IXYS IXFH58N20Q Hiperfet power mosfet Datasheet

HiPerFETTM
Power MOSFETs
IXFH 58N20Q
IXFT 58N20Q
VDSS
ID25
RDS(on)
Q-Class
= 200 V
=
58 A
=
40 mW
trr £ 200 ns
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Qg
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
200
200
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
58
A
IDM
TC = 25°C, pulse width limited by TJM
232
A
IAR
TC = 25°C
58
A
EAR
TC = 25°C
30
mJ
EAS
TC = 25°C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
TO-247
TO-268
W
°C
°C
°C
300
°C
1.13/10 Nm/lb.in.
6
4
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
g
g
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 1999 IXYS All rights reserved
300
-55 ... +150
150
-55 ... +150
200
2.0
TJ = 25°C
TJ = 125°C
V
4.0
V
±100
nA
25
1
µA
mA
40
mΩ
TO-268 (D3) (IXFT) Case Style
G
(TAB)
S
TO-247 AD
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l
l
l
l
l
l
IXYS advanced low Qg process
International standard packages
Low gate charge and capacitance
- easier to drive
- faster switching
Low RDS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l
l
l
Easy to mount
Space savings
High power density
98523A (5/99)
IXFH
IXFT
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
24
Ciss
34
pF
870
pF
Crss
280
pF
td(on)
20
ns
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
40
ns
td(off)
RG = 1.5 Ω (External)
40
ns
tf
13
ns
Qg(on)
98 140
nC
25
35
nC
45
70
nC
0.42
K/W
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
(TO-247)
Source-Drain Diode
0.25
Test Conditions
IS
VGS = 0 V
ISM
Repetitive;
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t rr
QRM
IRM
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IF = IS-di/dt = 100 A/µs, VR = 100 V
TO-247 AD Outline
S
3600
Coss
58N20Q
58N20Q
58
A
232
A
1.5
V
200
ns
µC
A
0.7
7
1
2
3
Terminals: 1 - Gate
3 - Source
Dim.
2 - Drain
Tab - Drain
Millimeter
Min.
Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min. Recommended Footprint
Dimensions in mm and inches
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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