JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC350 TRANSISTOR (PNP) TO—92 FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM: -0.1 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol Test 1.EMITTER 2. BASE 3. COLLECTOR 1 2 3 unless otherwise specified） conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μA ， IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA， IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-35V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 μA DC current gain hFE VCE=-5 V, IC= -2mA Collector-emitter saturation voltage VCEsat IC= -10mA, IB= -1mA -0.3 V Base-emitter saturation voltage VBEsat IC= -10mA, IB= -1mA -1 V Transition frequency fT VCE=-5 V,IC=-10mA, f=30MHz 40 125 450 MHz TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015