APT45M100J 1000V, 45A, 0.18Ω Max N-Channel MOSFET S S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. D G SO 2 T- 27 "UL Recognized" file # E145592 ISOTOP ® D APT45M100J Single die MOSFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS(on) • Buck converter • Ultra low Crss for improved noise immunity • Two switch forward (asymmetrical bridge) • Low gate charge • Single switch forward • Avalanche energy rated • Flyback • RoHS compliant • Inverters Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 45 Continuous Drain Current @ TC = 100°C 28 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 4075 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 33 A 1 260 Thermal and Mechanical Characteristics Min Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 960 RθJC Junction to Case Thermal Resistance 0.13 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) WT Torque Package Weight -55 150 V 2500 1.03 oz 29.2 g 10 in·lbf 1.1 N·m Terminals and Mounting Screws. MicrosemiWebsite-http://www.microsemi.com °C 5-2009 TJ,TSTG °C/W 0.11 Rev B Characteristic 050-8089 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter VBR(DSS) Drain-Source Breakdown Voltage ΔVBR(DSS)/ΔTJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ΔVGS(th)/ΔTJ IGSS Gate-Source Leakage Current Dynamic Characteristics Symbol VDS = 1000V VGS = 0V Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Typ Max 1.15 0.16 4 -10 0.18 5 TJ = 25°C 100 500 ±100 TJ = 125°C VGS = ±30V Unit V V/°C Ω V mV/°C µA nA TJ = 25°C unless otherwise specified Parameter gfs 3 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Min 1000 VGS = 10V, ID = 33A 3 IDSS Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA APT45M100J Min Test Conditions VDS = 50V, ID = 33A VGS = 0V, VDS = 25V f = 1MHz Co(cr) 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Typ 75 18500 245 1555 Max Unit S pF 635 VGS = 0V, VDS = 0V to 667V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf Current Rise Time Turn-Off Delay Time 325 570 100 270 85 75 285 70 VGS = 0 to 10V, ID = 33A, VDS = 500V Resistive Switching VDD = 667V, ID = 33A RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge dv/dt Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min Typ D Max Unit 45 A G 260 S ISD = 33A, TJ = 25°C, VGS = 0V ISD = 33A 3 diSD/dt = 100A/µs, TJ = 25°C ISD ≤ 33A, di/dt ≤1000A/µs, VDD = 667V, TJ = 125°C 1.0 1300 47 V ns µC 10 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 7.48mH, RG = 2.2Ω, IAS = 33A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 050-8089 Rev B 5-2009 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -5.37E-7/VDS^2 + 9.48E-8/VDS + 1.83E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT45M100J 200 70 V 180 GS = 10V T = 125°C J ID, DRIAN CURRENT (A) 160 ID, DRAIN CURRENT (A) 60 TJ = -55°C 140 120 100 TJ = 25°C 80 60 40 TJ = 125°C 20 0 V 40 30 5V 20 10 TJ = 150°C 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 4.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 250 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE VGS = 10V @ 33A 2.5 ID, DRAIN CURRENT (A) 200 2.0 1.5 1.0 150 TJ = -55°C TJ = 25°C 100 TJ = 125°C 50 0.5 0 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 90 30,000 80 10,000 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics Ciss 70 TJ = -55°C C, CAPACITANCE (pF) gfs, TRANSCONDUCTANCE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 3.0 = 6, 7, 8 & 9V GS 50 60 TJ = 25°C 50 TJ = 125°C 40 30 1000 Coss 100 20 Crss 10 10 20 30 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 10 40 200 400 600 800 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 16 250 12 VDS = 200V 10 VDS = 500V 8 6 VDS = 800V 4 2 0 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 200 150 TJ = 25°C 100 TJ = 150°C 50 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 5-2009 14 ISD, REVERSE DRAIN CURRENT (A) VGS, GATE-TO-SOURCE VOLTAGE (V) ID = 33A 0 0 Rev B 0 050-8089 0 APT45M100J 300 300 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 10 13µs 100µs 1ms Rds(on) 10ms 1 100ms 0.1 TJ = 125°C TC = 75°C 1 IDM 13µs 10 100µs 1ms Rds(on) TJ = 150°C TC = 25°C 1 10ms 100ms DC line Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 DC line 0.1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area C 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area D = 0.9 0.12 0.10 0.7 0.08 0.5 0.06 Note: PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 0.3 0.04 t1 t2 t1 = Pulse Duration 0.02 0 t 0.1 0.05 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1.0 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) Rev B 5-2009 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 050-8089 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.