HMC606LC5 v02.1207 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - SMT 4 Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm • Microwave Radio Gain: 13.5 dB • Test Instrumentation Output IP3: +27 dBm • Military & Space Supply Voltage: +5V @ 64 mA • Fiber Optic Systems 50 Ohm Matched Input/Output 32 Lead Ceramic 5x5mm SMT Package: 25mm2 Functional Diagram General Description The HMC606LC5 is a GaAs InGaP HBT MMIC Distributed Amplifier housed in a leadless 5x5 mm surface mount package which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606LC5 provides 13.5 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606LC5 amplifier I/Os are internally matched to 50 Ohms and are internally DC blocked. Electrical Specifi cations, TA = +25° C, Vcc1= Vcc2= 5V Parameter Min. Frequency Range Gain 10.5 Gain Flatness Gain Variation Over Temperature Max. Min. 13.5 9.5 Typ. Max. Units 2 - 18 GHz 12.5 dB ±1.0 ±1.0 dB 0.021 0.024 dB/ °C Noise Figure 5 7 dB Input Return Loss 20 18 dB Output Return Loss 15 15 dB 13 dBm Output Power for 1 dB Compression (P1dB) 12 15 10 Saturated Output Power (Psat) 17 15 dBm Output Third Order Intercept (IP3) 27 22 dBm Phase Noise @ 100 Hz -140 -140 dBc/Hz Phase Noise @ 1 kHz -150 -150 dBc/Hz Phase Noise @ 10 kHz -160 -160 dBc/Hz Phase Noise @ 1 MHz -170 -170 dBc/Hz Supply Current 4 - 212 Typ. 2 - 12 64 95 64 95 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC606LC5 v02.1207 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz 20 10 16 S21 S11 S22 0 -10 12 8 +25C +85C -40C 4 -30 0 0 2 4 6 8 10 12 14 16 18 20 22 2 4 6 FREQUENCY (GHz) 10 12 14 16 18 Output Return Loss vs. Temperature 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature +25C +85C -40C -10 8 FREQUENCY (GHz) -15 -20 -25 +25C +85C -40C -10 -15 LOW NOISE AMPLIFIERS - SMT 20 -20 -20 -25 -30 -30 2 4 6 8 10 12 14 16 18 2 4 6 FREQUENCY (GHz) 8 10 12 14 16 18 14 16 18 FREQUENCY (GHz) Power Compression Noise Figure vs. Temperature 14 20 12 15 NOISE FIGURE (dB) Pout (dBm), Gain (dB), PAE (%) 4 Gain vs. Temperature GAIN (dB) RESPONSE (dB) Gain & Return Loss 10 5 Output Power Gain PAE 0 -5 -15 +25C +85C -40C 10 8 6 4 2 0 -10 -5 0 Pin (dBm) 5 10 2 4 6 8 10 12 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 213 HMC606LC5 v02.1207 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Psat vs. Temperature 20 25 16 21 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 12 +25C +85C -40C 8 4 17 +25C +85C -40C 13 9 0 5 2 4 6 8 10 12 14 16 18 2 4 6 FREQUENCY (GHz) 30 -30 PHASE NOISE (dBc/Hz) 0 25 20 +25C +85C -40C 14 16 18 -60 -90 -150 5 2 4 6 8 10 12 14 16 18 -180 1 10 2 10 FREQUENCY (GHz) 4 10 5 10 5 10 10 6 Phase Noise at Psat @ 12 GHz 0 -30 -30 PHASE NOISE (dBc/Hz) 0 -60 -90 -120 -150 -180 1 10 3 10 FREQUENCY (Hz) Phase Noise at P1dB @ 12 GHz PHASE NOISE (dBc/Hz) 12 -120 10 -60 -90 -120 -150 2 10 3 10 4 10 FREQUENCY (Hz) 4 - 214 10 Phase Noise @ 12 GHz 35 15 8 FREQUENCY (GHz) Output IP3 vs. Temperature IP3 (dBm) LOW NOISE AMPLIFIERS - SMT 4 5 10 6 10 -180 1 10 2 10 3 10 4 10 10 FREQUENCY (Hz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 HMC606LC5 v02.1207 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Typical Supply Current vs. Vcc1, Vcc2 Vcc1= Vcc2 7V RF Input Power (RFIN) +15 dBm +4.5 53 Channel Temperature 175 °C +5.0 64 Continuous Pdiss (T = 85 °C) (derate 6 mW/°C above 85 °C) 0.55 W +5.5 71 Thermal Resistance (channel to ground paddle) 169.5 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Vcc1, Vcc2 (V) Icc1 + Icc2 (mA) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing 4 LOW NOISE AMPLIFIERS - SMT Absolute Maximum Ratings NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 215 HMC606LC5 v02.1207 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - SMT 4 4 - 216 Pin Descriptions Pin Number Function Description 1, 3, 7 - 15, 17 - 19, 23 - 32 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 2, 16 Vcc1, Vcc2 Power supply voltage for the amplifier. 4, 6, 20, 22, Ground Paddle GND Ground paddle must be connected to RF/DC ground. 5 RFIN This pin is AC coupled and matched to 50 Ohms. 21 RFOUT This pin is AC coupled and matched to 50 Ohms. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC606LC5 v02.1207 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz 4 LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 117156 [1] Item Description J1 - J2 SRI K Connector J3 - J4 2mm Molex Header C1, C2 4.7 μF Capacitor, Tantalum C3, C4 100 pF Capacitor, 0402 Pkg. C5, C6 1000 pF Capacitor, 0603 Pkg. U1 HMC606LC5 PCB [2] 117325 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 217