MCH6320 Power MOSFET –12V, 70mΩ, –3.5A, Single P-Channel Features • 1.8V Drive • High Speed Switching • Pb-Free and RoHS Compliance Parameter Symbol ID Max −12V 115mΩ@ −2.5V −3.5A VDSS P-Channel Unit Value −12 V Gate to Source Voltage VGSS ±10 V Drain Current (DC) ID −3.5 A IDP −14 A PD 1.5 W 150 °C −55 to +150 °C PW≤10μs, duty cycle≤1% RDS(on) Max 70mΩ@ −4.5V Electrical Connection Absolute Maximum Ratings at Ta = 25°C Drain Current (Pulse) VDSS 215mΩ@ −1.8V Specifications Drain to Source Voltage www.onsemi.com 1, 2, 5, 6 3 Power Dissipation When mounted on ceramic substrate 4 (1200mm2 × 0.8mm) Junction Temperature Tj Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Packing Type : TL Symbol Value Unit Junction to Ambient When mounted on ceramic substrate (1200mm2 × 0.8mm) JU LOT No. Parameter Marking LOT No. Thermal Resistance Ratings 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain TL RθJA 83.3 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 3 1 Publication Order Number : MCH6320/D MCH6320 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value min typ max −12 Unit Drain to Source Breakdown Voltage V(BR)DSS ID=−1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=−12V, VGS=0V −10 μA Gate to Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA Gate Threshold Voltage VGS(th) VDS=−6V, ID=−1mA −0.4 −1.4 V Forward Transconductance gFS VDS=−6V, ID=−1.5A 2.7 RDS(on)1 ID=−1.5A, VGS=−4.5V RDS(on)2 ID=−0.8A, VGS=−2.5V 80 115 mΩ RDS(on)3 ID=−0.3A, VGS=−1.8V 125 215 mΩ 405 pF VDS=−6V, f=1MHz 145 pF Static Drain to Source On-State Resistance V 4.5 54 S 70 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time td(on) 8.8 ns Rise Time tr 80 ns Turn-OFF Delay Time td(off) 41 ns Fall Time tf 50 ns Total Gate Charge Qg 5.6 nC Gate to Source Charge Qgs 0.7 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD See specified Test Circuit VDS=−6V, VGS=−4.5V, ID=−3.5A 1.6 IS=−3.5A, VGS=0V −0.86 nC −1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --4.5V VDD= --6V VIN ID= --1.5A RL=4Ω VIN D PW=10μs D.C.≤1% VOUT G P.G MCH6320 50Ω S www.onsemi.com 2 MCH6320 www.onsemi.com 3 MCH6320 www.onsemi.com 4 MCH6320 Package Dimensions MCH6320-TL-E / MCH6320-TL-W MCPH6 CASE 419AS ISSUE O unit : mm 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device MCH6320-TL-E MCH6320-TL-W Package Shipping MCPH6 SC-88FL,SC-70-6,SOT-363 3,000 pcs. / Tape & Reel Note Pb-Free Pb-Free and Halogen Free † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH6320 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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