BCF 32, BFC 33 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.9 Dimensions / Maße in mm 1=B 2=E 3=C NPN SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BCF 32, BCF 33 Collector-Emitter-voltage B open VCE0 32 V Collector-Base-voltage E open VCB0 32 V Emitter-Base-voltage C open VEB0 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (DC) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 100 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 32 V ICB0 – – 100 nA IE = 0, VCB = 32 V, Tj = 100/C ICB0 – – 10 :A IEB0 – – 100 nA Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V 2 Collector saturation volt. – Kollektor-Sättigungsspg. ) 1 IC = 10 mA, IB = 0.5 mA VCEsat – 120 mV 250 mV IC = 100 mA, IB = 5 mA VCEsat – 210 mV – ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 20 01.11.2003 General Purpose Transistors BCF 32, BCF 33 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 1) IC = 10 mA, IB = 0.5 mA VBEsat – 750 mV – IC = 50 mA, IB = 2.5 mA VBEsat – 850 mV – DC current gain – Kollektor-Basis-Stromverhältnis 1) VCE = 5 V, IC = 10 :A VCE = 5 V, IC = 2 mA BCF 32 hFE – 150 – BCF 33 hFE – 270 – BCF 32 hFE 200 – 450 BCF 33 hFE 420 – 800 VBEon 550 mV – 700 mV fT 100 MHz – – CCB0 – 2.5 pF – F – 1.2 dB 4 dB Base-Emitter voltage – Basis-Emitter-Spannung 1) VCE = 5 V, IC = 2 mA Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 :A, RG = 2 kS, f = 1 kHz, )f = 200 Hz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking – Stempelung 420 K/W 2) BCF 29, BCF 30 BCF 32 = D7 BCF 33 = D8 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 21