isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE3055AT DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 80V(Min) ·High DC Current Gain: hFE= 150-260@IC= 1A ·Bandwidth Product: fT = 2MHz(Min)@IC = 500 mA APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 6 A PC Collector Power Dissipation @ TC=25℃ 75 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE3055AT ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5uA; IB= 0 100 V V(BR)EBO Emitter -Base Breakdown Voltage IE= 50uA; IB= 0 6 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A 8.0 V VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V 1.8 V ICEO Collector Cutoff Current VCE= 30V; IB= 0 0.7 mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 uA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 uA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 150 260 hFE-2 DC Current Gain IC= 4A ; VCE= 4V 20 100 hFE-3 DC Current Gain IC= 10A ; VCE= 4V 5 Second Breakdown Collector Current with Base Forward Biased VCE= 37V,t= 0.5s,Nonrepetitive 2.0 Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V; f= 500kHz 2.0 Is/b fT isc Website：www.iscsemi.com CONDITIONS 2 MIN TYP. MAX UNIT A MHz isc & iscsemi is registered trademark