, Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 DPAD SERIES MONOLITHIC DUAL PICO AMPERE DIODES FEATURES Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ACR<0.2pF ABSOLUTE MAXIMUM RATINGS1 DPAD DPAD1 TO-72 Top View TO-78 Top View Case & Substrate C2 x-"^^ A1 C2 @ 25°C (unless otherwise stated) Maximum Temperatures Storage Temperature -55°Cto+150°C Operating Junction Temperature -55°Cto+150°C Maximum Power Dissipation Continuous Power Dissipation (DPAD)3 500mW Maximum Currents 50mA Forward Current (DPAD) * Case and Pin 4 must be floating on all TO-78 case devices COMMON ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC BVR Reverse Breakdown Voltage VF Forward Voltage MIN. TYP. MAX. UNITS -45 -45 SSTDPAD5,50,100 -30 l R =-1uA 0.8 Differential Capacitance CRI- CR2\S DPAD1 DPAD2,5,10,20,50,100 (ACR) Total Reverse Capacitance CONDITIONS IF= 1mA 1.5 DPAD1 0.2 ALL OTHERS 0.5 DPAD1 0.8 DPAD2, 5,10, 20,50, 100 2.0 SSTDPAD5,50,100 4.0 PF VR = -5V, MMHz SPECIFIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL IR CHARACTERISTIC Maximum Reverse Leakage Current2 DPAD2 SSTDPAD2 (SST)DPADI -1 (SST)DPAD2 -2 (SST)DPADS -5 (SST)DPADIO -10 (SST)DPAD20 -20 (SST)DPAD50 -50 -50 (SST)DPADIOO -100 -100 Quality Semi-Conductors UNITS CONDITIONS -5 PA VR = -20V Figure 1. Operational Amplifier Protection Input Differential Voltage limited to 0.8V (typ) by DPADs DI and D2 Common Mode Input voltage limited by DPADs Ds and 04 to ±15V. Figure 2. Sample and Hold Circuit Typical Sample and Hold circuit with clipping. DPAD diodes reduce offset voltages fed capacitively from the JFET switch gate. FIGURE 2 FIGURE 1 +v +V -V DPAD10 D1 o- DPAD1 T D1 Y.D2 F i ein CONTROL, SIGNAL 2N4393 C i= +15V -15V TO-72 o " SOIC TO-78 Four Lead 0.335 0.014 0.018 0021 o.oso L5 0.189 0.196 ~l 0.150 Jl L. t_ 0.157 KL0.0075 0.0098 0.2284 0.2440 ^^ DIMENSIONS IN INCHES 0034 All dimensions in inches r 0.0040 0.0098