Hittite HMC606LC5 Gaas ingap hbt mmic ultra low phase noise, distributed amplifier, 2 - 18 ghz Datasheet

HMC606LC5
v02.1207
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
LOW NOISE AMPLIFIERS - SMT
4
Typical Applications
Features
The HMC606LC5 is ideal for:
Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz
• Radar, EW & ECM
P1dB Output Power: +15 dBm
• Microwave Radio
Gain: 13.5 dB
• Test Instrumentation
Output IP3: +27 dBm
• Military & Space
Supply Voltage: +5V @ 64 mA
• Fiber Optic Systems
50 Ohm Matched Input/Output
32 Lead Ceramic 5x5mm SMT Package: 25mm2
Functional Diagram
General Description
The HMC606LC5 is a GaAs InGaP HBT MMIC
Distributed Amplifier housed in a leadless 5x5 mm
surface mount package which operates between 2
and 18 GHz. With an input signal of 12 GHz, the
amplifier provides ultra low phase noise performance
of -160 dBc/Hz at 10 kHz offset, representing a
significant improvement over FET-based distributed
amplifiers. The HMC606LC5 provides 13.5 dB of small
signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring
64 mA from a +5V supply. The HMC606LC5 amplifier
I/Os are internally matched to 50 Ohms and are
internally DC blocked.
Electrical Specifi cations, TA = +25° C, Vcc1= Vcc2= 5V
Parameter
Min.
Frequency Range
Gain
10.5
Gain Flatness
Gain Variation Over Temperature
Max.
Min.
13.5
9.5
Typ.
Max.
Units
2 - 18
GHz
12.5
dB
±1.0
±1.0
dB
0.021
0.024
dB/ °C
Noise Figure
5
7
dB
Input Return Loss
20
18
dB
Output Return Loss
15
15
dB
13
dBm
Output Power for 1 dB Compression (P1dB)
12
15
10
Saturated Output Power (Psat)
17
15
dBm
Output Third Order Intercept (IP3)
27
22
dBm
Phase Noise @ 100 Hz
-140
-140
dBc/Hz
Phase Noise @ 1 kHz
-150
-150
dBc/Hz
Phase Noise @ 10 kHz
-160
-160
dBc/Hz
Phase Noise @ 1 MHz
-170
-170
dBc/Hz
Supply Current
4 - 212
Typ.
2 - 12
64
95
64
95
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC606LC5
v02.1207
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
20
10
16
S21
S11
S22
0
-10
12
8
+25C
+85C
-40C
4
-30
0
0
2
4
6
8
10
12
14
16
18
20
22
2
4
6
FREQUENCY (GHz)
10
12
14
16
18
Output Return Loss vs. Temperature
0
0
-5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
Input Return Loss vs. Temperature
+25C
+85C
-40C
-10
8
FREQUENCY (GHz)
-15
-20
-25
+25C
+85C
-40C
-10
-15
LOW NOISE AMPLIFIERS - SMT
20
-20
-20
-25
-30
-30
2
4
6
8
10
12
14
16
18
2
4
6
FREQUENCY (GHz)
8
10
12
14
16
18
14
16
18
FREQUENCY (GHz)
Power Compression
Noise Figure vs. Temperature
14
20
12
15
NOISE FIGURE (dB)
Pout (dBm), Gain (dB), PAE (%)
4
Gain vs. Temperature
GAIN (dB)
RESPONSE (dB)
Gain & Return Loss
10
5
Output Power
Gain
PAE
0
-5
-15
+25C
+85C
-40C
10
8
6
4
2
0
-10
-5
0
Pin (dBm)
5
10
2
4
6
8
10
12
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4 - 213
HMC606LC5
v02.1207
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Psat vs. Temperature
20
25
16
21
Psat (dBm)
P1dB (dBm)
P1dB vs. Temperature
12
+25C
+85C
-40C
8
4
17
+25C
+85C
-40C
13
9
0
5
2
4
6
8
10
12
14
16
18
2
4
6
FREQUENCY (GHz)
30
-30
PHASE NOISE (dBc/Hz)
0
25
20
+25C
+85C
-40C
14
16
18
-60
-90
-150
5
2
4
6
8
10
12
14
16
18
-180
1
10
2
10
FREQUENCY (GHz)
4
10
5
10
5
10
10
6
Phase Noise at Psat @ 12 GHz
0
-30
-30
PHASE NOISE (dBc/Hz)
0
-60
-90
-120
-150
-180
1
10
3
10
FREQUENCY (Hz)
Phase Noise at P1dB @ 12 GHz
PHASE NOISE (dBc/Hz)
12
-120
10
-60
-90
-120
-150
2
10
3
10
4
10
FREQUENCY (Hz)
4 - 214
10
Phase Noise @ 12 GHz
35
15
8
FREQUENCY (GHz)
Output IP3 vs. Temperature
IP3 (dBm)
LOW NOISE AMPLIFIERS - SMT
4
5
10
6
10
-180
1
10
2
10
3
10
4
10
10
FREQUENCY (Hz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
6
HMC606LC5
v02.1207
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Typical Supply Current vs. Vcc1, Vcc2
Vcc1= Vcc2
7V
RF Input Power (RFIN)
+15 dBm
+4.5
53
Channel Temperature
175 °C
+5.0
64
Continuous Pdiss (T = 85 °C)
(derate 6 mW/°C above 85 °C)
0.55 W
+5.5
71
Thermal Resistance
(channel to ground paddle)
169.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Vcc1, Vcc2 (V)
Icc1 + Icc2 (mA)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
4
LOW NOISE AMPLIFIERS - SMT
Absolute Maximum Ratings
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4 - 215
HMC606LC5
v02.1207
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
LOW NOISE AMPLIFIERS - SMT
4
4 - 216
Pin Descriptions
Pin Number
Function
Description
1, 3, 7 - 15, 17
- 19,
23 - 32
N/C
No connection. These pins may be connected to RF
ground. Performance will not be affected.
2, 16
Vcc1, Vcc2
Power supply voltage for the amplifier.
4, 6, 20, 22,
Ground Paddle
GND
Ground paddle must be connected to RF/DC ground.
5
RFIN
This pin is AC coupled
and matched to 50 Ohms.
21
RFOUT
This pin is AC coupled
and matched to 50 Ohms.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC606LC5
v02.1207
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
4
LOW NOISE AMPLIFIERS - SMT
Evaluation PCB
List of Materials for Evaluation PCB 117156 [1]
Item
Description
J1 - J2
SRI K Connector
J3 - J4
2mm Molex Header
C1, C2
4.7 μF Capacitor, Tantalum
C3, C4
100 pF Capacitor, 0402 Pkg.
C5, C6
1000 pF Capacitor, 0603 Pkg.
U1
HMC606LC5
PCB [2]
117325 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4 - 217
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