MBR30H100MFS, NRVB30H100MFS Switch-mode Power Rectifiers These state−of−the−art devices have the following features: www.onsemi.com Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After • • • • • • Board Mounting Guardring for Stress Protection Low Forward Voltage Drop 175°C Operating Junction Temperature Wettable Flacks Option Available NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 100 VOLTS 5,6 1,2,3 MARKING DIAGRAM A 1 Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements SO−8 FLAT LEAD CASE 488AA STYLE 2 B30H10 A Y W ZZ A A C B30H10 AYWZZ C Not Used = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability Applications • • • • Output Rectification in Compact Portable Consumer Applications Freewheeling Diode used with Inductive Loads Telecom Power Conversion Automotive Freewheeling Diode ORDERING INFORMATION Device Package Shipping† MBR30H100MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel MBR30H100MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel NRVB30H100MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NRVB30H100MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 March, 2015 − Rev. 2 1 Publication Order Number: MBR30H100MFS/D MBR30H100MFS, NRVB30H100MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 Average Rectified Forward Current (Rated VR, TC = 140°C) IF(AV) 30 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 135°C) IFRM 60 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 300 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C EAS 100 mJ Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) V ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Typ Max Unit RθJC − 1.6 °C/W 0.58 0.71 0.66 0.81 0.72 0.76 0.86 0.90 5 0.005 15 0.1 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 15 A, TJ = 125°C) (iF = 15 A, TJ = 25°C) (iF = 30 A, TJ = 125°C) (iF = 30 A, TJ = 25°C) vF Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MBR30H100MFS, NRVB30H100MFS TYPICAL CHARACTERISTICS iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 175°C 10 TA = 150°C TA = 125°C 1 TA = 25°C TA = −40°C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TA = 25°C TA = −40°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E+00 TA = 175°C 1.E−01 1.E−02 1.E−03 1.E−03 TA = 150°C TA = 125°C 1.E−04 1.E−05 TA = 25°C 1.E−06 TA = 175°C 1.E−01 1.E−02 TA = 125°C 1.E−04 1.E−05 TA = 150°C TA = 25°C 1.E−06 1.E−07 1.E−07 1.E−08 1.E−09 1.E−08 1.E−09 1.E−10 1.E−10 TA = −40°C 1.E−11 1.E−12 0 10 20 TA = −40°C 1.E−11 1.E−12 30 40 50 60 70 80 90 100 0 10 30 20 40 50 60 70 80 90 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 10000 C, JUNCTION CAPACITANCE (pF) 1 1.0 1.E+00 TJ = 25°C 1000 100 10 0 TA = 150°C TA = 125°C IR, INSTANTANEOUS REVERSE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 0 TA = 175°C 10 0.1 10 20 30 40 50 60 70 80 90 100 IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 60 55 50 RqJC = 1.6°C/W dc 45 40 35 30 Square Wave 25 20 15 10 5 0 60 80 100 120 140 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating www.onsemi.com 3 160 MBR30H100MFS, NRVB30H100MFS TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 8 IPK/IAV = 20 TJ = 175°C IPK/IAV = 10 7 6 5 IPK/IAV = 5 4 3 Square Wave 2 1 dc 0 0 1 2 3 4 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation R(t) (°C/W) 100 50% Duty Cycle 20% 10 10% 5% 2% 1 1% 0.1 0.01 Assumes 25°C ambient and soldered to a 600 mm2 − oz copper pad on PCB Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 8. Thermal Characteristics www.onsemi.com 4 1 10 100 1000 MBR30H100MFS, NRVB30H100MFS PACKAGE DIMENSIONS DFN6 5x6, 1.27P (SO8 FL) CASE 488AA ISSUE H 2X 0.20 C D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A STYLE 2: PIN 1. ANODE 2. ANODE 3. ANODE 4. NO CONNECT 5. CATHODE 0.10 C SIDE VIEW 8X DETAIL A SOLDERING FOOTPRINT* b 0.10 C A B 0.05 c 3X 4X 1.270 0.750 4X 1.000 e/2 L 1 4 0.965 K 1.330 E2 PIN 5 (EXPOSED PAD) L1 2X 0.905 2X M 0.495 4.530 3.200 G MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.70 4.90 5.10 3.80 4.00 4.20 6.15 BSC 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ 0.475 D2 2X BOTTOM VIEW 1.530 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBR30H100MFS/D