MITSUBISHI Nch POWER MOSFET FS1KM-16A HIGH-SPEED SWITCHING USE FS1KM-16A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡VDSS ................................................................................ 800V ¡rDS (ON) (MAX) .............................................................. 12.3Ω ¡ID ............................................................................................ 1A ¡Viso ................................................................................ 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage PD Tch Tstg Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Viso — Isolation voltage Weight Conditions VGS = 0V VDS = 0V AC for 1minute, Terminal to case Typical value Ratings Unit 800 ±30 1 3 V V A A 25 –55 ~ +150 –55 ~ +150 2000 W °C °C Vrms 2 g Feb.1999 MITSUBISHI Nch POWER MOSFET FS1KM-16A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 800V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 0.5A, VGS = 10V ID = 0.5A, VGS = 10V ID = 0.5A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 0.5A, VGS = 10V, RGEN = RGS = 50Ω IS = 0.5A, VGS = 0V Channel to case Thermal resistance Unit Min. Typ. Max. 800 ±30 — — — — — — ±10 V V µA — 2 — — — 3 9.43 4.72 1 4 12.3 6.15 mA V Ω V 0.6 — — — 1.0 270 26 4 — — — — S pF pF pF — — — — 9 12 35 30 — — — — ns ns ns ns — 1.0 1.5 V — — 5.0 °C/W PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 50 100 150 101 7 5 3 2 1ms 10ms 10–1 7 5 3 2 10–2 200 tw = 100ms 100 7 5 3 2 100ms TC = 25°C Single Pulse DC 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 2.0 PD = 25W DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 1.0 TC = 25°C Pulse Test 1.6 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 5V 1.2 0.8 4.5V 0.4 VGS = 20V 10V 5V TC = 25°C Pulse Test 0.8 0.6 4.5V 0.4 0.2 4V 4V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS1KM-16A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 30 ID = 2A 20 1A 10 0.5A 0 4 8 12 16 VGS = 10V 20V 12 8 4 0 10–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 20 TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 TC = 25°C VDS = 50V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) 1.2 0.8 0.4 VDS = 10V Pulse Test 3 TC = 25°C 2 100 7 5 75°C 125°C 3 2 0 4 8 12 16 10–1 –1 10 20 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 Ciss 102 7 5 3 2 Coss 101 7 5 3 Tch = 25°C 2 f = 1MHZ 100 16 DRAIN CURRENT ID (A) 1.6 0 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 2.0 DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) 40 0 CAPACITANCE Ciss, Coss, Crss (pF) 20 TC = 25°C Pulse Test Crss VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 50 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –1 10 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω td(off) tf tr td(on) 2 3 4 5 7 100 2 3 4 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS1KM-16A HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 250V 400V 600V 12 8 4 0 4 8 12 16 3 2 1 0 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 –50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (°C) 0.4 TC = 25°C 75°C 125°C GATE CHARGE Qg (nC) 101 7 5 10–1 VGS = 0V Pulse Test 4 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 5 Tch = 25°C ID = 1A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 D = 1.0 5 3 0.5 2 0.2 100 0.1 7 5 3 2 10–1 7 5 3 2 0.05 PDM 0.02 tw 0.01 T Single Pulse D= tw T 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999