AP04N60I-A-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
650V
RDS(ON)
2.5Ω
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
4
4A
S
Description
AP04N60 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
Rating
Units
650
V
+30
V
Drain Current, VGS @ 10V
4
4
A
Drain Current, VGS @ 10V
4
2.2
A
15
A
36.8
W
1.92
W
8
mJ
4
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
3
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data & specifications subject to change without notice
1
201501082
AP04N60I-A-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
650
-
-
V
VGS=10V, ID=2A
-
-
2.5
Ω
VGS=0V, ID=250uA
2
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
3.4
-
S
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=1A
-
19.5
31
nC
Qgs
Gate-Source Charge
VDS=480V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
8.5
-
nC
td(on)
Turn-on Delay Time
VDD=300V
-
21
-
ns
tr
Rise Time
ID=2A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=50Ω
-
105
-
ns
tf
Fall Time
VGS=10V
-
27
-
ns
Ciss
Input Capacitance
VGS=0V
-
740
1200
pF
Coss
Output Capacitance
VDS=25V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
10
-
pF
Min.
Typ.
IS=2A, VGS=0V
-
-
1.5
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=2A, VGS=0V
-
280
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
2.94
-
µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
o
3.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω
4.Ensure that the junction temperature does not exceed T Jmax..
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP04N60I-A-HF
8
5
o
o
T C =150 C
10V
8.0V
7.0V
6.0V
6
10V
8.0V
7.0V
6.0V
V G =5.0V
4
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 C
4
3
2
V G =5.0V
2
1
0
0
0
4
8
12
16
20
24
28
0
V DS , Drain-to-Source Voltage (V)
4
8
12
16
20
24
28
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I D =2A
V G =10V
1
.
Normalized RDS(ON)
Normalized BVDSS
1.1
2
1
0.9
0.8
0
-50
0
50
100
150
-50
o
0
50
100
150
o
T j , Junction Temperature ( C)
T j , Junction Temperature ( C )
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.6
8
1.4
Normalized VGS(th)
IS (A)
6
T j = 25 o C
o
T j = 150 C
4
1.2
1
0.8
2
0.6
0
0.4
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP04N60I-A-HF
12
f=1.0MHz
1200
1000
V DS =480V
8
800
C (pF)
VGS , Gate to Source Voltage (V)
I D =1A
10
6
C iss
600
4
400
2
200
0
0
0
4
8
12
16
20
24
C oss
C rss
1
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
Operation in this
area limited by
RDS(ON)
100us
1
1ms
10ms
100ms
1s
DC
0.1
o
T c =25 C
Single Pulse
.
Normalized Thermal Response (Rthjc)
100
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.01
1
10
100
1000
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) t
f
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP04N60I-A-HF
MARKING INFORMATION
Part Number
Option
A
04N60I
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5