pin SOIC
8-Pin SOIC
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin SOIC
8-Pin SOIC
8-Pin SOIC
8-Pin SOIC
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin SOIC
8-Pin SOIC
16-Pin SOL
16-Pin SOL
14-Pin Plastic DIP
16-Pin SOL
16-Pin SOL
SO-8
SO-8
SO-8
N-8
SO-8
SO-8
SO-8
SO-8
SO-8
SO-8
N-8
SO-8
SO-8
SO-8
SOL-16
SOL-16
N-14
SOL-16
SOL-16
*Not for new design, obsolete April 2002.
NOTES
1
Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2
For supply voltages less than ± 18 V, the input voltage is limited to the supply
voltage.
3
θJA is specified for the worst case conditions; i.e., θJA is specified for device in socket
for PDIP, and θJA is specified for device soldered in circuit board for SOIC package.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the OP193/OP293/OP493 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions
are recommended to avoid performance degradation or loss of functionality.
–6–
WARNING!
ESD SENSITIVE DEVICE
REV. B
Typical Performance Characteristics–OP193/OP293/OP493
NUMBER OF AMPLIFIERS
160
450 ⴛ PDIPS
120
80
40
0
–75 –60 –45 –30 –15
0
150
VS ⴝ 3V
VCM ⴝ 0.1V
TA ⴝ 25°C
160
450 ⴛ PDIPS
120
80
40
0
–75 –60 –45 –30 –15 0
15 30 45 60 75
OFFSET – ␮V
TPC 1. OP193 Offset Distribution,
VS = ± 15 V
TPC 2. OP193 Offset Distribution,
VS = +3 V
120
450 ⴛ PDIPS
90
60
30
0.2
0.4
0.6
0.8
–1
+125°C
–2
1
2
3
4
COMMON-MODE VOLTAGE – V
0
10
100
1k
FREQUENCY – Hz
TPC 7. CMRR vs. Frequency
REV. B
10k
+PSRR
60
100
1k
FREQUENCY – Hz
10k
TPC 6. PSRR vs. Frequency
40
+SR ⴝ –SR
VS ⴝ ±15V
15
+SR ⴝ –SR
VS ⴝ +5V
10
5
20
80
0
10
5
SHORT CIRCUIT CURRENT – mA
SLEW RATE – V/ms
CMRR – dB
20
VS ⴝ +5V
5V ⱕ VS ⱕ 30V
TA ⴝ 25°C
20
25
40
1.0
40
TA ⴝ 25°C
60
0.8
0.6
+25°C
–3
TPC 5. Input Bias Current vs.
Common-Mode Voltage
100
0.4
–PSRR
100
0
120
80
0.2
–40°C
TCVOS – ␮VⲐ°C
VS ⴝ ±15V
30
120
0
1.0
TPC 4. OP193 TCVOS Distribution,
VS = ± 15 V
60
TPC 3. OP193 TCVOS Distribution,
VS = +3 V
–4
0
0
450 ⴛ PDIPS
90
VS ⫽ 5V
INPUT BIAS CURRENT – nA
NUMBER OF AMPLIFIERS
VS ⴝ ⴞ15V
–40°C ⱕ TA ⱕ +125°C
120
TCVOS – ␮VⲐ°C
1
150
VS ⴝ 3V
VCM ⴝ 0.1V
–40°C ⱕ TA ⱕ +125°C
0
0
15 30 45 60 75
OFFSET – ␮V
PSRR – dB
NUMBER OF AMPLIFIERS
200
VS ⴝ ±15V
TA ⴝ 25°C
NUMBER OF AMPLIFIERS
200
0
–50 –25
+ISC
VS ⴝ ±15V
30
| –ISC |
VS ⴝ ±15V
20
10
+ISC
VS ⴝ +5V
| –ISC |
VS ⴝ +5V
0
25
50
75
100
125
TEMPERATURE – °C
TPC 8. Slew Rate vs. Temperature
–7–
0
–50 –25
0
25
50
75
100
125
TEMPERATURE – °C
TPC 9. Short Circuit Current vs.
Temperature
OP193/OP293/OP493
–0.5
–0.10
VS ⴝ +2V
VCM ⴝ 0.1V
–0.15
–0.20
0
25
–1
20
SUPPLY CURRENT – µA
INPUT BIAS CURRENT – nA
VS ⴝ ±15V
–2
–3
VS ⴝ +2V
VCM ⴝ 0.1V
–4
VS ⴝ ±18V
15
VS ⴝ +2V
VCM ⴝ 1V
10
5
VS ⴝ ±15V
–0.25
–50 –25
0
25
50
75
100
–5
–50
125
–25
TEMPERATURE – °C
25
50
75
100
CURRENT NOISE DENSITY – pAⲐ Hz
100
10
1
10
100
FREQUENCY – Hz
TPC 13. Voltage Noise Density vs.
Frequency
100
10
1
10
100
FREQUENCY – Hz
2000
800
100
125
5V ⱕ VS ⱕ 30V
TA ⴝ 25°C
1000
DELTA
FROM VCC
100
DELTA
FROM VEE
10
1k
TPC 14. Current Noise Density vs.
Frequency
1000
75
1
0.1
2500
50
10000
5V ⱕ VS ⱕ 30V
TA ⴝ 25°C
1
1k
25
TPC 12. Supply Current vs.
Temperature
1000
5V ⱕ VS ⱕ 30V
TA ⴝ 25°C
0
TEMPERATURE – °C
TPC 11. Input Bias Current vs.
Temperature
1000
1
0.1
0
–50 –25
125
TEMPERATURE – °C
TPC 10. Input Offset Current vs.
Temperature
VOLTAGE NOISE DENSITY – nVⲐ Hz
0
DELTA FROM SUPPLY RAIL – mV
INPUT OFFSET CURRENT – nA
0
0.1
1
10
100
1000
LOAD CURRENT – ␮A
10000
TPC 15. Delta Output Swing from
Either Rail vs. Current Load
60
1500
1000
VS ⴝ +5V
0.03V ⱕ VOUT ⱕ 4V
500
0
–50 –25
0
25
50
75
100
TEMPERATURE – °C
TPC 16. Voltage Gain
(RL = 100 kΩ) vs. Temperature
125
VS ⴝ 5V
VS ⴝ ±15V
–10V ⱕ VOUT ⱕ +10V
40
600
400
GAIN – dB
VS ⴝ ±15V
–10V ⱕ VOUT ⱕ +10V
VOLTAGE GAIN – VⲐmV
VOLTAGE GAIN – VⲐmV
TA ⴝ 25°C
VS ⴝ +5V
0.03V ⱕ VOUT ⱕ 4V
0
200
0
–50 –25
0
25
50
75
100
TEMPERATURE – °C
TPC 17. Voltage Gain
(RL = 10 kΩ) vs. Temperature
–8–
20
125
–20
10
100
1k
10k
FREQUENCY – Hz
100k
TPC 18. Closed-Loop Gain vs.
Frequency, VS = 5 V
REV. B
OP193/OP293/OP493
50
OVERSHOOT – %
GAIN – dB
40
20
VS ⴝ 5V TA ⴝ 25°C
AV ⴝ 1
50mV ⱕ VIN ⱕ 150mV
LOADS TO GND
60
+OS ⴝ | –OS |
RL ⴝ 50k⍀
VS ⴝ 5V
PHASE
40
90
40
30
+OS
RL ⴝ ⴥ
45
20
GAIN
0
0
20
PHASE – Degrees
60
TA ⴝ 25°C
VS ⴝ ±15V
GAIN – dB
60
0
+OS ⴝ | –OS |
RL ⴝ 10k⍀
10
–OS
RL ⴝ ⴥ
–20
10
100
1k
10k
FREQUENCY – Hz
0
10
100k
–90
–40
100
10000
TPC 20. Small Signal Overshoot
vs. Capacitive Load
TPC 19. Closed-Loop Gain vs.
Frequency, VS = ± 15 V
1k
10k
100k
FREQUENCY – Hz
1M
TPC 21. Open-Loop, Gain and
Phase vs. Frequency
V+
60
VS ⴝ ±15V
I1
45
20
GAIN
0
0
–20
I2
+INPUT 2k⍀
90
PHASE
PHASE – Degrees
40
GAIN – dB
100
1000
CAPACITIVE LOAD – pF
–45
–20
I3
I4
2k⍀
Q5
Q1
Q2
–INPUT
OP293,
OP493
ONLY
–45
Q6
Q4
Q3
Q7
TO
OUTPUT
STAGE
Q8
D1
–40
100
–90
1k
10k
100k
FREQUENCY – Hz
1M
R1A
R2A
R1B
R2B
I5
TPC 22. Open-Loop, Gain and
Phase vs. Frequency
I6
V–
NULLING
TERMINALS
(OP193 ONLY)
FUNCTIONAL DESCRIPTION
Figure 1. OP193/OP293/OP493 Equivalent Input Circuit
The OP193 family of operational amplifiers are single-supply,
micropower, precision amplifiers whose input and output ranges
both include ground. Input offset voltage (VOS) is only 75 µV
maximum, while the output will deliver ± 5 mA to a load. Supply current is only 17 µA.
V+
Q4
A simplified schematic of the input stage is shown in Figure 1.
Input transistors Q1 and Q2 are PNP devices, which permit the
inputs to operate down to ground potential. The input transistors have resistors in series with the base terminals to protect the
junctions from over voltage conditions. The second stage is an
NPN cascode which is buffered by an emitter follower before
driving the final PNP gain stage.
The OP193 includes connections to taps on the input load
resistors, which can be used to null the input offset voltage, VOS.
The OP293 and OP493 have two additional transistors, Q7 and
Q8. The behavior of these transistors is discussed in the Output
Phase Reversal section of this data sheet.
The output stage, shown in Figure 2, is a noninverting NPN
“totem-pole” configuration. Current is sourced to the load by
emitter follower Q1, while Q2 provides current sink capability.
When Q2 saturates, the output is pulled to within 5 mV of
ground without an external pull-down resistor. The totem-pole
output stage will supply a minimum of 5 mA to an external
load, even when operating from a single 3.0 V power supply.
REV. B
FROM
INPUT
STAGE
Q1
Q5
OUTPUT
Q3
Q2
I3
I2
I1
V–
Figure 2. OP193/OP293/OP493 Equivalent Output Circuit
By operating as an emitter follower, Q1 offers a high impedance
load to the final PNP collector of the input stage. Base drive to
Q2 is derived by monitoring Q1’s collector current. Transistor
Q5 tracks the collector current of Q1. When Q1 is on, Q5 keeps
Q4 off, and current source I1 keeps Q2 turned off. When Q1 is
driven to cutoff (i.e., the output must move toward V–), Q5
allows Q4 to turn on. Q4’s collector current then provides the
base drive for Q3 and Q2, and the output low voltage swing is
set by Q2’s VCE,SAT which is about 5 mV.
–9–
OP193/OP293/OP493
Driving Capacitive Loads
OP193 family amplifiers are unconditionally stable with capacitive
loads less than 200 pF. However, the small signal, unity-gain
overshoot will improve if a resistive load is added. For example,
transient overshoot is 20% when driving a 1000 pF/ 10 kΩ load.
When driving large capacitive loads in unity-gain configurations,
an in-the-loop compensation technique is recommended as
illustrated in Figure 6.
Input Overvoltage Protection
weight, and high energy density relative to older primary cells.
Most lithium cells have a nominal output voltage of 3 V and are
noted for a flat discharge characteristic. The low supply voltage
requirement of the OP193, combined with the flat discharge
characteristic of the lithium cell, indicates that the OP193 can
be operated over the entire useful life of the cell. Figure 3 shows
the typical discharge characteristic of a 1 AH lithium cell powering the OP193, OP293, and OP493, with each amplifier, in
turn, driving 2.1 Volts into a 100 kΩ load.
As previously mentioned, the OP193 family of op amps use a
PNP input stage with protection resistors in series with the
inverting and noninverting inputs. The high breakdown of the
PNP transistors, coupled with the protection resistors, provides
a large amount of input protection from over voltage conditions.
The inputs can therefore be taken 20 V beyond either supply
without damaging the amplifier.
LITHIUM SULPHUR DIOXIDE
CELL VOLTAGE – V
4
Output Phase Reversal—OP193
The OP193’s input PNP collector-base junction can be forwardbiased if the inputs are brought more than one diode drop (0.7 V)
below ground. When this happens to the noninverting input, Q4
of the cascode stage turns on and the output goes high. If the
positive input signal can go below ground, phase reversal can be
prevented by clamping the input to the negative supply (i.e.,
GND) with a diode. The reverse leakage of the diode will, of
course, add to the input bias current of the amplifier. If input bias
current is not critical, a 1N914 will add less than 10 nA of leakage. However, its leakage current will double for every 10°C
increase in ambient temperature. For critical applications, the
collector-base junction of a 2N3906 transistor will add only about
10 pA of additional bias current. To limit the current through the
diode under fault conditions, a 1 kΩ resistor is recommended in
series with the input. (The OP193’s internal current limiting
resistors will not protect the external diode.)
Output Phase Reversal—OP293 and OP493
The OP293 and OP493 include lateral PNP transistors Q7 and
Q8 to protect against phase reversal. If an input is brought more
than one diode drop (≈0.7 V) below ground, Q7 and Q8 combine to level shift the entire cascode stage, including the bias to
Q3 and Q4, simultaneously. In this case Q4 will not saturate
and the output remains low.
3
2
OP493
OP193
OP293
1
0
0
1000
2000
3000
4000
5000
6000
7000
HOURS
Figure 3. Lithium Sulfur Dioxide Cell Discharge Characteristic with OP193 Family and 100 kΩ Loads
Input Offset Voltage Nulling
The OP193 provides two offset nulling terminals that can be
used to adjust the OP193’s internal VOS. In general, operational
amplifier terminals should never be used to adjust system offset
voltages. The offset null circuit of Figure 4 provides about
± 7 mV of offset adjustment range. A 100 kΩ resistor placed in
series with the wiper arm of the offset null potentiometer, as
shown in Figure 5, reduces the offset adjustment range to 400 µV
and is recommended for applications requiring high null resolution. Offset nulling does not adversely affect TCVOS performance,
providing that the trimming potentiometer temperature coefficient does not exceed ± 100 ppm/°C.
The OP293 and OP493 do not exhibit output phase reversal for
inputs up to –5 V below V– at +25°C. The phase reversal limit
at +125°C is about –3 V. If the inputs can be driven below these
levels, an external clamp diode, as discussed in the previous
section, should be added.
V+
7
2
OP193
Battery-Powered Applications
OP193 series op amps can be operated on a minimum supply
voltage of 1.7 V, and draw only 13 µA of supply current per
amplifier from a 2.0 V supply. In many battery-powered circuits,
OP193 devices can be continuously operated for thousands of
hours before requiring battery replacement, thus reducing
equipment downtime and operating cost.
6
4
3
5
1
100k⍀
V–
Figure 4. Offset Nulling Circuit
High performance portable equipment and instruments frequently use lithium cells because of their long shelf life, light
–10–
REV. B
OP193/OP293/OP493
V+
R1
240k⍀
7
2
OP193
V+
(2.5V TO 36V)
R2
1.5M⍀
C1
1000pF
6
7
2
OP193
4
3
5
6
VOUT
(1.23V @ 25°C)
5
3
1
4
100k⍀
100k⍀
1
V–
Q2
Figure 5. High Resolution Offset Nulling Circuit
3
MAT-01AH
Q1
7
2
6
VBE2
5
VBE1
A Micropower False-Ground Generator
Some single-supply circuits work best when inputs are biased
above ground, typically at 1/2 of the supply voltage. In these
cases a false ground can be created by using a voltage divider
buffered by an amplifier. One such circuit is shown in Figure 6.
This circuit will generate a false-ground reference at 1/2 of the
supply voltage, while drawing only about 27 µA from a 5 V supply.
The circuit includes compensation to allow for a 1 µF bypass
capacitor at the false-ground output. The benefit of a large
capacitor is that not only does the false ground present a very low
dc resistance to the load, but its ac impedance is low as well. The
OP193 can both sink and source more than 5 mA, which improves
recovery time from transients in the load current.
5V OR 12V
10k⍀
0.022␮F
240k⍀
2
7
100⍀
OP193
3
240k⍀
2.5V OR 6V
6
4
1␮F
1␮F
V1
R3 68k⍀
⌬VBE
R4
130k⍀
R5 20k⍀
OUTPUT
ADJUST
Figure 7. A Battery-Powered Voltage Reference
A Single-Supply Current Monitor
Current monitoring essentially consists of amplifying the voltage
drop across a resistor placed in series with the current to be
measured. The difficulty is that only small voltage drops can be
tolerated, and with low precision op amps this greatly limits the
overall resolution. The single-supply current monitor of Figure
8 has a resolution of 10 µA and is capable of monitoring 30 mA
of current. This range can be adjusted by changing the current
sense resistor R1. When measuring total system current, it may
be necessary to include the supply current of the current monitor, which bypasses the current sense resistor, in the final result.
This current can be measured and calibrated (together with the
residual offset) by adjustment of the offset trim potentiometer,
R2. This produces a deliberate temperature dependent offset.
However, the supply current of the OP193 is also proportional
to temperature, and the two effects tend to track. Current in R4
and R5, which also bypasses R1, can be adjusted via a gain trim.
Figure 6. A Micropower False-Ground Generator
V+
A Battery-Powered Voltage Reference
The circuit of Figure 7 is a battery-powered voltage reference
that draws only 17 µA of supply current. At this level, two AA
alkaline cells can power this reference for more than 18 months.
At an output voltage of 1.23 V @ 25°C, drift of the reference is
only 5.5 µV/°C over the industrial temperature range. Load
regulation is 85 µV/mA with line regulation at 120 µV/V.
TO CIRCUIT
UNDER TEST
OP193
ITEST
6
4
2
Design of the reference is based on the Brokaw bandgap core
technique. Scaling of resistors R1 and R2 produces unequal
currents in Q1 and Q2. The resulting ∆VBE across R3 creates a
temperature-proportional voltage (PTAT) which, in turn, produces a larger temperature-proportional voltage across R4 and
R5, V1. The temperature coefficient of V1 cancels (first order)
the complementary to absolute temperature (CTAT) coefficient
of VBE1. When adjusted to 1.23 V @ 25°C, output voltage
tempco is at a minimum. Bandgap references can have start-up
problems. With no current in R1 and R2, the OP193 is beyond
its positive input range limit and has an undefined output state.
Shorting Pin 5 (an offset adjust pin) to ground forces the output
high under these circumstances and ensures reliable startup
without significantly degrading the OP193’s offset drift.
REV. B
7
3
5
VOUT =
100mV/mA(ITEST)
1
R2
100k⍀
R1
1⍀
R5
100⍀
R2
9.9k⍀
R3
100k⍀
Figure 8. Single-Supply Current Monitor
–11–
OP193/OP293/OP493
A Single-Supply Instrumentation Amplifier
R1
20k⍀
Designing a true single-supply instrumentation amplifier with
zero-input and zero-output operation requires special care.
The traditional configuration, shown in Figure 9, depends upon
amplifier A1’s output being at 0 V when the applied commonmode input voltage is at 0 V. Any error at the output is multiplied
by the gain of A2. In addition, current flows through resistor R3
as A2’s output voltage increases. A1’s output must remain at 0 V
while sinking the current through R3, or a gain error will result.
With a maximum output voltage of 4 V, the current through R3
is only 2 µA, but this will still produce an appreciable error.
R1
20k⍀
R2
1.98M⍀
5V
R3
20k⍀
V+
A1
1/2 OP293
–IN
V–
R4
1.98M⍀
5V
10k⍀
5V
Q2
Q1
V+
A2
1/2 OP293
VN2222
R2
1.98M⍀
+IN
VOUT
V–
5V
R3
20k⍀
V+
A1
1/2 OP293
–IN
V–
Figure 10. An Improved Single-Supply, 0 VIN, 0 VOUT
Instrumentation Amplifier
R4
1.98M⍀
5V
ISINK
A Low-Power, Temperature to 4–20 mA Transmitter
V+
A2
1/2 OP293
+IN
VOUT
V–
Figure 9. A Conventional Instrumentation Amplifier
One solution to this problem is to use a pull-down resistor. For
example, if R3 = 20 kΩ, then the pull-down resistor must be
less than 400 Ω. However, the pull-down resistor appears as a
fixed load when a common-mode voltage is applied. With a 4 V
common-mode voltage, the additional load current will be 10 mA,
which is unacceptable in a low power application.
Figure 10 shows a better solution. A1’s sink current is provided
by a pair of N-channel FET transistors, configured as a current
mirror. With the values shown, sink current of Q2 is about
340 µA. Thus, with a common-mode voltage of 4 V, the additional load current is limited to 340 µA versus 10 mA with a
400 Ω resistor.
A simple temperature to 4–20 mA transmitter is shown in Figure 11. After calibration, this transmitter is accurate to ± 0.5°C
over the –50°C to +150°C temperature range. The transmitter
operates from 8 V to 40 V with supply rejection better than
3 ppm/V. One half of the OP293 is used to buffer the VTEMP
pin, while the other half regulates the output current to satisfy
the current summation at its noninverting input:
I OUT +
(
VTEMP × R6 + R7
R2 × R10
) −V
SET
 R2 + R6 + R7 


 R2 × R10 
The change in output current with temperature is the derivative
of the transfer function:
∆VTEMP
∆I OUT
∆T
=
(
R6 + R7
∆T
R2 × R10
)
1N4002
R4
20k⍀
REF-43BZ
2
VI N 2
VOUT 6
VTEMP 3
GND 4
8
1/2 OP293
3
R1 10k⍀
4
1
VTEMP
R3
100k⍀
R2
1k⍀
R5
5k⍀
R6
3k⍀
R7
5k⍀
6
VSET
ZERO
TRIM
V+
8V TO 40V
SPAN TRIM
1/2 OP293
5
R8
1k⍀
7
2N1711
R9
100k⍀
ALL RESISTORS 1/4W, 5% UNLESS OTHERWISE NOTED
R10
100⍀
1%, 1/2 W
IOUT
RLOAD
Figure 11. Temperature to 4–20 mA Transmitter
–12–
REV. B
OP193/OP293/OP493
From the formulas, it can be seen that if the span trim is
adjusted before the zero trim, the two trims are not interactive,
which greatly simplifies the calibration procedure.
Calibration of the transmitter is simple. First, the slope of the
output current versus temperature is calibrated by adjusting the
span trim, R7. A couple of iterations may be required to be sure
the slope is correct.
C1
75nF
R1
200k⍀
5V
R5
200k⍀
5V
2
VCONTROL
8
A1
1/2 OP293
3
1
6
A2
1/2 OP293
4
R2
200k⍀
Once the span trim has been completed, the zero trim can be made.
Remember that adjusting the zero trim will not affect the gain.
R3
100k⍀
7
SQUARE
OUT
5
R4
200k⍀
TRIANGLE
OUT
R7
200k⍀
R6
200k⍀
The zero trim can be set at any known temperature by adjusting
R5 until the output current equals:
R8
200k⍀
5V
I OUT =


∆I FS

 (TAMBIENT − TMIN ) + 4 mA
 ∆TOPERATING 
CD4066
1 IN/OUT
Table I shows the values of R6 required for various temperature
ranges.
R6
0°C to 70°C
–40°C to +85°C
–55°C to +150°C
10 kΩ
6.2 kΩ
3 kΩ
f OUT = VCONTROL V × 10 Hz / V
3 OUT/IN
S2
4 IN/OUT
5 CONT
CONT 12
IN/OUT 11
S3
6 CONT
OUT/IN
10
OUT/IN
9
IN/OUT
8
5V
S4
7
VSS
Figure 12. Micropower Voltage Controlled Oscillator
A Micropower, Single-Supply Quad Voltage Output 8-Bit DAC
The circuit of Figure 13 uses the DAC8408 CMOS quad 8-bit
DAC and the OP493 to form a single-supply quad voltage output DAC with a supply drain of only 140 µA. The DAC8408 is
used in the voltage switching mode and each DAC has an output resistance (≈10 kΩ) independent of the digital input code.
The output amplifiers act as buffers to avoid loading the DACs.
The 100 kΩ resistors ensure that the OP493 outputs will swing
to within 1/2 LSB of ground, i.e.:
but this can easily be changed by varying C1. The circuit operates well up to 500 Hz.
1
2
REV. B
5V
CONT 13
2 OUT/IN
A Micropower Voltage Controlled Oscillator
An OP293 in combination with an inexpensive quad CMOS
analog switch forms the precision VCO of Figure 12. This circuit provides triangle and square wave outputs and draws only
50 µA from a single 5 V supply. A1 acts as an integrator; S1
switches the charging current symmetrically to yield positive and
negative ramps. The integrator is bounded by A2 which acts as
a Schmitt trigger with a precise hysteresis of 1.67 volts, set by
resistors R5, R6, and R7, and associated CMOS switches. The
resulting output of A1 is a triangle wave with upper and lower
levels of 3.33 and 1.67 volts. The output of A2 is a square wave
with almost rail-to-rail swing. With the components shown,
frequency of operation is given by the equation:
14
S1
Table I. R6 Values vs. Temperature
Temp Range
VDD
–13–
×
1.23 V
256
= 3 mV
OP193/OP293/OP493
A Single-Supply Micropower Quad Programmable-Gain
Amplifier
5V
5V
3.6k⍀
4
5V
AD589
1.23V
1
2
VDD
4
IOUT1A
DAC A VREFA
1/4
DAC8408
2
3
A
1/4 OP493
VOUTA
1
11
R1
100k⍀
=
256
n
6
DAC B VREFB
1/4
DAC8408
6 IOUT1B
B
1/4 OP493
8
7
5
VOUTB
where n equals the decimal equivalent of the 8-bit digital code
present at the DAC.
R2
100k⍀
If the digital code present at the DAC consists of all zeros, the
feedback loop will be open causing the op amp to saturate. The
10 MΩ resistors placed in parallel with the DAC feedback loop
eliminates this problem with a very small reduction in gain
accuracy. The 2.5 V reference biases the amplifiers to the center
of the linear region providing maximum output swing.
13
DAC C VREFC
1/4
DAC8408
C
1/4 OP493
27
24 IOUT2C/2D
23 IOUT1D
VOUT
VIN
5 IOUT2A/2B
25 IOUT1C
The combination of the quad OP493 and the DAC8408 quad
8-bit CMOS DAC creates a quad programmable-gain amplifier
with a quiescent supply drain of only 140 µA (Figure 14). The
digital code present at the DAC, which is easily set by a microprocessor, determines the ratio between the fixed DAC feedback
resistor and the resistance that the DAC feedback ladder presents to the op amp feedback loop. The gain of each amplifier is:
14
12
VOUTC
R3
100k⍀
9
DAC D V
REFD
1/4
DAC8408
D
1/4 OP493
21
10
8
VOUTD
R4
100k⍀
OP493
DAC DATA BUS
PINS 9(LSB)–16(MSB)
A/B
17
18
R/W
DAC8408ET
DS1
19
DIGITAL
CONTROL
SIGNALS
20
DS2
DGND
28
Figure 13. Micropower Single-Supply Quad VoltageOutput 8-Bit DAC
–14–
REV. B
OP193/OP293/OP493
VDD
C1
0.1␮F
3
VINA
1
5V
RFBA
4
DAC A
1/4
DAC8408
VREFA
2
IOUT1A
4
R1
10M⍀
2
A
1/4 OP493
1
VOUTA
3
C2
0.1␮F
7
VI N B
IOUT2A/2B
5
VREFB
8
IOUT1B
6
11
RFBB
DAC B
1/4
DAC8408
R2
10M⍀
6
5
C3
0.1␮F
26
VI N C
VI N D
22
7
C
1/4 OP493
8
D
1/4 OP493
14
VOUTB
RFBC
VREFC
27
IOUT1C
25
DAC C
1/4
DAC8408
C4
0.1␮F
B
1/4 OP493
RFBD
DAC D
1/4
DAC8408
R3
10M⍀
9
VOUTC
10
IOUT2C/2D
24
VREFD
21
R4
10M⍀
IOUT1D
23
13
12
VOUTD
DAC DATA BUS
PINS 9(LSB)–16(MSB)
OP493
17
DIGITAL
CONTROL
SIGNALS
18
19
20
A/B
R/W
2.5V
REFERENCE
VOLTAGE
DAC8408ET
DS1
DS2
DGND
28
Figure 14. Single-Supply Micropower Quad Programmable-Gain Amplifier
REV. B
–15–
OP193/OP293/OP493
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8
5
8
1
0.2440 (6.20)
0.2284 (5.80)
4
1
0.0196 (0.50)
x 45°
0.0099 (0.25)
0.0192 (0.49)
0.0138 (0.35)
0.0098 (0.25)
0.0075 (0.19)
8°
0°
0.100
(2.54)
BSC
0.070 (1.77)
0.045 (1.15)
0.015 (0.381)
0.008 (0.204)
SEATING
PLANE
16-Lead Wide Body SOL
(S Suffix)
14-Lead Epoxy DIP
(P Suffix)
8
0.280 (7.11)
0.240 (6.10)
PIN 1
1
9
16
0.2992 (7.60)
0.2914 (7.40)
7
0.325 (8.25)
0.300 (7.62)
0.795 (20.19)
0.725 (18.42)
0.060 (1.52)
0.015 (0.38)
0.210
(5.33)
MAX
0.130
(3.30)
MIN
0.160 (4.06)
0.115 (2.93)
0.022 (0.558)
0.014 (0.356)
0.195 (4.95)
0.115 (2.93)
0.130
(3.30)
MIN
0.160 (4.06)
0.115 (2.93)
0.0500 (1.27)
0.0160 (0.41)
0.022 (0.558)
0.014 (0.356)
14
0.325 (8.25)
0.300 (7.62)
0.060 (1.52)
0.015 (0.38)
0.210
(5.33)
MAX
0.0688 (1.75)
0.0532 (1.35)
0.0500
(1.27)
BSC
4
0.430 (10.92)
0.348 (8.84)
0.1968 (5.00)
0.1890 (4.80)
0.0098 (0.25)
0.0040 (0.10)
0.280 (7.11)
0.240 (6.10)
PIN 1
0.1574 (4.00)
0.1497 (3.80)
PIN 1
5
C00295–0–1/02(B)
8-Lead Epoxy DIP
(P Suffix)
8-Lead SO
(S Suffix)
0.100
(2.54)
BSC
0.070 (1.77)
0.045 (1.15)
PIN 1
8
1
0.195 (4.95)
0.115 (2.93)
0.015 (0.381)
0.008 (0.204)
0.4133 (10.50)
0.3977 (10.00)
0.4193 (10.65)
0.3937 (10.00)
0.1043 (2.65)
0.0926 (2.35)
0.0291 (0.74)
x 45°
0.0098 (0.25)
SEATING
PLANE
0.0118 (0.30)
0.0040 (0.10)
0.0500 (1.27)
BSC
0.0192 (0.49)
0.0138 (0.35)
0.0125 (0.32)
0.0091 (0.23)
8°
0°
0.0500 (1.27)
0.0157 (0.40)
Revision History
Page
Data Sheet changed from REV. A to REV. B.
Deletion of WAFER TEST LIMITS Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Deletion of DICE CHARACTERISTICS Images . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Edits to ORDERING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
–16–
REV. B
PRINTED IN U.S.A.
Location