MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO MMBTA55 MMBTA56 Collector −Base Voltage 1 BASE Vdc −60 −80 VCBO 2 EMITTER Vdc −60 −80 MMBTA55 MMBTA56 3 Emitter −Base Voltage Collector Current − Continuous VEBO −4.0 Vdc IC −500 mAdc 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/°C RJA 556 °C/W PD 300 mW 2.4 mW/°C RJA 417 °C/W TJ, Tstg −55 to +150 °C 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. SOT−23 CASE 318 STYLE 6 MARKING DIAGRAMS 2H X 2GM X MMBTA55LT1 MMBTA56LT1 2H, 2GM = Specific Device Code X = Date Code ORDERING INFORMATION Package Shipping† MMBTA55LT1 SOT−23 3000/Tape & Reel MMBTA55LT3 SOT−23 10,000/Tape & Reel MMBTA56LT1 SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 10,000/Tape & Reel Device MMBTA56LT1G MMBTA56LT3 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 March, 2004 − Rev. 3 1 Publication Order Number: MMBTA55LT1/D MMBTA55LT1, MMBTA56LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit −60 −80 − − V(BR)EBO −4.0 − Vdc ICES − −0.1 Adc − − −0.1 −0.1 100 100 − − OFF CHARACTERISTICS V(BR)CEO Collector −Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) Vdc MMBTA55 MMBTA56 Emitter −Base Breakdown Voltage (IE = −100 Adc, IC = 0) Collector Cutoff Current (VCE = −60 Vdc, IB = 0) Collector Cutoff Current (VCB = −60 Vdc, IE = 0) (VCB = −80 Vdc, IE = 0) Adc ICBO MMBTA55 MMBTA56 ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −100 mAdc, IB = −10 mAdc) VCE(sat) − −0.25 Vdc Base −Emitter On Voltage (IC = −100 mAdc, VCE = −1.0 Vdc) VBE(on) − −1.2 Vdc fT 50 − MHz − SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 4) (IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz) 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN−ON TIME VCC −1.0 V 5.0 s 100 +40 V +40 V RL 100 OUTPUT +10 V tr = 3.0 ns RB Vin * CS 6.0 pF 5.0 F RL OUTPUT RB Vin 0 TURN−OFF TIME VCC +VBB * CS 6.0 pF 5.0 F 100 100 5.0 s tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) MMBTA55LT1, MMBTA56LT1 200 100 VCE = −2.0 V TJ = 25°C 50 C, CAPACITANCE (pF) 100 70 50 30 20 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 20 Cobo 10 5.0 −0.1 −0.2 −200 −0.5 −1.0 −2.0 −5.0 −10 −20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current−Gain — Bandwidth Product Figure 3. Capacitance −50 −100 400 TJ = 125°C VCE = −1.0 V h FE, DC CURRENT GAIN ts 200 100 70 50 tf VCC = −40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 −5.0 −7.0 −10 −20 −30 200 25°C −55°C 100 80 60 tr td @ VBE(off) = −0.5 V −50 −70 −100 −200 −300 40 −0.5 −1.0 −2.0 −500 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Switching Time Figure 5. DC Current Gain −1.0 TJ = 25°C −0.8 V, VOLTAGE (VOLTS) 20 30 IC, COLLECTOR CURRENT (mA) 300 30 Cibo 7.0 1.0 k 700 500 t, TIME (ns) TJ = 25°C 70 VBE(sat) @ IC/IB = 10 −0.6 VBE(on) @ VCE = −1.0 V −0.4 −0.2 VCE(sat) @ IC/IB = 10 0 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) Figure 6. “ON” Voltages http://onsemi.com 3 −500 −500 −1.0 R VB , TEMPERATURE COEFFICIENT (mV/° C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) MMBTA55LT1, MMBTA56LT1 TJ = 25°C −0.8 IC = −100 mA IC = −50 mA IC = −250 mA IC = −500 mA −0.6 −0.4 −0.2 IC = −10 mA 0 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −0.8 −1.2 −1.6 −2.0 RVB for VBE −2.4 −2.8 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Region Figure 8. Base−Emitter Temperature Coefficient http://onsemi.com 4 −500 MMBTA55LT1, MMBTA56LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AH A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. L 3 1 V B S 2 G DIM A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches SOT−23 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MMBTA55LT1, MMBTA56LT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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