Comchip CFRA105-G Smd fast recovery rectifier Datasheet

SMD Fast Recovery Rectifiers
CFRA101-G Thru. CFRA107-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 1.0 Amp
RoHS Device
Features
DO-214AC (SMA)
-Ideal for surface mount applications.
-Easy pick and place.
0.180(4.57)
0.160(4.06)
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.110(2.79)
0.086(2.18)
0.067(1.70)
0.051(1.29)
-Fast recovery time: 150~500nS.
-Low leakage current.
Mechanical data
0.209(5.31)
0.185(4.70)
-Case: JEDEC DO-214AC, molded plastic.
0.012(0.31)
0.006(0.15)
0.091(2.31)
0.067(1.70)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.008(0.20)
0.004(0.10)
0.059(1.50)
0.035(0.89)
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.063 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Symbol
CFRA
101-G
CFRA
102-G
CFRA
103-G
CFRA
104-G
CFRA
105-G
CFRA
106-G
CFRA
107-G
Units
Max. repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Max. DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Max. RMS voltage
VRMS
35
70
140
280
420
560
700
V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
30
A
Max. average forward current
IO
1.0
A
Max. instantaneous forward voltage at
1.0A
VF
1.3
V
Reverse recovery time
Trr
Parameter
Max. DC reverse current at TA=25
rated DC blocking voltage TA=125
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
O
C
C
O
150
250
500
nS
IR
5.0
200
RθJA
42
TJ
150
O
C
TSTG
-55 to +150
O
C
μA
O
C/W
2
2
Notes: 1. Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 0.2×0.2 inch(5.0×5.0 mm
)copper pad
area.
REV:A
Page 1
QW-BF001
Comchip Technology CO., LTD.
SMD Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CFRA101-G thru CFRA107-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
1000
100
O
TJ=125 C
10
F o r w a rd C u rren t(A)
Rever s e C urr e n t (μA )
100
10
1
1
0.1
TJ=25 OC
TJ=25 OC
Pulse width 300μS
4% duty cycle
0.1
0.01
0
20
40
60
80
100
120
0.4
140
0.8
1.2
2.0
1.6
2.4
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig.3 Junction Capacitance
Fig.4 Non-repetitive Forward Surge Current
35
50
O
J u n c ti o n C apacian
t ce(p F )
30
Peak F or ward Surge C ur re nt A
( )
TJ=25 OC
f=1MHz and applied
4VDC reverse voltage
25
20
15
10
5
TJ=25 C
8.3ms single half sine
wave, JEDEC method
40
30
20
10
0
0
0.01
0.1
1
10
100
1
10
100
Number of Cycles at 60Hz
Reverse Voltage (V)
Fig.6 Current Derating Curve
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
1.4
trr
10Ω
NONINDUCTIVE
Average Forward Current (A)
50Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
(-)
(-)
D.U.T.
1Ω
NONINDUCTIVE
PULSE
GENERATOR
(NOTE 2)
0
-0.25A
(+)
OSCILLLISCOPE
(NOTE 1)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
1.2
1.0
0.8
0.6
Single phase
Half wave 60Hz
0.4
0.2
0
0
1cm
Set time base for
50 / 10nS / cm
25
50
75
100
125
Ambient Temperature (
150
O
175
C)
REV:A
Page 2
QW-BF001
Comchip Technology CO., LTD.
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