DMN3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary BVDSS Features and Benefits RDS(ON) max ID max Low RDS(ON) – ensures on state losses are minimized TC = +25°C Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) 5.0m @ VGS = 10V 60A 7.4m @ VGS = 4.5V 50A 30V Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ® Case: PowerDI 3333-8 (SWP) (Type UX) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 (SWP) (Type UX) D D D D D G G S S S Top View Pin1 S Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMN3009LFVW-7 DMN3009LFVW-13 Notes: Case PowerDI3333-8 (SWP) (Type UX) PowerDI3333-8 (SWP) (Type UX) Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. YYWW Marking Information SW1 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digit of Year (ex: 17 = 2017) WW = Week Code (01 to 53) SW1 PowerDI is a registered trademark of Diodes Incorporated. DMN3009LFVW Document number: DS39290 Rev. 1 - 2 1 of 7 www.diodes.com December 2017 © Diodes Incorporated DMN3009LFVW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TC = +25°C TC = +70°C Continuous Drain Current (Note 7) VGS = 10V ID Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 0.1mH (Note 8) Avalanche Energy, L = 0.1mH (Note 8) IDM IS ISM IAS EAS Value 30 ±20 60 48 90 60 90 33 58 Unit V V Value 1.0 126 2.0 62 4.6 -55 to +150 Unit W °C/W W A A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Steady State Steady State Symbol PD RJA PD RJA RJC TJ, TSTG °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) — 3.5 4.9 0.7 2.5 5.0 7.4 1.2 V Static Drain-Source On-Resistance 1 — — — mΩ VDS = VGS, ID = 250μA VGS = 10V, ID = 30A VGS = 4.5V, ID = 15A VGS = 0V, IS = 1A tD(ON) tR tD(OFF) tF tRR — — — — — — — — — — — — — 2,000 315 247 2.2 20 42 4.7 7.4 3.9 4.1 31 15 15 — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns QRR — 6.0 — nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd V Test Condition VDS = 15V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, ID = 15A VDD = 15V, VGS = 10V, RG = 3.3Ω, ID = 15A IF = 15A, di/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMN3009LFVW Document number: DS39290 Rev. 1 - 2 2 of 7 www.diodes.com December 2017 © Diodes Incorporated DMN3009LFVW 30 30.0 VGS=3.0V 25 VGS=4.5V VGS=2.5V ID, DRAIN CURRENT (A) 25.0 ID, DRAIN CURRENT (A) VDS=5V VGS=4.0V 20.0 15.0 VGS=10.0V 10.0 5.0 20 15 10 85℃ -55℃ 0 0 0.5 1 1.5 2 2.5 1 3 1.5 2 2.5 3 VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.005 0.0045 VGS=4.5V 0.004 0.0035 0.003 VGS=10V 0.0025 0.002 0 5 10 15 20 25 0.02 0.016 0.012 0.008 ID=15A 0.004 0 0 30 4 8 12 16 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 1.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.008 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 25℃ 125℃ 5 VGS=2.0V 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 150℃ VGS=4.5V 0.007 150℃ 0.006 125℃ 0.005 0.004 85℃ 0.003 25℃ 0.002 -55℃ 0.001 1.6 1.4 VGS=10V, ID=30A 1.2 VGS=4.5V, ID=15A 1 0.8 0.6 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMN3009LFVW Document number: DS39290 Rev. 1 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature December 2017 © Diodes Incorporated DMN3009LFVW 2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.008 0.007 0.006 VGS=4.5V, ID=15A 0.005 0.004 0.003 VGS=10V, ID=30A 0.002 0.001 1.7 ID=1mA 1.4 1.1 ID=250µA 0.8 0.5 0.2 0 -50 -25 0 25 50 75 100 125 -50 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 30 100000 VGS=0V IDSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) 25 20 15 10 TA=85℃ TA=150℃ 5 150℃ 1000 125℃ 100 85℃ 10 25℃ TA=25℃ TA=125℃ TA=-55℃ 0 0 10000 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 1 1.5 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakage Current vs. Voltage 10000 10 8 6 Ciss VGS (V) CT, JUNCTION CAPACITANCE (pF) f=1MHz 1000 4 VDS=15V, ID=15A Coss 2 Crss 0 100 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) 30 Document number: DS39290 Rev. 1 - 2 5 10 15 20 25 30 35 40 45 Qg (nC) Figure 12. Gate Charge Figure 11. Typical Junction Capacitance DMN3009LFVW 0 4 of 7 www.diodes.com December 2017 © Diodes Incorporated DMN3009LFVW 1000 RDS(ON) Limited PW =100µs ID, DRAIN CURRENT (A) 100 PW =1ms 10 PW =10ms 1 0.1 TJ(Max)=150℃ P =100ms W TC=25℃ PW =1s Single Pulse PW =10s DUT on 1*MRP Board VGS=10V DC 0.01 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 D=Single Pulse 0.001 0.0001 0.001 RθJA(t)=r(t) * RθJA RθJA=130℃/W Duty Cycle, D=t1/ t2 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 14. Transient Thermal Resistance DMN3009LFVW Document number: DS39290 Rev. 1 - 2 5 of 7 www.diodes.com December 2017 © Diodes Incorporated DMN3009LFVW Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (SWP) (Type UX) D A D1 E1 A1 E 0 c Detail A Detail A L E4 E3 E2 0.050 D2 k 0.150 PowerDI3333-8 (SWP) (Type UX) Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 -b 0.25 0.40 0.32 c 0.10 0.25 0.15 D 3.20 3.40 3.30 D1 2.95 3.15 3.05 D2 2.30 2.70 2.50 E 3.20 3.40 3.30 E1 2.95 3.15 3.05 E2 1.60 2.00 1.80 E3 0.95 1.35 1.15 E4 0.10 0.30 0.20 e 0.65 k 0.50 0.90 0.70 L 0.30 0.50 0.40 θ 0° 12° 10° All Dimensions in mm L e b Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (SWP) (Type UX) X3 X1 X2 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.600 X4 3.500 Y 0.700 Y1 0.550 Y2 1.650 Y3 0.600 Y4 2.450 Y5 0.400 Y6 3.700 Y1 Y2 Y4 Y5 Y6 X4 Y3 Y C DMN3009LFVW Document number: DS39290 Rev. 1 - 2 X 6 of 7 www.diodes.com December 2017 © Diodes Incorporated DMN3009LFVW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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