Fairchild H11B1M General purpose 6-pin photodarlington optocoupler portable electronic Datasheet

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
General Purpose 6-Pin Photodarlington Optocoupler
Features
Description
■ High sensitivity to low input drive current
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and
TIL113M have a gallium arsenide infrared emitter
optically coupled to a silicon planar photodarlington.
■ Meets or exceeds all JEDEC Registered
Specifications
■ UL, C-UL approved, File #E90700, Volume 2
■ IEC 60747-5-2 approved (ordering option V)
Applications
■ Low power logic circuits
■ Telecommunications equipment
■ Portable electronics
■ Solid state relays
■ Interfacing coupling systems of different potentials
and impedances
Schematic
ANODE 1
6 BASE
6
1
CATHODE 2
N/C 3
5 COLLECTOR
4 EMITTER
6
1
6
1
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
September 2009
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute
maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
-50 to +150
°C
TOTAL DEVICE
TSTG
Storage Temperature
TOPR
Operating Temperature
TSOL
Lead Solder Temperature (Wave)
PD
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
-40 to +100
°C
260 for 10 sec
°C
250
mW
3.3
mW/°C
EMITTER
IF
Continuous Forward Current
80
mA
VR
Reverse Voltage
3
V
Forward Current – Peak (300µs, 2% Duty Cycle)
3.0
A
LED Power Dissipation @ TA = 25°C
150
mW
2.0
mW/°C
IF(pk)
PD
Derate above 25°C
DETECTOR
BVCEO
Collector-Emitter Breakdown Voltage
30
V
BVCBO
Collector-Base Breakdown Voltage
30
V
BVECO
Emitter-Collector Breakdown Voltage
5
V
150
mW
2.0
mW/°C
150
mA
PD
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
IC
Continuous Collector Current
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
2
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Absolute Maximum Ratings (TA = 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
1.2
1.5
V
1.2
1.5
EMITTER
VF
Input Forward Voltage*
IF = 10mA
4NXXM
H11B1M,
TIL113M
IR
C
Reverse Leakage Current*
Capacitance*
0.8
VR = 3.0V
4NXXM
0.001
100
VR = 6.0V
H11B1M,
TIL113M
0.001
10
All
150
pF
60
V
VF = 0V, f = 1.0MHz
µA
DETECTOR
BVCEO
Collector-Emitter Breakdown Voltage* IC = 1.0mA, IB = 0
BVCBO
Collector-Base Breakdown Voltage*
BVECO
Emitter-Collector Breakdown Voltage* IE = 100µA, IB = 0
ICEO
Collector-Emitter Dark Current*
4NXXM,
TIL113M
IC = 100µA, IE = 0
VCE = 10V, Base Open
30
H11B1M
25
60
All
30
100
V
4NXXM
5.0
10
V
H11B1M,
TIL113M
7
10
All
1
100
nA
Max.
Unit
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
4N32M,
4N33M
50 (500)
4N29M,
4N30M
10 (100)
Typ.
DC CHARACTERISTICS
IC(CTR)
VCE(SAT)
Collector Output Current*(1, 2)
Saturation Voltage*(2)
IF = 10mA, VCE = 10V,
IB = 0
IF = 1mA, VCE = 5V
H11B1M
5 (500)
IF = 10mA, VCE = 1V
TIL113M
30 (300)
IF = 8mA, IC = 2.0mA
mA (%)
4NXXM
1.0
TIL113M
1.25
V
IF = 1mA, IC = 1mA
H11B1M
1.0
IF = 200mA, IC = 50mA,
VCC = 10V, RL = 100Ω
4NXXM,
TIL113M
5.0
µs
IF = 10mA, VCE = 10V,
RL = 100Ω
H11B1M
IF = 200mA, IC = 50mA,
VCC = 10V, RL = 100Ω
4N32M,
4N33M,
TIL113M
100
µs
4N29M,
4N30M
40
AC CHARACTERISTICS
ton
toff
Turn-on Time
Turn-off Time
IF = 10mA, VCE = 10V,
RL = 100Ω
BW
18
30
Bandwidth(3, 4)
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
H11B1M
25
kHz
www.fairchildsemi.com
3
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Isolation Characteristics
Symbol
VISO
RISO
CISO
Characteristic
Input-Output Isolation Voltage
Test Conditions
(5)
Isolation Resistance(5)
Isolation Capacitance
(5)
Device
Min.
f = 60Hz, t = 1 sec.
Typ.
Max.
Units
All
7500
VACPEAK
VDC
4N32M*
2500
V
VDC
4N33M*
1500
VI-O = 500VDC
All
1011
VI-O = Ø, f = 1MHz
All
Ω
0.8
pF
* Indicates JEDEC registered data.
Notes:
1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current.
2. Pulse test: pulse width = 300µs, duty cycle ≤ 2.0% .
3. IF adjusted to IC = 2.0mA and IC = 0.7mA rms.
4. The frequency at which IC is 3dB down from the 1kHz value.
5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
I-IV
For Rated Main voltage < 300Vrms
I-IV
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
CTI
Comparative Tracking Index
175
VPR
Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
1594
Vpeak
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
Vpeak
VIORM
Max. Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over Voltage
6000
Vpeak
External Creepage
7
mm
External Clearance
7
mm
Insulation Thickness
0.5
mm
Insulation Resistance at Ts, VIO = 500V
109
Ω
RIO
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
4
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Electrical Characteristics (TA = 25°C Unless otherwise specified.) (Continued)
Fig. 2 Normalized CTR vs. Forward Current
1.6
1.7
1.4
1.6
1.2
NORMALIZED CTR
VF - FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.5
1.4
TA = -55°C
1.3
TA = 25°C
VCE = 5.0V
TA = 25°C
Normalized to
IF = 10 mA
1.0
0.8
0.6
1.2
0.4
TA = 100°C
1.1
0.2
1.0
0.0
1
10
0
100
2
4
6
IF - LED FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
10
12
14
16
18
20
Fig. 4 CTR vs. RBE (Unsaturated)
1.4
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
1.0
1.2
IF = 5 mA
NORMALIZED CTR
8
IF - FORWARD CURRENT (mA)
1.0
IF = 10 mA
0.8
IF = 20 mA
0.6
Normalized to
IF = 10 mA
TA = 25°C
0.4
0.9
IF = 20 mA
0.8
IF = 10 mA
0.7
IF = 5 mA
0.6
0.5
0.4
0.3
0.2
VCE= 5.0 V
0.1
0.0
0.2
-60
-40
-20
0
20
40
60
80
100
10
100
TA - AMBIENT TEMPERATURE (°C)
Fig. 6 Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 5 CTR vs. RBE (Saturated)
100
1.0
0.9
VCE= 0.3 V
VCE (SAT) - COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
1000
RBE- BASE RESISTANCE (kΩ)
0.8
IF = 20 mA
0.7
0.6
IF = 10 mA
0.5
0.4
0.3
IF = 5 mA
0.2
TA = 25˚C
10
1
IF = 2.5 mA
0.1
IF = 20 mA
0.01
IF = 5 mA
0.1
0.001
0.01
0.0
10
100
1000
RBE- BASE RESISTANCE (k Ω)
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
IF = 10 mA
0.1
1
10
IC - COLLECTOR CURRENT (mA)
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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Typical Performance Curves
Fig. 7 Switching Speed vs. Load Resistor
Fig. 8 Normalized ton vs. RBE
1000
5.0
NORMALIZED ton - (ton(RBE) / ton(open))
SWITCHING SPEED - (µs)
IF = 10 mA
VCC = 10 V
TA = 25°C
100
Toff
10
Tf
Ton
1
Tr
0.1
0.1
4.5
VCC = 10 V
IC = 2 mA
RL = 100 Ω
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1
10
100
10
100
10000
100000
Fig. 10 Dark Current vs. Ambient Temperature
Fig. 9 Normalized toff vs. RBE
ICEO - COLLECTOR -EMITTER DARK CURRENT (nA)
1.4
1.3
NORMALIZED toff - (toff(RBE) / toff(open))
1000
RBE- BASE RESISTANCE (k Ω)
R-LOAD RESISTOR (kΩ)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VCC = 10 V
IC = 2 mA
RL = 100 Ω
0.5
0.4
0.3
0.2
10000
VCE = 10 V
TA = 25°C
1000
100
10
1
0.1
0.01
0.001
0.1
10
100
1000
10000
0
100000
20
RBE- BASE RESISTANCE (k Ω)
40
60
80
100
TA - AMBIENT TEMPERATURE (°C)
TEST CIRCUIT
WAVE FORMS
VCC = 10V
INPUT PULSE
IC
IF
INPUT
RL
10%
OUTPUT
OUTPUT PULSE
90%
RBE
tr
ton
tf
toff
Adjust IF to produce IC = 2 mA
Figure 11. Switching Time Test Circuit and Waveforms
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
6
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Typical Performance Curves (Continued)
Through Hole
0.4" Lead Spacing
8.13–8.89
6
4
8.13–8.89
6
4
1
3
6.10–6.60
6.10–6.60
Pin 1
1
3
Pin 1
5.08 (Max.)
0.25–0.36
7.62 (Typ.)
3.28–3.53
5.08 (Max.)
0.25–0.36
3.28–3.53
0.38 (Min.)
2.54–3.81
0.38 (Min.)
2.54–3.81
0.20–0.30
2.54 (Bsc)
(0.86)
15° (Typ.)
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.20–0.30
0.41–0.51
0.76–1.14
10.16–10.80
1.02–1.78
0.76–1.14
Surface Mount
(1.78)
8.13–8.89
6
4
(1.52)
(2.54)
(7.49)
6.10–6.60
8.43–9.90
(10.54)
1
3
(0.76)
Pin 1
Rcommended Pad Layout
0.25–0.36
3.28–3.53
5.08
(Max.)
0.38 (Min.)
0.20–0.30
2.54 (Bsc)
(0.86)
0.16–0.88
(8.13)
0.41–0.51
1.02–1.78
0.76–1.14
Note:
All dimensions in mm.
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
7
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Package Dimensions
Suffix
Example
Option
No Suffix
4N32M
S
4N32SM
SR2
4N32SR2M
T
4N32TM
0.4" Lead Spacing
V
4N32VM
VDE 0884
TV
4N32TVM
VDE 0884, 0.4" Lead Spacing
SV
4N32SVM
VDE 0884, Surface Mount
SR2V
4N32SR2VM
Standard Through Hole Device (50 units per tube)
Surface Mount Lead Bend
Surface Mount; Tape and Reel (1,000 units per reel)
VDE 0884, Surface Mount, Tape & Reel (1,000 units per reel)
Marking Information
1
V
3
4N29
2
X YY Q
6
5
4
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One digit year code, e.g., ‘7’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
8
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Ordering Information
12.0 ± 0.1
4.5 ± 0.20
2.0 ± 0.05
Ø1.5 MIN
4.0 ± 0.1
0.30 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
21.0 ± 0.1
9.1 ± 0.20
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
24.0 ± 0.3
User Direction of Feed
Note:
All dimensions are in millimeters.
Reflow Soldering Profile
300
280
260
240
220
200
180
160
°C 140
120
100
80
60
40
20
0
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
1.822°C/Sec Ramp up rate
33 Sec
0
60
120
180
270
360
Time (s)
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
9
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Tape Dimensions
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
®
®
Fairchild
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter®*
FPS™
F-PFS™
FRFET®
SM
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
®
OPTOPLANAR
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
*
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
10
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
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